DE3326958C2 - Integrierte Schaltung zum Verstärken - Google Patents

Integrierte Schaltung zum Verstärken

Info

Publication number
DE3326958C2
DE3326958C2 DE3326958A DE3326958A DE3326958C2 DE 3326958 C2 DE3326958 C2 DE 3326958C2 DE 3326958 A DE3326958 A DE 3326958A DE 3326958 A DE3326958 A DE 3326958A DE 3326958 C2 DE3326958 C2 DE 3326958C2
Authority
DE
Germany
Prior art keywords
zone
circuit according
semiconductor
capacitance
amplifier transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3326958A
Other languages
German (de)
English (en)
Other versions
DE3326958A1 (de
Inventor
Walter Beckenbach
Heinz 7100 Heilbronn Rinderle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Germany GmbH
Original Assignee
Telefunken Electronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH filed Critical Telefunken Electronic GmbH
Priority to DE3326958A priority Critical patent/DE3326958C2/de
Priority to US06/629,620 priority patent/US4617524A/en
Priority to JP59151481A priority patent/JPS6090406A/ja
Priority to KR1019840004477A priority patent/KR930002038B1/ko
Publication of DE3326958A1 publication Critical patent/DE3326958A1/de
Application granted granted Critical
Publication of DE3326958C2 publication Critical patent/DE3326958C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
DE3326958A 1983-07-27 1983-07-27 Integrierte Schaltung zum Verstärken Expired DE3326958C2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE3326958A DE3326958C2 (de) 1983-07-27 1983-07-27 Integrierte Schaltung zum Verstärken
US06/629,620 US4617524A (en) 1983-07-27 1984-07-11 Integrated amplifier circuit having RC network to suppress oscillation
JP59151481A JPS6090406A (ja) 1983-07-27 1984-07-23 増幅回路
KR1019840004477A KR930002038B1 (ko) 1983-07-27 1984-07-27 증폭기 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3326958A DE3326958C2 (de) 1983-07-27 1983-07-27 Integrierte Schaltung zum Verstärken

Publications (2)

Publication Number Publication Date
DE3326958A1 DE3326958A1 (de) 1985-02-14
DE3326958C2 true DE3326958C2 (de) 1986-07-10

Family

ID=6204972

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3326958A Expired DE3326958C2 (de) 1983-07-27 1983-07-27 Integrierte Schaltung zum Verstärken

Country Status (4)

Country Link
US (1) US4617524A (enExample)
JP (1) JPS6090406A (enExample)
KR (1) KR930002038B1 (enExample)
DE (1) DE3326958C2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3839241A1 (de) * 1988-11-21 1990-05-23 Telefunken Electronic Gmbh Verstaerkerschaltung mit einem verstaerkertransistor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862018A (en) * 1987-11-30 1989-08-29 Texas Instruments Incorporated Noise reduction for output drivers
GB2268348B (en) * 1992-06-30 1996-01-03 Texas Instruments Ltd Noise reduction circuit
DE19509295A1 (de) * 1995-03-15 1996-09-19 Telefunken Microelectron Verstärkerschaltung mit Transistor in Basis-Grundschaltung
DE19532990C1 (de) * 1995-09-07 1996-11-14 Telefunken Microelectron Integrierte Halbleiteranordnung mit einem NPN-Transistor in Basisschaltung
US6731174B2 (en) * 2002-09-12 2004-05-04 Motorola, Inc. Radio frequency power amplifier device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
DE1944688A1 (de) * 1969-09-03 1971-03-04 Licentia Gmbh Integrierte Halbleiteranordnung
US3860836A (en) * 1972-12-01 1975-01-14 Honeywell Inc Stabilization of emitter followers
US3953875A (en) * 1974-01-02 1976-04-27 Motorola, Inc. Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
FR2304179A1 (fr) * 1975-03-14 1976-10-08 Ibm Dispositif semi-conducteur bipolaire monte en emetteur-suiveur dont l'entree est stabilisee
DE2834402C2 (de) * 1978-08-05 1982-09-02 Philips Patentverwaltung Gmbh, 2000 Hamburg Monolithische, integrierte Halbleiteranordnung mit einer bipolaren Kapazität und Verwendung einer solchen Halbleiteranordnung
DE2927934A1 (de) * 1979-07-11 1981-01-15 Itt Ind Gmbh Deutsche Verwendung einer bipolaren transistorstruktur innerhalb integrierter schaltungen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3839241A1 (de) * 1988-11-21 1990-05-23 Telefunken Electronic Gmbh Verstaerkerschaltung mit einem verstaerkertransistor

Also Published As

Publication number Publication date
JPH0560685B2 (enExample) 1993-09-02
DE3326958A1 (de) 1985-02-14
KR930002038B1 (ko) 1993-03-22
JPS6090406A (ja) 1985-05-21
KR850001643A (ko) 1985-03-30
US4617524A (en) 1986-10-14

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 74072 HEILB

8327 Change in the person/name/address of the patent owner

Owner name: TEMIC SEMICONDUCTOR GMBH, 74072 HEILBRONN, DE

8327 Change in the person/name/address of the patent owner

Owner name: ATMEL GERMANY GMBH, 74072 HEILBRONN, DE