CA1181629A - Photoconductive member including non-photoconductive layer containing amorphous silicon matrix-containing oxygen - Google Patents
Photoconductive member including non-photoconductive layer containing amorphous silicon matrix-containing oxygenInfo
- Publication number
- CA1181629A CA1181629A CA000387231A CA387231A CA1181629A CA 1181629 A CA1181629 A CA 1181629A CA 000387231 A CA000387231 A CA 000387231A CA 387231 A CA387231 A CA 387231A CA 1181629 A CA1181629 A CA 1181629A
- Authority
- CA
- Canada
- Prior art keywords
- member according
- photoconductive
- photoconductive member
- atoms
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 title claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 12
- 239000001301 oxygen Substances 0.000 title claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 title description 52
- 239000000463 material Substances 0.000 claims abstract description 103
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 87
- 125000005843 halogen group Chemical group 0.000 claims abstract description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 52
- 239000000470 constituent Substances 0.000 claims abstract description 50
- 230000035515 penetration Effects 0.000 claims abstract description 8
- 239000002800 charge carrier Substances 0.000 claims abstract 2
- 239000000543 intermediate Substances 0.000 claims description 263
- 239000012535 impurity Substances 0.000 claims description 36
- 230000000737 periodic effect Effects 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 229910052801 chlorine Inorganic materials 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052794 bromium Inorganic materials 0.000 claims description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 688
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- 238000005755 formation reaction Methods 0.000 description 103
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- 229910004014 SiF4 Inorganic materials 0.000 description 72
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 72
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- -1 ~iCr Chemical class 0.000 description 33
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 32
- 229910052681 coesite Inorganic materials 0.000 description 31
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- 230000006870 function Effects 0.000 description 29
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- 238000001816 cooling Methods 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
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- 229960001730 nitrous oxide Drugs 0.000 description 1
- 229940099990 ogen Drugs 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical group CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- IAQRGUVFOMOMEM-ONEGZZNKSA-N trans-but-2-ene Chemical compound C\C=C\C IAQRGUVFOMOMEM-ONEGZZNKSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP138980/1980 | 1980-10-03 | ||
| JP55138982A JPS5763547A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
| JP55138981A JPS5763546A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
| JP138982/1980 | 1980-10-03 | ||
| JP55138980A JPS5763545A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
| JP138981/1980 | 1980-10-03 | ||
| JP140960/1980 | 1980-10-08 | ||
| JP140962/1980 | 1980-10-08 | ||
| JP55140960A JPS5764245A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
| JP55140962A JPS5764247A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
| JP55140961A JPS5764246A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
| JP140961/1980 | 1980-10-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1181629A true CA1181629A (en) | 1985-01-29 |
Family
ID=27552908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000387231A Expired CA1181629A (en) | 1980-10-03 | 1981-10-02 | Photoconductive member including non-photoconductive layer containing amorphous silicon matrix-containing oxygen |
Country Status (4)
| Country | Link |
|---|---|
| CA (1) | CA1181629A (enrdf_load_stackoverflow) |
| DE (1) | DE3139531A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2495344B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2088628B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4572882A (en) * | 1983-09-09 | 1986-02-25 | Canon Kabushiki Kaisha | Photoconductive member containing amorphous silicon and germanium |
| JPS60146251A (ja) * | 1984-01-10 | 1985-08-01 | Sharp Corp | 電子写真用感光体の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
| AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
| DE2954551C2 (enrdf_load_stackoverflow) * | 1978-03-03 | 1989-02-09 | Canon K.K., Tokio/Tokyo, Jp | |
| DE3176910D1 (en) * | 1980-02-15 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Semiconductor photoelectric device |
| JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
| US4394426A (en) * | 1980-09-25 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(N) barrier layer |
-
1981
- 1981-10-01 GB GB8129627A patent/GB2088628B/en not_active Expired
- 1981-10-02 CA CA000387231A patent/CA1181629A/en not_active Expired
- 1981-10-05 DE DE19813139531 patent/DE3139531A1/de active Granted
- 1981-10-05 FR FR8118696A patent/FR2495344B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2495344B1 (fr) | 1986-07-18 |
| GB2088628A (en) | 1982-06-09 |
| DE3139531C2 (enrdf_load_stackoverflow) | 1988-12-22 |
| GB2088628B (en) | 1985-06-12 |
| FR2495344A1 (fr) | 1982-06-04 |
| DE3139531A1 (de) | 1982-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |