DE3243660C2 - - Google Patents

Info

Publication number
DE3243660C2
DE3243660C2 DE3243660A DE3243660A DE3243660C2 DE 3243660 C2 DE3243660 C2 DE 3243660C2 DE 3243660 A DE3243660 A DE 3243660A DE 3243660 A DE3243660 A DE 3243660A DE 3243660 C2 DE3243660 C2 DE 3243660C2
Authority
DE
Germany
Prior art keywords
circuit
transformer
effect transistor
driver circuit
push
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3243660A
Other languages
German (de)
English (en)
Other versions
DE3243660A1 (de
Inventor
Heinrich Dipl.-Ing. Dr.Techn. Pichler
Hermann Dipl.-Ing. Dum
Johannes Dipl.-Ing. Wien At Neier
Otto Dipl.-Ing. Goetzis At Jagschitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zumtobel AG
Original Assignee
ZUMTOBEL-AG DORNBIRN AT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZUMTOBEL-AG DORNBIRN AT filed Critical ZUMTOBEL-AG DORNBIRN AT
Publication of DE3243660A1 publication Critical patent/DE3243660A1/de
Application granted granted Critical
Publication of DE3243660C2 publication Critical patent/DE3243660C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/667—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor using complementary bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
DE19823243660 1981-11-26 1982-11-25 Schaltungsanordnung fuer eine potentialgetrennte ansteuerung wenigstens eines feldeffekttransistors Granted DE3243660A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0510381A AT377138B (de) 1981-11-26 1981-11-26 Schaltungsanordnung fuer eine potentialgetrennte ansteuerung wenigstens eines feldeffekttransistors

Publications (2)

Publication Number Publication Date
DE3243660A1 DE3243660A1 (de) 1983-06-01
DE3243660C2 true DE3243660C2 (OSRAM) 1991-03-21

Family

ID=3571949

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823243660 Granted DE3243660A1 (de) 1981-11-26 1982-11-25 Schaltungsanordnung fuer eine potentialgetrennte ansteuerung wenigstens eines feldeffekttransistors

Country Status (2)

Country Link
AT (1) AT377138B (OSRAM)
DE (1) DE3243660A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4126588A1 (de) * 1991-08-12 1993-02-18 Abb Patent Gmbh Schaltungsanordnung zum ausloesen einer schaltfunktion bei einem elektrisch gesteuerten leistungsschalter

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556905B1 (fr) * 1983-12-14 1989-07-13 Europ Agence Spatiale Circuit de commande pour transistor a effet de champ de puissance
EP0177148A3 (en) * 1984-08-29 1987-06-03 Unisys Corporation Power supplies using mosfet devices
FR2583235B1 (fr) * 1985-06-11 1992-11-27 Inf Milit Spatiale Aeronaut Dispositif miniaturise de transmission d'informations binaires par transformateur d'impulsions avec reconstitution de la composante continue
FR2591831A1 (fr) * 1985-12-13 1987-06-19 Thomson Lgt Circuit de commande rapide de transistors a effet de champ de puissance
DE3712998A1 (de) * 1987-04-16 1988-11-03 Ant Nachrichtentech Komplementaertransistorstufe zur ansteuerung kapazitiver lasten sowie verwendung
FR2684500B1 (fr) * 1991-12-02 1994-06-10 Rahban Thierry Generateur bipolaire a isolation galvanique de polarite commutable.
GB2341288B (en) * 1998-06-23 2003-12-10 Eev Ltd Switching arrangement
FI110972B (fi) * 1999-03-10 2003-04-30 Abb Industry Oy Stabiloitu hilaohjain
DE102006059833B4 (de) * 2006-12-15 2016-12-01 Sew-Eurodrive Gmbh & Co Kg Elektrisches Gerät
FR3057722B1 (fr) * 2016-10-18 2018-11-30 Thales Dispositif de commande d'un transistor
DE102016223258A1 (de) * 2016-11-24 2018-05-24 Siemens Aktiengesellschaft Ansteueranordnung für spannungsgesteuerte Schaltelemente

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54134547A (en) * 1978-04-11 1979-10-19 Sony Corp Mosfet switching circuit
DE3045771A1 (de) * 1980-12-04 1982-07-08 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zum ansteuern eines leistungs-fet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4126588A1 (de) * 1991-08-12 1993-02-18 Abb Patent Gmbh Schaltungsanordnung zum ausloesen einer schaltfunktion bei einem elektrisch gesteuerten leistungsschalter

Also Published As

Publication number Publication date
DE3243660A1 (de) 1983-06-01
ATA510381A (de) 1984-06-15
AT377138B (de) 1985-02-11

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: ZUMTOBEL BETEILIGUNGS- U. VERWALTUNGS-AG, DORNBIRN

8127 New person/name/address of the applicant

Owner name: ZUMTOBEL AG, DORNBIRN, AT

8128 New person/name/address of the agent

Representative=s name: MITSCHERLICH, H., DIPL.-ING. GUNSCHMANN, K., DIPL.

8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee