DE3306974A1 - Halbleiter-bauelement - Google Patents
Halbleiter-bauelementInfo
- Publication number
- DE3306974A1 DE3306974A1 DE19833306974 DE3306974A DE3306974A1 DE 3306974 A1 DE3306974 A1 DE 3306974A1 DE 19833306974 DE19833306974 DE 19833306974 DE 3306974 A DE3306974 A DE 3306974A DE 3306974 A1 DE3306974 A1 DE 3306974A1
- Authority
- DE
- Germany
- Prior art keywords
- diode
- horizontal deflection
- platinum
- film
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 48
- 229910052697 platinum Inorganic materials 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 239000008188 pellet Substances 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 12
- 239000002800 charge carrier Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 235000010603 pastilles Nutrition 0.000 description 4
- 239000007937 lozenge Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57032366A JPS58151069A (ja) | 1982-03-03 | 1982-03-03 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3306974A1 true DE3306974A1 (de) | 1983-09-15 |
| DE3306974C2 DE3306974C2 (enrdf_load_stackoverflow) | 1989-10-26 |
Family
ID=12356945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833306974 Granted DE3306974A1 (de) | 1982-03-03 | 1983-02-28 | Halbleiter-bauelement |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS58151069A (enrdf_load_stackoverflow) |
| DE (1) | DE3306974A1 (enrdf_load_stackoverflow) |
| ES (1) | ES520236A0 (enrdf_load_stackoverflow) |
| GB (1) | GB2133212B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0140276A1 (en) * | 1983-10-17 | 1985-05-08 | Kabushiki Kaisha Toshiba | Power MOS FET and method of manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0675527B1 (en) * | 1994-03-30 | 1999-11-10 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Manufacturing process for obtaining bipolar transistors with controlled storage time |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2516620A1 (de) * | 1974-04-16 | 1975-10-30 | Thomson Csf | Pin-diode |
| DE3231676A1 (de) * | 1981-08-31 | 1983-03-17 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verlustarme pin-diode |
-
1982
- 1982-03-03 JP JP57032366A patent/JPS58151069A/ja active Pending
-
1983
- 1983-02-23 GB GB08304998A patent/GB2133212B/en not_active Expired
- 1983-02-28 DE DE19833306974 patent/DE3306974A1/de active Granted
- 1983-03-02 ES ES520236A patent/ES520236A0/es active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2516620A1 (de) * | 1974-04-16 | 1975-10-30 | Thomson Csf | Pin-diode |
| DE3231676A1 (de) * | 1981-08-31 | 1983-03-17 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verlustarme pin-diode |
Non-Patent Citations (1)
| Title |
|---|
| Reports of National Congress of the Institute of Electrical Engineers of Japan, 1975, Nr. 460, p. 563-564 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0140276A1 (en) * | 1983-10-17 | 1985-05-08 | Kabushiki Kaisha Toshiba | Power MOS FET and method of manufacturing the same |
| US4777149A (en) * | 1983-10-17 | 1988-10-11 | Kabushiki Kaisha Toshiba | Method of manufacturing power MOSFET |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58151069A (ja) | 1983-09-08 |
| GB2133212A (en) | 1984-07-18 |
| GB2133212B (en) | 1985-09-04 |
| DE3306974C2 (enrdf_load_stackoverflow) | 1989-10-26 |
| ES8403244A1 (es) | 1984-03-01 |
| ES520236A0 (es) | 1984-03-01 |
| GB8304998D0 (en) | 1983-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |