DE3305977A1 - Verfahren zur schnellen indirekten bestimmung von fotolacklinienbreiten bei der optischen projektionsbe lichtung - Google Patents

Verfahren zur schnellen indirekten bestimmung von fotolacklinienbreiten bei der optischen projektionsbe lichtung

Info

Publication number
DE3305977A1
DE3305977A1 DE19833305977 DE3305977A DE3305977A1 DE 3305977 A1 DE3305977 A1 DE 3305977A1 DE 19833305977 DE19833305977 DE 19833305977 DE 3305977 A DE3305977 A DE 3305977A DE 3305977 A1 DE3305977 A1 DE 3305977A1
Authority
DE
Germany
Prior art keywords
exposure
structures
photoresist
test structure
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833305977
Other languages
German (de)
English (en)
Other versions
DE3305977C2 (enExample
Inventor
Wolfgang Dr. 8206 Bruckmühl Arden
Dietrich Dr. 8025 Unterhaching Widmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19833305977 priority Critical patent/DE3305977A1/de
Publication of DE3305977A1 publication Critical patent/DE3305977A1/de
Application granted granted Critical
Publication of DE3305977C2 publication Critical patent/DE3305977C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE19833305977 1983-02-21 1983-02-21 Verfahren zur schnellen indirekten bestimmung von fotolacklinienbreiten bei der optischen projektionsbe lichtung Granted DE3305977A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19833305977 DE3305977A1 (de) 1983-02-21 1983-02-21 Verfahren zur schnellen indirekten bestimmung von fotolacklinienbreiten bei der optischen projektionsbe lichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19833305977 DE3305977A1 (de) 1983-02-21 1983-02-21 Verfahren zur schnellen indirekten bestimmung von fotolacklinienbreiten bei der optischen projektionsbe lichtung

Publications (2)

Publication Number Publication Date
DE3305977A1 true DE3305977A1 (de) 1984-08-23
DE3305977C2 DE3305977C2 (enExample) 1987-06-04

Family

ID=6191413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833305977 Granted DE3305977A1 (de) 1983-02-21 1983-02-21 Verfahren zur schnellen indirekten bestimmung von fotolacklinienbreiten bei der optischen projektionsbe lichtung

Country Status (1)

Country Link
DE (1) DE3305977A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0217463A1 (en) * 1985-09-26 1987-04-08 Koninklijke Philips Electronics N.V. Method of determining an exposure dose of a photosensitive lacquer layer
DE3727030A1 (de) * 1987-08-13 1989-02-23 Siemens Ag Verfahren zur indirekten bestimmung von strukturbreiten und strukturbreitenabweichungen von lithographiemasken
EP0342881A1 (en) * 1988-05-17 1989-11-23 BRITISH TELECOMMUNICATIONS public limited company Linewidth loss measurement
EP0585839A3 (en) * 1992-08-31 1994-06-08 Texas Instruments Inc Process control for submicron linewidth measurement
EP0595020A3 (en) * 1992-09-21 1995-08-09 Texas Instruments Inc Process control for submicron line width measurement.

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100346448B1 (ko) * 1994-12-29 2002-11-23 주식회사 하이닉스반도체 반도체소자용노광마스크

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303341A (en) * 1977-12-19 1981-12-01 Rca Corporation Optically testing the lateral dimensions of a pattern
US4330213A (en) * 1980-02-14 1982-05-18 Rca Corporation Optical line width measuring apparatus and method
DE3224462A1 (de) * 1981-06-30 1983-01-13 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum bewerten der massgenauigkeit eines auf einem substrat ausgebildeten musters und photomaske hierfuer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303341A (en) * 1977-12-19 1981-12-01 Rca Corporation Optically testing the lateral dimensions of a pattern
US4330213A (en) * 1980-02-14 1982-05-18 Rca Corporation Optical line width measuring apparatus and method
DE3224462A1 (de) * 1981-06-30 1983-01-13 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum bewerten der massgenauigkeit eines auf einem substrat ausgebildeten musters und photomaske hierfuer

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Photolithographic Linewidth Control, IEEE Trans. E. D., Vol. ED-22, No. 7, July 75, S. 471-477 *
US-Z *
US-Z: A Double-Exposure Technique to Macroscopically Control Submicrometer Linewidths in Positive Resist Images, IEEE Trans. E. D., Vol. ED-25, No. 4, Aug. 78, S. 419-424 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0217463A1 (en) * 1985-09-26 1987-04-08 Koninklijke Philips Electronics N.V. Method of determining an exposure dose of a photosensitive lacquer layer
DE3727030A1 (de) * 1987-08-13 1989-02-23 Siemens Ag Verfahren zur indirekten bestimmung von strukturbreiten und strukturbreitenabweichungen von lithographiemasken
EP0342881A1 (en) * 1988-05-17 1989-11-23 BRITISH TELECOMMUNICATIONS public limited company Linewidth loss measurement
US4963924A (en) * 1988-05-17 1990-10-16 British Telecommunications Plc Linewidth loss measurement
EP0585839A3 (en) * 1992-08-31 1994-06-08 Texas Instruments Inc Process control for submicron linewidth measurement
US5361137A (en) * 1992-08-31 1994-11-01 Texas Instruments Incorporated Process control for submicron linewidth measurement
EP0595020A3 (en) * 1992-09-21 1995-08-09 Texas Instruments Inc Process control for submicron line width measurement.

Also Published As

Publication number Publication date
DE3305977C2 (enExample) 1987-06-04

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee