DE3201081C2 - - Google Patents

Info

Publication number
DE3201081C2
DE3201081C2 DE3201081A DE3201081A DE3201081C2 DE 3201081 C2 DE3201081 C2 DE 3201081C2 DE 3201081 A DE3201081 A DE 3201081A DE 3201081 A DE3201081 A DE 3201081A DE 3201081 C2 DE3201081 C2 DE 3201081C2
Authority
DE
Germany
Prior art keywords
recording material
layer
material according
atoms
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3201081A
Other languages
German (de)
English (en)
Other versions
DE3201081A1 (de
Inventor
Shigeru Yamato Kanagawa Jp Shirai
Junichiro Kanbe
Tadaji Yokohama Kanagawa Jp Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56005528A external-priority patent/JPS57119360A/ja
Priority claimed from JP56005527A external-priority patent/JPS57119359A/ja
Priority claimed from JP56005755A external-priority patent/JPS57119362A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3201081A1 publication Critical patent/DE3201081A1/de
Application granted granted Critical
Publication of DE3201081C2 publication Critical patent/DE3201081C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19823201081 1981-01-16 1982-01-15 Photoleitfaehiges element Granted DE3201081A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56005528A JPS57119360A (en) 1981-01-16 1981-01-16 Photoconductive member
JP56005527A JPS57119359A (en) 1981-01-16 1981-01-16 Photoconductive member
JP56005755A JPS57119362A (en) 1981-01-17 1981-01-17 Photoconductive member

Publications (2)

Publication Number Publication Date
DE3201081A1 DE3201081A1 (de) 1982-08-26
DE3201081C2 true DE3201081C2 (US07223432-20070529-C00017.png) 1988-03-17

Family

ID=27276795

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823201081 Granted DE3201081A1 (de) 1981-01-16 1982-01-15 Photoleitfaehiges element

Country Status (3)

Country Link
US (1) US4490453A (US07223432-20070529-C00017.png)
DE (1) DE3201081A1 (US07223432-20070529-C00017.png)
GB (1) GB2095031B (US07223432-20070529-C00017.png)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4795688A (en) * 1982-03-16 1989-01-03 Canon Kabushiki Kaisha Layered photoconductive member comprising amorphous silicon
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
US4569894A (en) * 1983-01-14 1986-02-11 Canon Kabushiki Kaisha Photoconductive member comprising germanium atoms
DE3411475A1 (de) * 1983-03-28 1984-10-04 Canon K.K., Tokio/Tokyo Lichtempfangendes aufzeichnungselement
JPS59184356A (ja) * 1983-04-02 1984-10-19 Canon Inc 電子写真用光導電部材
DE3420741C2 (de) * 1983-06-02 1996-03-28 Minolta Camera Kk Elektrophotographisches Aufzeichnungsmaterial
JPS6022131A (ja) * 1983-07-18 1985-02-04 Canon Inc 電子写真用光導電部材
JPS6041046A (ja) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd 電子写真用感光体
JPS6045258A (ja) * 1983-08-23 1985-03-11 Sharp Corp 電子写真感光体
US4587190A (en) * 1983-09-05 1986-05-06 Canon Kabushiki Kaisha Photoconductive member comprising amorphous silicon-germanium and nitrogen
US4585719A (en) * 1983-09-05 1986-04-29 Canon Kabushiki Kaisha Photoconductive member comprising (SI-GE)-SI and N
US4585721A (en) * 1983-09-05 1986-04-29 Canon Kabushiki Kaisha Photoconductive member comprising amorphous germanium, amorphous silicon and nitrogen
US4592979A (en) * 1983-09-09 1986-06-03 Canon Kabushiki Kaisha Photoconductive member of amorphous germanium and silicon with nitrogen
US4579797A (en) * 1983-10-25 1986-04-01 Canon Kabushiki Kaisha Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant
JPH0680463B2 (ja) * 1983-12-28 1994-10-12 株式会社リコー 電子写真感光体
US4624905A (en) * 1984-02-14 1986-11-25 Sanyo Electric Co., Ltd. Electrophotographic photosensitive member
JPS616654A (ja) * 1984-06-21 1986-01-13 Stanley Electric Co Ltd 電子写真感光体及びその製造方法
JPS6123158A (ja) * 1984-07-11 1986-01-31 Stanley Electric Co Ltd 電子写真用感光体
JPS61221752A (ja) * 1985-03-12 1986-10-02 Sharp Corp 電子写真感光体
US4678731A (en) * 1985-06-25 1987-07-07 Kabushiki Kaisha Toshiba Electrophotographic photosensitive member having barrier layer comprising microcrystalline silicon containing hydrogen
US4663258A (en) * 1985-09-30 1987-05-05 Xerox Corporation Overcoated amorphous silicon imaging members
US5300951A (en) * 1985-11-28 1994-04-05 Kabushiki Kaisha Toshiba Member coated with ceramic material and method of manufacturing the same
US4795691A (en) * 1986-04-17 1989-01-03 Canon Kabushiki Kaisha Layered amorphous silicon photoconductor with surface layer having specific refractive index properties
US5053832A (en) * 1988-09-28 1991-10-01 Nec Corporation Nonlinear resistance element suitable for an active-type liquid crystal display
US5266409A (en) * 1989-04-28 1993-11-30 Digital Equipment Corporation Hydrogenated carbon compositions
US5281851A (en) * 1992-10-02 1994-01-25 Hewlett-Packard Company Integrated circuit packaging with reinforced leads
JP3254885B2 (ja) * 1994-03-22 2002-02-12 双葉電子工業株式会社 抵抗体の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS54145539A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device

Also Published As

Publication number Publication date
GB2095031B (en) 1985-02-20
GB2095031A (en) 1982-09-22
DE3201081A1 (de) 1982-08-26
US4490453A (en) 1984-12-25

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8380 Miscellaneous part iii

Free format text: DIE HAUPTKLASSE IST WIE ANGEGEBEN ZU BERICHTIGEN G03G 5/082

8380 Miscellaneous part iii

Free format text: SPALTE 3, ZEILE 15 "SI(PFEIL ABWAERTS)O(PFEIL ABWAERTS)I(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)O(PFEIL ABWAERTS), WORIN O = 0,33 BIS 0,40" AENDERN IN "SI(PFEIL ABWAERTS)O(PFEIL ABWAERTS)O(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)O(PFEIL ABWAERTS), WORIN O = 0,33 BIS 0,40"

8364 No opposition during term of opposition