GB2133212B - Pin diode - Google Patents
Pin diodeInfo
- Publication number
- GB2133212B GB2133212B GB08304998A GB8304998A GB2133212B GB 2133212 B GB2133212 B GB 2133212B GB 08304998 A GB08304998 A GB 08304998A GB 8304998 A GB8304998 A GB 8304998A GB 2133212 B GB2133212 B GB 2133212B
- Authority
- GB
- United Kingdom
- Prior art keywords
- pin diode
- diode
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57032366A JPS58151069A (en) | 1982-03-03 | 1982-03-03 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8304998D0 GB8304998D0 (en) | 1983-03-30 |
GB2133212A GB2133212A (en) | 1984-07-18 |
GB2133212B true GB2133212B (en) | 1985-09-04 |
Family
ID=12356945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08304998A Expired GB2133212B (en) | 1982-03-03 | 1983-02-23 | Pin diode |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS58151069A (en) |
DE (1) | DE3306974A1 (en) |
ES (1) | ES8403244A1 (en) |
GB (1) | GB2133212B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6084881A (en) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | High-power mos fet and manufacture thereof |
EP0675527B1 (en) * | 1994-03-30 | 1999-11-10 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Manufacturing process for obtaining bipolar transistors with controlled storage time |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2268355B1 (en) * | 1974-04-16 | 1978-01-20 | Thomson Csf | |
JPS5839070A (en) * | 1981-08-31 | 1983-03-07 | Toshiba Corp | Semiconductor device |
-
1982
- 1982-03-03 JP JP57032366A patent/JPS58151069A/en active Pending
-
1983
- 1983-02-23 GB GB08304998A patent/GB2133212B/en not_active Expired
- 1983-02-28 DE DE19833306974 patent/DE3306974A1/en active Granted
- 1983-03-02 ES ES520236A patent/ES8403244A1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3306974C2 (en) | 1989-10-26 |
GB8304998D0 (en) | 1983-03-30 |
ES520236A0 (en) | 1984-03-01 |
GB2133212A (en) | 1984-07-18 |
JPS58151069A (en) | 1983-09-08 |
ES8403244A1 (en) | 1984-03-01 |
DE3306974A1 (en) | 1983-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19950223 |