DE3270093D1 - A dry etching apparatus - Google Patents
A dry etching apparatusInfo
- Publication number
- DE3270093D1 DE3270093D1 DE8282303563T DE3270093T DE3270093D1 DE 3270093 D1 DE3270093 D1 DE 3270093D1 DE 8282303563 T DE8282303563 T DE 8282303563T DE 3270093 T DE3270093 T DE 3270093T DE 3270093 D1 DE3270093 D1 DE 3270093D1
- Authority
- DE
- Germany
- Prior art keywords
- dry etching
- etching apparatus
- dry
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56110904A JPS5816078A (ja) | 1981-07-17 | 1981-07-17 | プラズマエツチング装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3270093D1 true DE3270093D1 (en) | 1986-04-30 |
Family
ID=14547607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282303563T Expired DE3270093D1 (en) | 1981-07-17 | 1982-07-07 | A dry etching apparatus |
Country Status (4)
Country | Link |
---|---|
US (1) | US4431473A (de) |
EP (1) | EP0072618B1 (de) |
JP (1) | JPS5816078A (de) |
DE (1) | DE3270093D1 (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581118A (en) * | 1983-01-26 | 1986-04-08 | Materials Research Corporation | Shaped field magnetron electrode |
JPS6134177A (ja) * | 1984-07-25 | 1986-02-18 | Tokuda Seisakusho Ltd | マグネツト駆動装置 |
JPS61119040A (ja) * | 1984-11-15 | 1986-06-06 | Tokyo Denshi Kagaku Kabushiki | 真空処理装置 |
JPS61131454A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | マイクロ波プラズマ処理方法と装置 |
US4572759A (en) * | 1984-12-26 | 1986-02-25 | Benzing Technology, Inc. | Troide plasma reactor with magnetic enhancement |
DE3500328A1 (de) * | 1985-01-07 | 1986-07-10 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | Zerstaeubungsaetzvorrichtung |
US4588490A (en) * | 1985-05-22 | 1986-05-13 | International Business Machines Corporation | Hollow cathode enhanced magnetron sputter device |
US4624728A (en) * | 1985-06-11 | 1986-11-25 | Tegal Corporation | Pin lift plasma processing |
US4624738A (en) * | 1985-07-12 | 1986-11-25 | E. T. Plasma, Inc. | Continuous gas plasma etching apparatus and method |
JPH07105345B2 (ja) * | 1985-08-08 | 1995-11-13 | 日電アネルバ株式会社 | 基体処理装置 |
US4632719A (en) * | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
US4871433A (en) * | 1986-04-04 | 1989-10-03 | Materials Research Corporation | Method and apparatus for improving the uniformity ion bombardment in a magnetron sputtering system |
CH668565A5 (de) * | 1986-06-23 | 1989-01-13 | Balzers Hochvakuum | Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz. |
JPS6386879A (ja) * | 1986-09-30 | 1988-04-18 | Toshiba Corp | ドライエツチング装置及びその製造方法 |
JPS63109181A (ja) * | 1986-10-23 | 1988-05-13 | Anelva Corp | テ−パ−エツチング方法とその装置 |
ES2058132T3 (es) * | 1986-12-19 | 1994-11-01 | Applied Materials Inc | Reactor para ataque en plasma intensificado por un campo magnetico. |
US4836905A (en) * | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Processing apparatus |
DE68912400T2 (de) * | 1988-05-23 | 1994-08-18 | Nippon Telegraph & Telephone | Plasmaätzvorrichtung. |
JP2934711B2 (ja) * | 1989-12-07 | 1999-08-16 | カシオ計算機株式会社 | スパッタ装置 |
DE4117368A1 (de) * | 1991-05-28 | 1992-12-03 | Leybold Ag | Sputtervorrichtung mit rotierendem target und einer targetkuehlung |
US5262032A (en) * | 1991-05-28 | 1993-11-16 | Leybold Aktiengesellschaft | Sputtering apparatus with rotating target and target cooling |
JP2661455B2 (ja) * | 1992-03-27 | 1997-10-08 | 株式会社日立製作所 | 真空処理装置 |
US5413360A (en) * | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
US5791895A (en) * | 1994-02-17 | 1998-08-11 | Novellus Systems, Inc. | Apparatus for thermal treatment of thin film wafer |
JPH07258839A (ja) * | 1994-03-18 | 1995-10-09 | Hitachi Ltd | スパッタリング装置 |
US5592358A (en) * | 1994-07-18 | 1997-01-07 | Applied Materials, Inc. | Electrostatic chuck for magnetic flux processing |
US5671116A (en) * | 1995-03-10 | 1997-09-23 | Lam Research Corporation | Multilayered electrostatic chuck and method of manufacture thereof |
TW283250B (en) | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
US5708556A (en) * | 1995-07-10 | 1998-01-13 | Watkins Johnson Company | Electrostatic chuck assembly |
US5835333A (en) * | 1995-10-30 | 1998-11-10 | Lam Research Corporation | Negative offset bipolar electrostatic chucks |
US5669977A (en) * | 1995-12-22 | 1997-09-23 | Lam Research Corporation | Shape memory alloy lift pins for semiconductor processing equipment |
US5812361A (en) * | 1996-03-29 | 1998-09-22 | Lam Research Corporation | Dynamic feedback electrostatic wafer chuck |
US5796066A (en) * | 1996-03-29 | 1998-08-18 | Lam Research Corporation | Cable actuated drive assembly for vacuum chamber |
US6177023B1 (en) | 1997-07-11 | 2001-01-23 | Applied Komatsu Technology, Inc. | Method and apparatus for electrostatically maintaining substrate flatness |
US6958098B2 (en) * | 2000-02-28 | 2005-10-25 | Applied Materials, Inc. | Semiconductor wafer support lift-pin assembly |
US6572708B2 (en) | 2000-02-28 | 2003-06-03 | Applied Materials Inc. | Semiconductor wafer support lift-pin assembly |
US6485605B1 (en) * | 2000-04-20 | 2002-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd | High temperature process chamber having improved heat endurance |
WO2002043466A2 (en) | 2000-11-30 | 2002-06-06 | North Carolina State University | Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
US6784085B2 (en) | 2000-11-30 | 2004-08-31 | North Carolina State University | MIIIN based materials and methods and apparatus for producing same |
US6403322B1 (en) | 2001-03-27 | 2002-06-11 | Lam Research Corporation | Acoustic detection of dechucking and apparatus therefor |
US6528427B2 (en) | 2001-03-30 | 2003-03-04 | Lam Research Corporation | Methods for reducing contamination of semiconductor substrates |
US6846396B2 (en) * | 2002-08-08 | 2005-01-25 | Applied Materials, Inc. | Active magnetic shielding |
KR20050038134A (ko) * | 2003-10-21 | 2005-04-27 | 삼성전자주식회사 | 기판 스토킹 시스템 |
US8500975B2 (en) | 2004-01-07 | 2013-08-06 | Applied Materials, Inc. | Method and apparatus for sputtering onto large flat panels |
US7513982B2 (en) * | 2004-01-07 | 2009-04-07 | Applied Materials, Inc. | Two dimensional magnetron scanning for flat panel sputtering |
KR100817644B1 (ko) * | 2004-02-27 | 2008-03-27 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 |
US20070029046A1 (en) * | 2005-08-04 | 2007-02-08 | Applied Materials, Inc. | Methods and systems for increasing substrate temperature in plasma reactors |
KR100724571B1 (ko) * | 2006-02-13 | 2007-06-04 | 삼성전자주식회사 | 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법 |
JP5310512B2 (ja) * | 2009-12-02 | 2013-10-09 | 東京エレクトロン株式会社 | 基板処理装置 |
US20130240147A1 (en) * | 2012-03-19 | 2013-09-19 | Sang Ki Nam | Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system |
CN106711080A (zh) * | 2015-11-16 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 承载装置及半导体加工设备 |
DE102017109820B4 (de) * | 2017-04-26 | 2024-03-28 | VON ARDENNE Asset GmbH & Co. KG | Vakuumkammeranordnung und deren Verwendung |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3471396A (en) * | 1967-04-10 | 1969-10-07 | Ibm | R.f. cathodic sputtering apparatus having an electrically conductive housing |
JPS5132490A (ja) * | 1974-09-13 | 1976-03-19 | Shimada Rika Kogyo Kk | Supatsutasochi |
US3981791A (en) * | 1975-03-10 | 1976-09-21 | Signetics Corporation | Vacuum sputtering apparatus |
DE2735525A1 (de) * | 1977-08-06 | 1979-02-22 | Leybold Heraeus Gmbh & Co Kg | Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate |
US4158589A (en) * | 1977-12-30 | 1979-06-19 | International Business Machines Corporation | Negative ion extractor for a plasma etching apparatus |
US4324631A (en) * | 1979-07-23 | 1982-04-13 | Spin Physics, Inc. | Magnetron sputtering of magnetic materials |
JPS5623745A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Plasma etching device |
JPS5681533U (de) * | 1979-11-27 | 1981-07-01 | ||
JPS5687667A (en) * | 1979-12-20 | 1981-07-16 | Toshiba Corp | Reactive ion etching method |
US4313783A (en) * | 1980-05-19 | 1982-02-02 | Branson International Plasma Corporation | Computer controlled system for processing semiconductor wafers |
JPS5730341A (en) * | 1980-07-30 | 1982-02-18 | Anelva Corp | Substrate processing device |
US4341582A (en) * | 1980-12-22 | 1982-07-27 | The Perkin-Elmer Corporation | Load-lock vacuum chamber |
US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
US4367114A (en) * | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
US4384938A (en) * | 1982-05-03 | 1983-05-24 | International Business Machines Corporation | Reactive ion etching chamber |
-
1981
- 1981-07-17 JP JP56110904A patent/JPS5816078A/ja active Pending
-
1982
- 1982-07-07 US US06/396,123 patent/US4431473A/en not_active Expired - Lifetime
- 1982-07-07 EP EP82303563A patent/EP0072618B1/de not_active Expired
- 1982-07-07 DE DE8282303563T patent/DE3270093D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0072618A3 (en) | 1983-08-03 |
US4431473A (en) | 1984-02-14 |
EP0072618A2 (de) | 1983-02-23 |
JPS5816078A (ja) | 1983-01-29 |
EP0072618B1 (de) | 1986-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |