DE3139711A1 - Glueheinrichtung - Google Patents

Glueheinrichtung

Info

Publication number
DE3139711A1
DE3139711A1 DE19813139711 DE3139711A DE3139711A1 DE 3139711 A1 DE3139711 A1 DE 3139711A1 DE 19813139711 DE19813139711 DE 19813139711 DE 3139711 A DE3139711 A DE 3139711A DE 3139711 A1 DE3139711 A1 DE 3139711A1
Authority
DE
Germany
Prior art keywords
discharge lamps
flash discharge
semiconductor wafer
light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19813139711
Other languages
German (de)
English (en)
Inventor
Tatsumi Himeji Hyogo Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of DE3139711A1 publication Critical patent/DE3139711A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19813139711 1980-10-09 1981-10-06 Glueheinrichtung Withdrawn DE3139711A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14047580A JPS5764936A (en) 1980-10-09 1980-10-09 Annealing device

Publications (1)

Publication Number Publication Date
DE3139711A1 true DE3139711A1 (de) 1982-05-13

Family

ID=15269461

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813139711 Withdrawn DE3139711A1 (de) 1980-10-09 1981-10-06 Glueheinrichtung

Country Status (2)

Country Link
JP (1) JPS5764936A (enrdf_load_stackoverflow)
DE (1) DE3139711A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345443A3 (en) * 1988-05-09 1990-03-28 Siemens Aktiengesellschaft Process for the rapid thermal annealing of a semiconductor wafer using irradiation
WO1999044225A1 (de) * 1998-02-27 1999-09-02 Daimlerchrysler Ag Verfahren zur herstellung eines mikroelektronischen halbleiterbauelements

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
CN1077352C (zh) * 1997-02-05 2002-01-02 Smc株式会社 致动器及其控制装置
JP4096527B2 (ja) * 2001-06-21 2008-06-04 ウシオ電機株式会社 閃光放射装置および熱処理装置
US7883988B2 (en) 2008-06-04 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50133532A (enrdf_load_stackoverflow) * 1974-04-10 1975-10-22
JPS5715814Y2 (enrdf_load_stackoverflow) * 1976-08-26 1982-04-02

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345443A3 (en) * 1988-05-09 1990-03-28 Siemens Aktiengesellschaft Process for the rapid thermal annealing of a semiconductor wafer using irradiation
WO1999044225A1 (de) * 1998-02-27 1999-09-02 Daimlerchrysler Ag Verfahren zur herstellung eines mikroelektronischen halbleiterbauelements
US6383902B1 (en) 1998-02-27 2002-05-07 Daimlerchrysler Ag Method for producing a microelectronic semiconductor component

Also Published As

Publication number Publication date
JPS5764936A (en) 1982-04-20
JPS6226571B2 (enrdf_load_stackoverflow) 1987-06-09

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8130 Withdrawal