IT1216481B - Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di - Google Patents

Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di

Info

Publication number
IT1216481B
IT1216481B IT8819588A IT1958888A IT1216481B IT 1216481 B IT1216481 B IT 1216481B IT 8819588 A IT8819588 A IT 8819588A IT 1958888 A IT1958888 A IT 1958888A IT 1216481 B IT1216481 B IT 1216481B
Authority
IT
Italy
Prior art keywords
command
power
circuit device
switching transistor
low absorption
Prior art date
Application number
IT8819588A
Other languages
English (en)
Other versions
IT8819588A0 (it
Inventor
Antonella Bajocchi
Angelo Alzati
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8819588A priority Critical patent/IT1216481B/it
Publication of IT8819588A0 publication Critical patent/IT8819588A0/it
Priority to US07/298,652 priority patent/US4931676A/en
Priority to EP89100946A priority patent/EP0330823B1/en
Priority to DE68922762T priority patent/DE68922762T2/de
Priority to JP1045567A priority patent/JP2777175B2/ja
Application granted granted Critical
Publication of IT1216481B publication Critical patent/IT1216481B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
IT8819588A 1988-02-29 1988-02-29 Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di IT1216481B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8819588A IT1216481B (it) 1988-02-29 1988-02-29 Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di
US07/298,652 US4931676A (en) 1988-02-29 1989-01-18 Low-absorption circuit device for controlling a power transistor into the on state
EP89100946A EP0330823B1 (en) 1988-02-29 1989-01-20 A low-absorption circuit device for controlling a power transistor into the on state
DE68922762T DE68922762T2 (de) 1988-02-29 1989-01-20 Schaltungsvorrichtung mit geringer Absorption zum Steuern eines Leistungstransistors.
JP1045567A JP2777175B2 (ja) 1988-02-29 1989-02-28 電力トランジスタの低吸収制御回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8819588A IT1216481B (it) 1988-02-29 1988-02-29 Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di

Publications (2)

Publication Number Publication Date
IT8819588A0 IT8819588A0 (it) 1988-02-29
IT1216481B true IT1216481B (it) 1990-03-08

Family

ID=11159268

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8819588A IT1216481B (it) 1988-02-29 1988-02-29 Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di

Country Status (5)

Country Link
US (1) US4931676A (it)
EP (1) EP0330823B1 (it)
JP (1) JP2777175B2 (it)
DE (1) DE68922762T2 (it)
IT (1) IT1216481B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2644651B1 (fr) * 1989-03-15 1991-07-05 Sgs Thomson Microelectronics Circuit de commande de transistor mos de puissance sur charge inductive
EP0398170A3 (en) * 1989-05-17 1991-04-17 National Semiconductor Corporation Timed current boost for dmost driver with rapid turn-on and low quiescent current
JP2623934B2 (ja) * 1989-07-26 1997-06-25 日本電気株式会社 電流検出回路
US5177374A (en) * 1990-10-03 1993-01-05 International Business Machines Corporation Current mode gate drive for power mos transistors
US5124632A (en) * 1991-07-01 1992-06-23 Motorola, Inc. Low-voltage precision current generator
US5467051A (en) * 1993-09-01 1995-11-14 Motorola, Inc. Low voltage precision switch
DE10154642C1 (de) 2001-11-07 2003-07-17 Siemens Ag Auswerteschaltung für einen induktiven Sensor
DE10252827B3 (de) * 2002-11-13 2004-08-05 Siemens Ag Schaltungsanordnung zur schnellen Ansteuerung insbesondere induktiver Lasten
US6919651B2 (en) 2002-11-26 2005-07-19 Siemens Aktiengesellschaft Circuit arrangement for high-speed switching of inductive loads
US8964436B2 (en) * 2012-10-16 2015-02-24 Hong Kong Applied Science & Technology Research Institute Company, Limited Self-starting transistor-only full-wave rectifier for on-chip AC-DC conversion
US8797776B2 (en) * 2012-10-16 2014-08-05 Hong Kong Applied Science & Technology Research Institute Co., Ltd. Diode-less full-wave rectifier for low-power on-chip AC-DC conversion

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496441A (en) * 1965-10-05 1970-02-17 Licentia Gmbh D.c. motor control circuit
NL7105838A (it) * 1971-04-29 1972-10-31
FR2470484A1 (fr) * 1979-11-23 1981-05-29 Thomson Csf Procede de commande d'un montage darlington et montage darlington a faibles pertes
FR2525841B1 (fr) * 1982-04-21 1990-11-02 Motorola Inc Dispositif de traitement de signaux pour circuit de conversation telephonique
US4540899A (en) * 1982-09-30 1985-09-10 International Rectifier Corporation Hammer drive circuit using power MOSFETs
JPS6022862A (ja) * 1983-07-18 1985-02-05 Rohm Co Ltd 電源回路
FR2561471B1 (fr) * 1984-03-16 1986-09-19 Thomson Csf Circuit de commande de commutation d'un transistor de puissance
US4553082A (en) * 1984-05-25 1985-11-12 Hughes Aircraft Company Transformerless drive circuit for field-effect transistors
JPS61212907A (ja) * 1985-03-18 1986-09-20 Fujitsu Ltd 半導体集積回路
US4689607A (en) * 1986-01-27 1987-08-25 General Datacomm, Inc. Bidirectional transconductance amplifier
FR2606960A1 (fr) * 1986-11-14 1988-05-20 Efcis Circuit d'emission de signaux numeriques pour un reseau telephonique

Also Published As

Publication number Publication date
DE68922762D1 (de) 1995-06-29
DE68922762T2 (de) 1995-10-12
US4931676A (en) 1990-06-05
EP0330823A3 (en) 1991-07-03
JPH029220A (ja) 1990-01-12
IT8819588A0 (it) 1988-02-29
JP2777175B2 (ja) 1998-07-16
EP0330823B1 (en) 1995-05-24
EP0330823A2 (en) 1989-09-06

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Effective date: 19970227