DE68922762T2 - Schaltungsvorrichtung mit geringer Absorption zum Steuern eines Leistungstransistors. - Google Patents

Schaltungsvorrichtung mit geringer Absorption zum Steuern eines Leistungstransistors.

Info

Publication number
DE68922762T2
DE68922762T2 DE68922762T DE68922762T DE68922762T2 DE 68922762 T2 DE68922762 T2 DE 68922762T2 DE 68922762 T DE68922762 T DE 68922762T DE 68922762 T DE68922762 T DE 68922762T DE 68922762 T2 DE68922762 T2 DE 68922762T2
Authority
DE
Germany
Prior art keywords
controlling
circuit device
power transistor
low absorption
absorption circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922762T
Other languages
English (en)
Other versions
DE68922762D1 (de
Inventor
Antonella Baiocchi
Angelo Alzati
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Application granted granted Critical
Publication of DE68922762D1 publication Critical patent/DE68922762D1/de
Publication of DE68922762T2 publication Critical patent/DE68922762T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
DE68922762T 1988-02-29 1989-01-20 Schaltungsvorrichtung mit geringer Absorption zum Steuern eines Leistungstransistors. Expired - Fee Related DE68922762T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8819588A IT1216481B (it) 1988-02-29 1988-02-29 Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di

Publications (2)

Publication Number Publication Date
DE68922762D1 DE68922762D1 (de) 1995-06-29
DE68922762T2 true DE68922762T2 (de) 1995-10-12

Family

ID=11159268

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922762T Expired - Fee Related DE68922762T2 (de) 1988-02-29 1989-01-20 Schaltungsvorrichtung mit geringer Absorption zum Steuern eines Leistungstransistors.

Country Status (5)

Country Link
US (1) US4931676A (de)
EP (1) EP0330823B1 (de)
JP (1) JP2777175B2 (de)
DE (1) DE68922762T2 (de)
IT (1) IT1216481B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2644651B1 (fr) * 1989-03-15 1991-07-05 Sgs Thomson Microelectronics Circuit de commande de transistor mos de puissance sur charge inductive
EP0398170A3 (de) * 1989-05-17 1991-04-17 National Semiconductor Corporation Zeitlich begrenzte Anhebung des Ansteuerstroms für einen DMOS-Transistortreiber mit schnellem Einschalten und niedrigem Ruhestrom
JP2623934B2 (ja) * 1989-07-26 1997-06-25 日本電気株式会社 電流検出回路
US5177374A (en) * 1990-10-03 1993-01-05 International Business Machines Corporation Current mode gate drive for power mos transistors
US5124632A (en) * 1991-07-01 1992-06-23 Motorola, Inc. Low-voltage precision current generator
US5467051A (en) * 1993-09-01 1995-11-14 Motorola, Inc. Low voltage precision switch
DE10154642C1 (de) 2001-11-07 2003-07-17 Siemens Ag Auswerteschaltung für einen induktiven Sensor
DE10252827B3 (de) * 2002-11-13 2004-08-05 Siemens Ag Schaltungsanordnung zur schnellen Ansteuerung insbesondere induktiver Lasten
US6919651B2 (en) 2002-11-26 2005-07-19 Siemens Aktiengesellschaft Circuit arrangement for high-speed switching of inductive loads
US8964436B2 (en) * 2012-10-16 2015-02-24 Hong Kong Applied Science & Technology Research Institute Company, Limited Self-starting transistor-only full-wave rectifier for on-chip AC-DC conversion
US8797776B2 (en) * 2012-10-16 2014-08-05 Hong Kong Applied Science & Technology Research Institute Co., Ltd. Diode-less full-wave rectifier for low-power on-chip AC-DC conversion

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496441A (en) * 1965-10-05 1970-02-17 Licentia Gmbh D.c. motor control circuit
NL7105838A (de) * 1971-04-29 1972-10-31
FR2470484A1 (fr) * 1979-11-23 1981-05-29 Thomson Csf Procede de commande d'un montage darlington et montage darlington a faibles pertes
FR2525841B1 (fr) * 1982-04-21 1990-11-02 Motorola Inc Dispositif de traitement de signaux pour circuit de conversation telephonique
US4540899A (en) * 1982-09-30 1985-09-10 International Rectifier Corporation Hammer drive circuit using power MOSFETs
JPS6022862A (ja) * 1983-07-18 1985-02-05 Rohm Co Ltd 電源回路
FR2561471B1 (fr) * 1984-03-16 1986-09-19 Thomson Csf Circuit de commande de commutation d'un transistor de puissance
US4553082A (en) * 1984-05-25 1985-11-12 Hughes Aircraft Company Transformerless drive circuit for field-effect transistors
JPS61212907A (ja) * 1985-03-18 1986-09-20 Fujitsu Ltd 半導体集積回路
US4689607A (en) * 1986-01-27 1987-08-25 General Datacomm, Inc. Bidirectional transconductance amplifier
FR2606960A1 (fr) * 1986-11-14 1988-05-20 Efcis Circuit d'emission de signaux numeriques pour un reseau telephonique

Also Published As

Publication number Publication date
IT1216481B (it) 1990-03-08
EP0330823B1 (de) 1995-05-24
IT8819588A0 (it) 1988-02-29
JP2777175B2 (ja) 1998-07-16
EP0330823A2 (de) 1989-09-06
DE68922762D1 (de) 1995-06-29
US4931676A (en) 1990-06-05
EP0330823A3 (de) 1991-07-03
JPH029220A (ja) 1990-01-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee