DE3127618A1 - "halbleiterlaser und verfahren zu seiner herstellung" - Google Patents

"halbleiterlaser und verfahren zu seiner herstellung"

Info

Publication number
DE3127618A1
DE3127618A1 DE19813127618 DE3127618A DE3127618A1 DE 3127618 A1 DE3127618 A1 DE 3127618A1 DE 19813127618 DE19813127618 DE 19813127618 DE 3127618 A DE3127618 A DE 3127618A DE 3127618 A1 DE3127618 A1 DE 3127618A1
Authority
DE
Germany
Prior art keywords
groove
semiconductor laser
layers
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19813127618
Other languages
German (de)
English (en)
Inventor
Osamu Yokohama Kanagawa Matsuda
Yoshifumi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3127618A1 publication Critical patent/DE3127618A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE19813127618 1980-07-16 1981-07-13 "halbleiterlaser und verfahren zu seiner herstellung" Ceased DE3127618A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9739880A JPS5723292A (en) 1980-07-16 1980-07-16 Semiconductor laser device and manufacture thereof

Publications (1)

Publication Number Publication Date
DE3127618A1 true DE3127618A1 (de) 1982-05-06

Family

ID=14191405

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813127618 Ceased DE3127618A1 (de) 1980-07-16 1981-07-13 "halbleiterlaser und verfahren zu seiner herstellung"

Country Status (6)

Country Link
US (1) US4503539A (enExample)
JP (1) JPS5723292A (enExample)
DE (1) DE3127618A1 (enExample)
FR (1) FR2487138A1 (enExample)
GB (1) GB2082381A (enExample)
NL (1) NL8103389A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3324594A1 (de) * 1982-07-07 1984-01-26 Mitsubishi Denki K.K., Tokyo Verfahren zur herstellung eines halbleiter-lasers
DE3827961A1 (de) * 1987-08-19 1989-03-02 Mitsubishi Electric Corp Halbleiterlaser
DE3908305A1 (de) * 1988-03-16 1989-09-28 Mitsubishi Electric Corp Halbleiterlaser

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
GB2127218B (en) * 1982-08-16 1986-05-21 Omron Tateisi Electronics Co Semiconductor laser
US4623427A (en) * 1983-08-12 1986-11-18 Hewlett-Packard Company Means and method for a self-aligned multilayer laser epitaxy structure device
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
JPH0834330B2 (ja) * 1988-03-22 1996-03-29 キヤノン株式会社 半導体レーザ装置
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ
US5138625A (en) * 1991-01-08 1992-08-11 Xerox Corporation Quantum wire semiconductor laser
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
EP0533197A3 (en) * 1991-09-20 1993-11-03 Fujitsu Ltd Stripe laser diode having an improved efficiency for current confinement
JPH0894938A (ja) * 1994-09-21 1996-04-12 Sony Corp 共焦点顕微鏡並びに光記録再生装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2626775A1 (de) * 1975-06-23 1976-12-30 Xerox Corp Diodenlaser mit heterouebergang
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS52109884A (en) * 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2626775A1 (de) * 1975-06-23 1976-12-30 Xerox Corp Diodenlaser mit heterouebergang
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DUPLUIS, R.D., DAPKUS, P.D.: Ga¶(1-x)¶ Al¶x¶As /Ga¶(1-y)¶ Al¶y¶ As double-heterostructure room temperature lasers grown by metalorganic chemical vapor deposition In: Applied Physics Letters, vol. 31, No. 12, 1977, 839-841 *
DUPUIS, R.D., DAPKUS, P.D.: Single-longitudinal -mode cw room-temperature Ga¶1-x¶ Al¶x¶ As-GaAs channel-guide lasers grown by metalorganic chemical vapor deposition. In: Applied Physics Letters, Vol. 33, No. 8, 1978, 724-726 *
FIGUEROA, L., WANG, S.: Inverted-ridge-waveguide double-heterostructure injection laser with current and lateral optical confinement. In: Applied Physics Letters, Vol. 31, No. 1, 1977, S. 45-47 *
NANNICHI, Y.: Reant Progress in Semiconductor Laser. In: Japanese Journal of Applied Physics, Vol. 16, No. 12, 1977, 2089-2102 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3324594A1 (de) * 1982-07-07 1984-01-26 Mitsubishi Denki K.K., Tokyo Verfahren zur herstellung eines halbleiter-lasers
DE3827961A1 (de) * 1987-08-19 1989-03-02 Mitsubishi Electric Corp Halbleiterlaser
DE3908305A1 (de) * 1988-03-16 1989-09-28 Mitsubishi Electric Corp Halbleiterlaser

Also Published As

Publication number Publication date
GB2082381A (en) 1982-03-03
NL8103389A (nl) 1982-02-16
JPS5723292A (en) 1982-02-06
FR2487138B1 (enExample) 1985-03-15
US4503539A (en) 1985-03-05
FR2487138A1 (fr) 1982-01-22
JPS6318877B2 (enExample) 1988-04-20

Similar Documents

Publication Publication Date Title
DE69032451T2 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE69838313T2 (de) Optoelektronische Halbleiteranordnung auf Basis einer Nitridverbindung der Gruppe III
DE3779775T2 (de) Halbleiterlaser mit streifenfoermiger mesa-wellenleiterstruktur und dessen herstellungsverfahren.
DE69510129T2 (de) Oberflächenemittierende lumineszente Halbleitervorrichtung
DE69315832T2 (de) Epitaktischer ohmscher Kontakt für integrierte Heterostruktur von II-VI-Halbleitermaterialien und Verfahren zu seiner Herstellung
DE3924197C2 (de) Halbleiterlaser
DE68908373T2 (de) Herstellungsverfahren für einen Halbleiterlaser mit nichtabsorbierender Spiegelstruktur.
DE3688064T2 (de) Halbleitervorrichtung.
DE69129181T2 (de) Optische Halbleitervorrichtung
DE4119921C2 (de) Halbleiterlaser zur Erzeugung sichtbaren Lichts
DE2165006A1 (de) Halbleiterkörper mit aktivem Bereich
DE69932686T2 (de) Halbleiterlichtstrahler und dessen Herstellungsverfahren
DE3127618A1 (de) &#34;halbleiterlaser und verfahren zu seiner herstellung&#34;
DE19504117A1 (de) Quantenverdrahtung und Verfahren zu deren Herstellung
DE3410793A1 (de) Halbleiter-laservorrichtung
DE69430524T2 (de) Verfahren zur Herstellung eines p-leitenden ohmschen Kontakts mit variabler Zusammensetzung für p-Typ II-VI Halbleiter
DE69309339T2 (de) Elektronenstrahl gepumpter Laserresonator mit asymmetrischer Halbleiter-Heterostruktur
DE60026991T2 (de) Halbleiterlaser mit vergrabener Streifenstruktur und aluminiumfreier Begrenzungsschicht
DE60012592T2 (de) Halbleiterlaser und Verfahren zu dessen Herstellung
DE60115351T2 (de) Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt
DE19610352A1 (de) Herstellungsverfahren eines Halbleiterlasers und dadurch hergestellter Halbleiterlaser
DE69610567T2 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
DE69313033T2 (de) Lichtemittierende Vorrichtung
DE3502326A1 (de) Licht emittierender chip und damit arbeitende optische kommunikationsvorrichtung
DE69424688T2 (de) Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection