GB2133212B - Pin diode - Google Patents

Pin diode

Info

Publication number
GB2133212B
GB2133212B GB08304998A GB8304998A GB2133212B GB 2133212 B GB2133212 B GB 2133212B GB 08304998 A GB08304998 A GB 08304998A GB 8304998 A GB8304998 A GB 8304998A GB 2133212 B GB2133212 B GB 2133212B
Authority
GB
United Kingdom
Prior art keywords
pin diode
diode
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08304998A
Other versions
GB8304998D0 (en
GB2133212A (en
Inventor
Hirotoshi Toita
Kenzo Shima
Kensuke Suzuki
Mitsuyuki Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8304998D0 publication Critical patent/GB8304998D0/en
Publication of GB2133212A publication Critical patent/GB2133212A/en
Application granted granted Critical
Publication of GB2133212B publication Critical patent/GB2133212B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
GB08304998A 1982-03-03 1983-02-23 Pin diode Expired GB2133212B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57032366A JPS58151069A (en) 1982-03-03 1982-03-03 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8304998D0 GB8304998D0 (en) 1983-03-30
GB2133212A GB2133212A (en) 1984-07-18
GB2133212B true GB2133212B (en) 1985-09-04

Family

ID=12356945

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08304998A Expired GB2133212B (en) 1982-03-03 1983-02-23 Pin diode

Country Status (4)

Country Link
JP (1) JPS58151069A (en)
DE (1) DE3306974A1 (en)
ES (1) ES520236A0 (en)
GB (1) GB2133212B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6084881A (en) * 1983-10-17 1985-05-14 Toshiba Corp High-power mos fet and manufacture thereof
EP0675527B1 (en) * 1994-03-30 1999-11-10 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Manufacturing process for obtaining bipolar transistors with controlled storage time

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268355B1 (en) * 1974-04-16 1978-01-20 Thomson Csf
JPS5839070A (en) * 1981-08-31 1983-03-07 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
ES8403244A1 (en) 1984-03-01
ES520236A0 (en) 1984-03-01
DE3306974C2 (en) 1989-10-26
JPS58151069A (en) 1983-09-08
GB8304998D0 (en) 1983-03-30
DE3306974A1 (en) 1983-09-15
GB2133212A (en) 1984-07-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950223