DE3276556D1 - Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device - Google Patents

Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device

Info

Publication number
DE3276556D1
DE3276556D1 DE8282107381T DE3276556T DE3276556D1 DE 3276556 D1 DE3276556 D1 DE 3276556D1 DE 8282107381 T DE8282107381 T DE 8282107381T DE 3276556 T DE3276556 T DE 3276556T DE 3276556 D1 DE3276556 D1 DE 3276556D1
Authority
DE
Germany
Prior art keywords
semiconductor device
electrodes
fabricating
semiconductor
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282107381T
Other languages
German (de)
English (en)
Inventor
Michio Ooue
Yoko Wakui
Hiroaki Hachino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3276556D1 publication Critical patent/DE3276556D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
DE8282107381T 1981-09-02 1982-08-13 Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device Expired DE3276556D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56137011A JPS5839047A (ja) 1981-09-02 1981-09-02 半導体装置およびその製法

Publications (1)

Publication Number Publication Date
DE3276556D1 true DE3276556D1 (en) 1987-07-16

Family

ID=15188722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282107381T Expired DE3276556D1 (en) 1981-09-02 1982-08-13 Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device

Country Status (4)

Country Link
US (1) US4651191A (enExample)
EP (1) EP0073383B1 (enExample)
JP (1) JPS5839047A (enExample)
DE (1) DE3276556D1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3523808C3 (de) 1984-07-03 1995-05-04 Hitachi Ltd Verfahren zum Löten von Teilen einer elektronischen Anordnung aus unterschiedlichen Werkstoffen und dessen Verwendung
US4786962A (en) * 1986-06-06 1988-11-22 Hewlett-Packard Company Process for fabricating multilevel metal integrated circuits and structures produced thereby
EP0266093B1 (en) * 1986-10-27 1992-09-23 Electric Power Research Institute, Inc Process of making a high power multi-layer semiconductive switching device with multiple parallel contacts
EP0347238B1 (en) * 1988-06-17 1993-10-20 Ngk Insulators, Ltd. Minutely patterned structure, and method of producing the same
US4935627A (en) * 1989-03-13 1990-06-19 Honeywell Inc. Electrical interconnection apparatus for achieving precise alignment of hybrid components
US5266522A (en) * 1991-04-10 1993-11-30 International Business Machines Corporation Structure and method for corrosion and stress-resistant interconnecting metallurgy
US5175609A (en) * 1991-04-10 1992-12-29 International Business Machines Corporation Structure and method for corrosion and stress-resistant interconnecting metallurgy
JPH0547812A (ja) * 1991-08-19 1993-02-26 Mitsubishi Electric Corp 半導体装置
JP3141364B2 (ja) * 1992-05-06 2001-03-05 住友電気工業株式会社 半導体チップ
JP3054021B2 (ja) * 1993-12-27 2000-06-19 株式会社東芝 化合物半導体装置
US6117694A (en) * 1994-07-07 2000-09-12 Tessera, Inc. Flexible lead structures and methods of making same
US6828668B2 (en) * 1994-07-07 2004-12-07 Tessera, Inc. Flexible lead structures and methods of making same
US6361959B1 (en) 1994-07-07 2002-03-26 Tessera, Inc. Microelectronic unit forming methods and materials
FI98899C (fi) * 1994-10-28 1997-09-10 Jorma Kalevi Kivilahti Menetelmä elektroniikan komponenttien liittämiseksi juottamalla
DE19524739A1 (de) * 1994-11-17 1996-05-23 Fraunhofer Ges Forschung Kernmetall-Lothöcker für die Flip-Chip-Technik
US5763941A (en) * 1995-10-24 1998-06-09 Tessera, Inc. Connection component with releasable leads
US6261863B1 (en) 1995-10-24 2001-07-17 Tessera, Inc. Components with releasable leads and methods of making releasable leads
US6025649A (en) 1997-07-22 2000-02-15 International Business Machines Corporation Pb-In-Sn tall C-4 for fatigue enhancement
WO2000057472A1 (de) * 1999-03-24 2000-09-28 Infineon Technologies Ag Verfahren zum verbinden eines anschlussdrahtes mit einem anschlusskontakt eines integrierten schaltkreises
JP4293500B2 (ja) * 2001-05-07 2009-07-08 第一電子工業株式会社 電子部品の製造方法
JP2003303842A (ja) * 2002-04-12 2003-10-24 Nec Electronics Corp 半導体装置およびその製造方法
KR100568496B1 (ko) * 2004-10-21 2006-04-07 삼성전자주식회사 주석-인듐 합금층을 갖는 필름 회로 기판
WO2009133625A1 (ja) * 2008-05-02 2009-11-05 富士通株式会社 配線基板およびその製造方法、電子装置の製造方法
US11088308B2 (en) * 2019-02-25 2021-08-10 Tdk Corporation Junction structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401055A (en) * 1964-12-31 1968-09-10 Ibm Vapor depositing solder
US3436818A (en) * 1965-12-13 1969-04-08 Ibm Method of fabricating a bonded joint
US3839727A (en) * 1973-06-25 1974-10-01 Ibm Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound
CA1122856A (en) * 1978-09-20 1982-05-04 Nicholas G. Koopman Process for in-situ modification of solder composition

Also Published As

Publication number Publication date
JPH0136254B2 (enExample) 1989-07-31
EP0073383A3 (en) 1984-08-08
JPS5839047A (ja) 1983-03-07
EP0073383A2 (en) 1983-03-09
US4651191A (en) 1987-03-17
EP0073383B1 (en) 1987-06-10

Similar Documents

Publication Publication Date Title
DE3276556D1 (en) Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device
DE3270703D1 (en) Field effect semiconductor device and method of manufacturing such a device
DE3470253D1 (en) Method of manufacturing a semiconductor device having small dimensions
DE3473384D1 (en) Semiconductor device and a method of manufacturing the same
GB2106327B (en) Lead connection to hybrid integrated circuit devices and method of applying the same
DE3271995D1 (en) Method of manufacturing a semiconductor device
DE3378869D1 (en) A method of forming electrodes and wiring strips on a semiconductor device
GB2135509B (en) A semiconductor device having a pressure sensor and a method of manufacturing such a device
DE3275885D1 (en) Method of fabricating a mos device on a substrate
GB2104723B (en) Semiconductor substrate and method of manufacturing the same
GB2159326B (en) A semiconductor integrated circuit device and method of production thereof
JPS56108254A (en) Semiconductor circuit element and method of manufacturing same
DE3471405D1 (en) A method of producing a semiconductor structure on a substrate and a semiconductor device manufactured thereby
DE3173587D1 (en) A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
DE3170633D1 (en) Method of manufacturing a semiconductor device with an interconnection electrode layer
DE3264580D1 (en) Semiconductor device and method of manufacturing the same
EP0160965A3 (en) Method of manufacturing a semiconductor device with a stacked-gate-electrode structure
DE3278146D1 (en) Multilayer electrode of a semiconductor device
EP0167391A3 (en) Method of manufacturing semiconductor devices
DE3380104D1 (en) Substrate structure of semiconductor device and method of manufacturing the same
DE3468585D1 (en) Semiconductor device and a method of manufacturing the same
GB2022316B (en) Method of fabricating a semiconductor device by bonding together a silicon substrate and electrodes with aluminium
DE3278896D1 (en) Method for connecting a semiconductor chip to a substrate and such connection
MY8700644A (en) Semiconductor integrated circuit devices and method of manufacturing the same
JPS57196549A (en) Method of assembling semiconductor device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee