DE3104075A1 - "photoempfindlicher halbleiterwiderstand" - Google Patents

"photoempfindlicher halbleiterwiderstand"

Info

Publication number
DE3104075A1
DE3104075A1 DE19813104075 DE3104075A DE3104075A1 DE 3104075 A1 DE3104075 A1 DE 3104075A1 DE 19813104075 DE19813104075 DE 19813104075 DE 3104075 A DE3104075 A DE 3104075A DE 3104075 A1 DE3104075 A1 DE 3104075A1
Authority
DE
Germany
Prior art keywords
semiconductor
semiconductor body
resistor according
contact
cathode contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19813104075
Other languages
German (de)
English (en)
Inventor
Rainer 2000 Hamburg Burmeister
Helmut Ewaldt
Gerhard Dr. 2000 Hamburg Raabe
Heinz 2083 Halstenbek Sauermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Original Assignee
Philips Patentverwaltung GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH filed Critical Philips Patentverwaltung GmbH
Priority to DE19813104075 priority Critical patent/DE3104075A1/de
Priority to EP82200107A priority patent/EP0057958A3/de
Priority to US06/344,688 priority patent/US4462019A/en
Priority to JP57015033A priority patent/JPS57166084A/ja
Publication of DE3104075A1 publication Critical patent/DE3104075A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Light Receiving Elements (AREA)
DE19813104075 1981-02-06 1981-02-06 "photoempfindlicher halbleiterwiderstand" Withdrawn DE3104075A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19813104075 DE3104075A1 (de) 1981-02-06 1981-02-06 "photoempfindlicher halbleiterwiderstand"
EP82200107A EP0057958A3 (de) 1981-02-06 1982-01-29 Photoempfindlicher Halbleiterwiderstand
US06/344,688 US4462019A (en) 1981-02-06 1982-02-01 Photosensitive semiconductor resistor
JP57015033A JPS57166084A (en) 1981-02-06 1982-02-03 Semiconductor resistor sensing light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813104075 DE3104075A1 (de) 1981-02-06 1981-02-06 "photoempfindlicher halbleiterwiderstand"

Publications (1)

Publication Number Publication Date
DE3104075A1 true DE3104075A1 (de) 1982-09-09

Family

ID=6124171

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813104075 Withdrawn DE3104075A1 (de) 1981-02-06 1981-02-06 "photoempfindlicher halbleiterwiderstand"

Country Status (4)

Country Link
US (1) US4462019A (enExample)
EP (1) EP0057958A3 (enExample)
JP (1) JPS57166084A (enExample)
DE (1) DE3104075A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551623A (en) * 1981-12-07 1985-11-05 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Photoconductive detector with an A/C bias and responsivity dependent upon the polarity of the bias
US4636794A (en) * 1984-07-26 1987-01-13 Mcginn Vincent P Photo-conductive element operative in the microwave region and a light-steerable antenna array incorporating the photo-conductive element
US4918508A (en) * 1986-03-28 1990-04-17 General Electric Company Vertical photoconductive detector
CA1285642C (en) * 1986-03-28 1991-07-02 Robert John Mcintyre Vertical photoconductive detector
JP2701754B2 (ja) * 1994-10-03 1998-01-21 日本電気株式会社 シリコン受光素子の製造方法
US9243186B2 (en) 2012-08-17 2016-01-26 Suncoke Technology And Development Llc. Coke plant including exhaust gas sharing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices
US3660733A (en) * 1969-10-29 1972-05-02 Fernando Zhozevich Vilf Homogeneous semiconductor with interrelated antibarrier contacts
US3903428A (en) * 1973-12-28 1975-09-02 Hughes Aircraft Co Solar cell contact design

Also Published As

Publication number Publication date
EP0057958A3 (de) 1983-08-03
JPS6211794B2 (enExample) 1987-03-14
JPS57166084A (en) 1982-10-13
EP0057958A2 (de) 1982-08-18
US4462019A (en) 1984-07-24

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee