DE3318564A1 - Integrierte digitale mos-halbleiterschaltung - Google Patents

Integrierte digitale mos-halbleiterschaltung

Info

Publication number
DE3318564A1
DE3318564A1 DE19833318564 DE3318564A DE3318564A1 DE 3318564 A1 DE3318564 A1 DE 3318564A1 DE 19833318564 DE19833318564 DE 19833318564 DE 3318564 A DE3318564 A DE 3318564A DE 3318564 A1 DE3318564 A1 DE 3318564A1
Authority
DE
Germany
Prior art keywords
gate
transistor
output
input
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19833318564
Other languages
German (de)
English (en)
Inventor
Willibald Dipl.-Ing. Meyer
Jürgen Ing.(grad.) 8000 München Wawersig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19833318564 priority Critical patent/DE3318564A1/de
Priority to AT84105061T priority patent/ATE49078T1/de
Priority to DE8484105061T priority patent/DE3480887D1/de
Priority to EP84105061A priority patent/EP0127015B1/de
Priority to US06/610,092 priority patent/US4588907A/en
Priority to JP59099663A priority patent/JPS59231794A/ja
Publication of DE3318564A1 publication Critical patent/DE3318564A1/de
Priority to HK957/91A priority patent/HK95791A/xx
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31701—Arrangements for setting the Unit Under Test [UUT] in a test mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Logic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
DE19833318564 1983-05-20 1983-05-20 Integrierte digitale mos-halbleiterschaltung Withdrawn DE3318564A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE19833318564 DE3318564A1 (de) 1983-05-20 1983-05-20 Integrierte digitale mos-halbleiterschaltung
AT84105061T ATE49078T1 (de) 1983-05-20 1984-05-04 Integrierte digitale mos-halbleiterschaltung.
DE8484105061T DE3480887D1 (de) 1983-05-20 1984-05-04 Integrierte digitale mos-halbleiterschaltung.
EP84105061A EP0127015B1 (de) 1983-05-20 1984-05-04 Integrierte digitale MOS-Halbleiterschaltung
US06/610,092 US4588907A (en) 1983-05-20 1984-05-14 Integrated digital MOS semiconductor circuit
JP59099663A JPS59231794A (ja) 1983-05-20 1984-05-17 デジタルｍｏｓ半導体集積回路
HK957/91A HK95791A (en) 1983-05-20 1991-11-28 Integrated digital mos semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19833318564 DE3318564A1 (de) 1983-05-20 1983-05-20 Integrierte digitale mos-halbleiterschaltung

Publications (1)

Publication Number Publication Date
DE3318564A1 true DE3318564A1 (de) 1984-11-22

Family

ID=6199587

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19833318564 Withdrawn DE3318564A1 (de) 1983-05-20 1983-05-20 Integrierte digitale mos-halbleiterschaltung
DE8484105061T Expired - Lifetime DE3480887D1 (de) 1983-05-20 1984-05-04 Integrierte digitale mos-halbleiterschaltung.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8484105061T Expired - Lifetime DE3480887D1 (de) 1983-05-20 1984-05-04 Integrierte digitale mos-halbleiterschaltung.

Country Status (6)

Country Link
US (1) US4588907A (cg-RX-API-DMAC7.html)
EP (1) EP0127015B1 (cg-RX-API-DMAC7.html)
JP (1) JPS59231794A (cg-RX-API-DMAC7.html)
AT (1) ATE49078T1 (cg-RX-API-DMAC7.html)
DE (2) DE3318564A1 (cg-RX-API-DMAC7.html)
HK (1) HK95791A (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE51316T1 (de) * 1984-12-28 1990-04-15 Siemens Ag Integrierter halbleiterspeicher.
JPS61258399A (ja) * 1985-05-11 1986-11-15 Fujitsu Ltd 半導体集積回路装置
JPS6238599A (ja) * 1985-08-13 1987-02-19 Mitsubishi Electric Corp 半導体記憶装置
DE3681666D1 (de) * 1985-09-11 1991-10-31 Siemens Ag Integrierter halbleiterspeicher.
JPS62293598A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体記憶装置
JPS6337269A (ja) * 1986-08-01 1988-02-17 Fujitsu Ltd モ−ド選定回路
KR910001534B1 (ko) * 1986-09-08 1991-03-15 가부시키가이샤 도시바 반도체기억장치
US4716302A (en) * 1986-12-22 1987-12-29 Motorola, Inc. Identity circuit for an integrated circuit using a fuse and transistor enabled by a power-on reset signal
DE58903906D1 (de) * 1988-02-10 1993-05-06 Siemens Ag Redundanzdekoder eines integrierten halbleiterspeichers.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4071784A (en) * 1976-11-12 1978-01-31 Motorola, Inc. MOS input buffer with hysteresis
NL7704005A (nl) * 1977-04-13 1977-06-30 Philips Nv Geintegreerde schakeling.
US4350906A (en) * 1978-06-23 1982-09-21 Rca Corporation Circuit with dual-purpose terminal
US4318013A (en) * 1979-05-01 1982-03-02 Motorola, Inc. High voltage detection circuit
WO1982000930A1 (en) * 1980-09-10 1982-03-18 Plachno R Delay stage for a clock generator
DE3044689C2 (de) * 1980-11-27 1982-08-26 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Schaltung mit nichtflüchtig programmierbaren Halbleiterspeichern
US4446534A (en) * 1980-12-08 1984-05-01 National Semiconductor Corporation Programmable fuse circuit
US4480199A (en) * 1982-03-19 1984-10-30 Fairchild Camera & Instrument Corp. Identification of repaired integrated circuits

Also Published As

Publication number Publication date
JPH0454320B2 (cg-RX-API-DMAC7.html) 1992-08-31
US4588907A (en) 1986-05-13
HK95791A (en) 1991-12-06
EP0127015A3 (en) 1987-09-30
DE3480887D1 (de) 1990-02-01
JPS59231794A (ja) 1984-12-26
EP0127015A2 (de) 1984-12-05
ATE49078T1 (de) 1990-01-15
EP0127015B1 (de) 1989-12-27

Similar Documents

Publication Publication Date Title
DE2154024C3 (cg-RX-API-DMAC7.html)
DE3227464C2 (de) Programmierbare Schaltung
DE2300186C2 (de) MOS-Pufferschaltung und diese verwendendes MOS-Speichersystem
DE1816356A1 (de) Monolythischer Halbleiterspeicher
DE3714980C2 (cg-RX-API-DMAC7.html)
DE2332643C2 (de) Datenspeichervorrichtung
DE69221827T2 (de) Verfahren zum Programmieren einer anwenderprogrammierbaren Gattermatrix
DE3789726T2 (de) Register mit Einrichtungen zum gleichzeitigen Auslesen und Einschreiben über vielfache Anschlüsse.
EP0127015B1 (de) Integrierte digitale MOS-Halbleiterschaltung
EP0120458A2 (de) Integrierter dynamischer Schreib-Lesespeicher
EP0170727B1 (de) Integrierter Schreib-Lesespeicher
DE2442132C3 (de) Dynamisches Schieberegister und Verfahren zu seinem Betrieb
DE4117882A1 (de) Boosterschaltung fuer einen halbleiterspeicher
DE3430145C2 (de) Halbleiter-Speichereinrichtung
DE102005056278A1 (de) Flip-Flop-Vorrichtung und Verfahren zum Speichern und Ausgeben eines Datenwerts
DE2128792A1 (de) Schaltungsanordnung mit mindestens einem Feldeffekttransistor
DE2609714A1 (de) Speicherzellenanordnung
DE2131939C3 (de) Logisch gesteuerte Inverterstufe
DE68927255T2 (de) Impulsgeneratorschaltung
EP0020928B1 (de) Elektrische Speicheranordnung und Verfahren zu ihrem Betrieb
EP0254980B1 (de) Integrierbare Bewerterschaltung
DE2618760A1 (de) Halbleiter-speichervorrichtung
DE10038665C1 (de) Schaltungsanordnung zum Deaktivieren von Wortleitungen einer Speichermatrix
DE3634332C2 (cg-RX-API-DMAC7.html)
DE2459023C3 (de) Integrierbare, aus Isolierschicht-Feldeffekttransistoren gleicher Leitungsund Steuerungsart aufgebaute statische Schreib/Lesespeicherzelle

Legal Events

Date Code Title Description
8130 Withdrawal