DE3120124C2 - - Google Patents
Info
- Publication number
- DE3120124C2 DE3120124C2 DE3120124A DE3120124A DE3120124C2 DE 3120124 C2 DE3120124 C2 DE 3120124C2 DE 3120124 A DE3120124 A DE 3120124A DE 3120124 A DE3120124 A DE 3120124A DE 3120124 C2 DE3120124 C2 DE 3120124C2
- Authority
- DE
- Germany
- Prior art keywords
- thyristor
- cathode
- control electrode
- area
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000001465 metallisation Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 241000863814 Thyris Species 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/152,770 US4261000A (en) | 1980-05-23 | 1980-05-23 | High voltage semiconductor device having an improved dv/dt capability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3120124A1 DE3120124A1 (de) | 1982-03-04 |
| DE3120124C2 true DE3120124C2 (US07709020-20100504-C00041.png) | 1993-09-16 |
Family
ID=22544363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813120124 Granted DE3120124A1 (de) | 1980-05-23 | 1981-05-20 | Hochspannungshalbleitervorrichtung |
Country Status (6)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
| JPS61113279A (ja) * | 1984-11-08 | 1986-05-31 | Fuji Electric Co Ltd | 光サイリスタ |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4312107Y1 (US07709020-20100504-C00041.png) * | 1966-03-29 | 1968-05-24 | ||
| DE2146178C3 (de) * | 1971-09-15 | 1979-09-27 | Brown, Boveri & Cie Ag, 6800 Mannheim | Thyristor mit Steuerstromverstärkung |
| DE2238486A1 (de) * | 1972-08-04 | 1974-02-14 | Siemens Ag | Thyristor |
| DE2300754A1 (de) * | 1973-01-08 | 1974-07-11 | Siemens Ag | Thyristor |
| JPS502482A (US07709020-20100504-C00041.png) * | 1973-05-08 | 1975-01-11 | ||
| JPS5718347B2 (US07709020-20100504-C00041.png) * | 1974-01-07 | 1982-04-16 | ||
| GB1499845A (en) * | 1975-03-26 | 1978-02-01 | Mullard Ltd | Thyristors |
| DE2607678A1 (de) * | 1976-02-25 | 1977-09-01 | Siemens Ag | Anordnung zum herabsetzen der freiwerdezeit eines thyristors |
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| DE2739187C2 (de) * | 1977-08-31 | 1981-10-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps |
| DE2928685A1 (de) * | 1978-07-20 | 1980-01-31 | Electric Power Res Inst | Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor |
-
1980
- 1980-05-23 US US06/152,770 patent/US4261000A/en not_active Expired - Lifetime
-
1981
- 1981-05-01 CA CA000376669A patent/CA1160358A/en not_active Expired
- 1981-05-20 DE DE19813120124 patent/DE3120124A1/de active Granted
- 1981-05-21 SE SE8103223A patent/SE451918B/sv not_active IP Right Cessation
- 1981-05-22 CH CH3373/81A patent/CH655204A5/de not_active IP Right Cessation
- 1981-05-22 JP JP7680681A patent/JPS5718361A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4261000A (en) | 1981-04-07 |
| DE3120124A1 (de) | 1982-03-04 |
| SE8103223L (sv) | 1981-11-24 |
| JPS5718361A (en) | 1982-01-30 |
| CH655204A5 (de) | 1986-03-27 |
| CA1160358A (en) | 1984-01-10 |
| JPH0222547B2 (US07709020-20100504-C00041.png) | 1990-05-18 |
| SE451918B (sv) | 1987-11-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |