DE3139531A1 - Photoleitfaehiges element - Google Patents
Photoleitfaehiges elementInfo
- Publication number
- DE3139531A1 DE3139531A1 DE19813139531 DE3139531A DE3139531A1 DE 3139531 A1 DE3139531 A1 DE 3139531A1 DE 19813139531 DE19813139531 DE 19813139531 DE 3139531 A DE3139531 A DE 3139531A DE 3139531 A1 DE3139531 A1 DE 3139531A1
- Authority
- DE
- Germany
- Prior art keywords
- photoconductive
- layer
- element according
- atoms
- photoconductive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 806
- 239000000463 material Substances 0.000 claims description 108
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 78
- 125000005843 halogen group Chemical group 0.000 claims description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 55
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 42
- 239000000126 substance Substances 0.000 claims description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 239000011229 interlayer Substances 0.000 claims description 15
- 230000000737 periodic effect Effects 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910052794 bromium Inorganic materials 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 9
- 239000000470 constituent Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- 239000004615 ingredient Substances 0.000 claims 2
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
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- 238000000151 deposition Methods 0.000 description 255
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- 230000015572 biosynthetic process Effects 0.000 description 92
- 229910021417 amorphous silicon Inorganic materials 0.000 description 85
- 125000004429 atom Chemical group 0.000 description 72
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- 239000007858 starting material Substances 0.000 description 55
- 238000004519 manufacturing process Methods 0.000 description 50
- 229910052750 molybdenum Inorganic materials 0.000 description 49
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 48
- 239000011733 molybdenum Substances 0.000 description 48
- 238000000926 separation method Methods 0.000 description 48
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- 238000012360 testing method Methods 0.000 description 30
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 28
- 239000000203 mixture Substances 0.000 description 21
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- 229910052786 argon Inorganic materials 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 15
- 230000001105 regulatory effect Effects 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 13
- 230000001419 dependent effect Effects 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910052801 chlorine Inorganic materials 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 10
- 150000002367 halogens Chemical class 0.000 description 10
- 238000007733 ion plating Methods 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 238000009423 ventilation Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 150000004756 silanes Chemical class 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 7
- 238000007865 diluting Methods 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- 238000005546 reactive sputtering Methods 0.000 description 7
- 150000003377 silicon compounds Chemical class 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
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- 239000000243 solution Substances 0.000 description 6
- 230000004304 visual acuity Effects 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 5
- 229910003902 SiCl 4 Inorganic materials 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910001179 chromel Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
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- 229910052734 helium Inorganic materials 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
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- 230000035945 sensitivity Effects 0.000 description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
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- 238000005468 ion implantation Methods 0.000 description 4
- 229910052754 neon Inorganic materials 0.000 description 4
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 3
- 229910003691 SiBr Inorganic materials 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 3
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- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
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- 125000005376 alkyl siloxane group Chemical group 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
- WFPZPJSADLPSON-UHFFFAOYSA-N dinitrogen tetraoxide Chemical compound [O-][N+](=O)[N+]([O-])=O WFPZPJSADLPSON-UHFFFAOYSA-N 0.000 description 2
- 210000003608 fece Anatomy 0.000 description 2
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- RAUWPNXIALNKQM-UHFFFAOYSA-N 4-nitro-1,2-phenylenediamine Chemical compound NC1=CC=C([N+]([O-])=O)C=C1N RAUWPNXIALNKQM-UHFFFAOYSA-N 0.000 description 1
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- CVRALZAYCYJELZ-UHFFFAOYSA-N O-(4-bromo-2,5-dichlorophenyl) O-methyl phenylphosphonothioate Chemical compound C=1C=CC=CC=1P(=S)(OC)OC1=CC(Cl)=C(Br)C=C1Cl CVRALZAYCYJELZ-UHFFFAOYSA-N 0.000 description 1
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- 101150095510 TMEM35A gene Proteins 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
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- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55138982A JPS5763547A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
| JP55138981A JPS5763546A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
| JP55138980A JPS5763545A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
| JP55140960A JPS5764245A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
| JP55140962A JPS5764247A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
| JP55140961A JPS5764246A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3139531A1 true DE3139531A1 (de) | 1982-05-13 |
| DE3139531C2 DE3139531C2 (enrdf_load_stackoverflow) | 1988-12-22 |
Family
ID=27552908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813139531 Granted DE3139531A1 (de) | 1980-10-03 | 1981-10-05 | Photoleitfaehiges element |
Country Status (4)
| Country | Link |
|---|---|
| CA (1) | CA1181629A (enrdf_load_stackoverflow) |
| DE (1) | DE3139531A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2495344B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2088628B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3433161A1 (de) * | 1983-09-09 | 1985-03-28 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60146251A (ja) * | 1984-01-10 | 1985-08-01 | Sharp Corp | 電子写真用感光体の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2855718A1 (de) * | 1977-12-22 | 1979-06-28 | Canon Kk | Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
| DE2954551C2 (enrdf_load_stackoverflow) * | 1978-03-03 | 1989-02-09 | Canon K.K., Tokio/Tokyo, Jp | |
| DE3176910D1 (en) * | 1980-02-15 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Semiconductor photoelectric device |
| JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
| US4394426A (en) * | 1980-09-25 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(N) barrier layer |
-
1981
- 1981-10-01 GB GB8129627A patent/GB2088628B/en not_active Expired
- 1981-10-02 CA CA000387231A patent/CA1181629A/en not_active Expired
- 1981-10-05 DE DE19813139531 patent/DE3139531A1/de active Granted
- 1981-10-05 FR FR8118696A patent/FR2495344B1/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2855718A1 (de) * | 1977-12-22 | 1979-06-28 | Canon Kk | Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3433161A1 (de) * | 1983-09-09 | 1985-03-28 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges element |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2495344B1 (fr) | 1986-07-18 |
| GB2088628A (en) | 1982-06-09 |
| DE3139531C2 (enrdf_load_stackoverflow) | 1988-12-22 |
| GB2088628B (en) | 1985-06-12 |
| FR2495344A1 (fr) | 1982-06-04 |
| CA1181629A (en) | 1985-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8181 | Inventor (new situation) |
Free format text: SHIMIZU, ISAMU, YOKOHAMA, KANAGAWA, JP SHIRAI, SHIGERU, YAMATO, KANAGAWA, JP INOUE, EIICHI, TOKYO, JP |
|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |