DE3071578D1 - Substrate bias generation circuit - Google Patents

Substrate bias generation circuit

Info

Publication number
DE3071578D1
DE3071578D1 DE8080108185T DE3071578T DE3071578D1 DE 3071578 D1 DE3071578 D1 DE 3071578D1 DE 8080108185 T DE8080108185 T DE 8080108185T DE 3071578 T DE3071578 T DE 3071578T DE 3071578 D1 DE3071578 D1 DE 3071578D1
Authority
DE
Germany
Prior art keywords
generation circuit
substrate bias
bias generation
substrate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080108185T
Other languages
English (en)
Inventor
Akira C O Prof Edward J Kanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3071578D1 publication Critical patent/DE3071578D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
DE8080108185T 1979-12-27 1980-12-23 Substrate bias generation circuit Expired DE3071578D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17165779A JPS5694654A (en) 1979-12-27 1979-12-27 Generating circuit for substrate bias voltage

Publications (1)

Publication Number Publication Date
DE3071578D1 true DE3071578D1 (en) 1986-05-28

Family

ID=15927272

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080108185T Expired DE3071578D1 (en) 1979-12-27 1980-12-23 Substrate bias generation circuit

Country Status (4)

Country Link
US (1) US4388537A (de)
EP (1) EP0032588B1 (de)
JP (1) JPS5694654A (de)
DE (1) DE3071578D1 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033314B2 (ja) * 1979-11-22 1985-08-02 富士通株式会社 基板バイアス電圧発生回路
ATE14261T1 (de) * 1980-12-22 1985-07-15 British Telecomm Elektronische taktsignalgeneratoren.
JPS57208251A (en) * 1981-06-19 1982-12-21 Canon Inc Ink jet head
JPS57186351A (en) * 1981-05-12 1982-11-16 Fujitsu Ltd Semiconductor device
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
JPS57204640A (en) * 1981-06-12 1982-12-15 Fujitsu Ltd Generating circuit of substrate bias voltage
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
US4433253A (en) * 1981-12-10 1984-02-21 Standard Microsystems Corporation Three-phase regulated high-voltage charge pump
JPS58118135A (ja) * 1982-01-06 1983-07-14 Hitachi Ltd ダイナミック型ｒａｍ
US4513427A (en) * 1982-08-30 1985-04-23 Xerox Corporation Data and clock recovery system for data communication controller
US4494021A (en) * 1982-08-30 1985-01-15 Xerox Corporation Self-calibrated clock and timing signal generator for MOS/VLSI circuitry
JPS59162690A (ja) * 1983-03-04 1984-09-13 Nec Corp 擬似スタテイツクメモリ
US4585954A (en) * 1983-07-08 1986-04-29 Texas Instruments Incorporated Substrate bias generator for dynamic RAM having variable pump current level
US4547682A (en) * 1983-10-27 1985-10-15 International Business Machines Corporation Precision regulation, frequency modulated substrate voltage generator
IT1220982B (it) * 1983-11-30 1990-06-21 Ates Componenti Elettron Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo
US4590389A (en) * 1984-04-02 1986-05-20 Motorola Inc. Compensation circuit and method for stabilization of a circuit node by multiplication of displacement current
JPS60253090A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 半導体装置
US4631421A (en) * 1984-08-14 1986-12-23 Texas Instruments CMOS substrate bias generator
US4656369A (en) * 1984-09-17 1987-04-07 Texas Instruments Incorporated Ring oscillator substrate bias generator with precharge voltage feedback control
JPS6445157A (en) * 1987-08-13 1989-02-17 Toshiba Corp Semiconductor integrated circuit
US5003197A (en) * 1989-01-19 1991-03-26 Xicor, Inc. Substrate bias voltage generating and regulating apparatus
DE58906588D1 (de) * 1989-03-06 1994-02-10 Siemens Ag Integrierte Referenzspannungsquelle.
JP2841480B2 (ja) * 1989-06-21 1998-12-24 日本電気株式会社 基板電位設定回路
US5132936A (en) * 1989-12-14 1992-07-21 Cypress Semiconductor Corporation MOS memory circuit with fast access time
DE69128102T2 (de) * 1990-03-26 1998-03-05 Micron Technology Inc Halbleiterspeicher mit hochwirksamer Ladungspumpenschaltung
JPH0494566A (ja) * 1990-08-10 1992-03-26 Sharp Corp 半導体記憶装置の基板バイアス発生回路
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
JPH04129264A (ja) * 1990-09-20 1992-04-30 Fujitsu Ltd 半導体集積回路
US5081429A (en) * 1991-03-29 1992-01-14 Codex Corp. Voltage controlled oscillator with controlled load
FR2677771A1 (fr) * 1991-06-17 1992-12-18 Samsung Electronics Co Ltd Circuit de detection de niveau de polarisation inverse dans un dispositif de memoire a semiconducteurs.
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
US5295095A (en) * 1991-08-22 1994-03-15 Lattice Semiconductor Corporation Method of programming electrically erasable programmable read-only memory using particular substrate bias
JP2998944B2 (ja) * 1991-12-19 2000-01-17 シャープ株式会社 リングオシレータ
US5412257A (en) * 1992-10-20 1995-05-02 United Memories, Inc. High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump
JP2605565B2 (ja) * 1992-11-27 1997-04-30 日本電気株式会社 半導体集積回路
US5446367A (en) * 1993-05-25 1995-08-29 Micron Semiconductor, Inc. Reducing current supplied to an integrated circuit
US5418751A (en) * 1993-09-29 1995-05-23 Texas Instruments Incorporated Variable frequency oscillator controlled EEPROM charge pump
US5365204A (en) * 1993-10-29 1994-11-15 International Business Machines Corporation CMOS voltage controlled ring oscillator
JP3144491B2 (ja) * 1995-03-09 2001-03-12 マクロニクス インターナショナル カンパニイ リミテッド 直列コンデンサ昇圧回路
FR2773019B1 (fr) * 1997-12-24 2001-10-12 Sgs Thomson Microelectronics Dispositif de generation d'une impulsion de tension
JP2000069603A (ja) * 1998-08-24 2000-03-03 Mitsubishi Heavy Ind Ltd バッテリ車両の回生制動装置
US6933769B2 (en) * 2003-08-26 2005-08-23 Micron Technology, Inc. Bandgap reference circuit
US7719343B2 (en) * 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US7888962B1 (en) 2004-07-07 2011-02-15 Cypress Semiconductor Corporation Impedance matching circuit
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US8036846B1 (en) 2005-10-20 2011-10-11 Cypress Semiconductor Corporation Variable impedance sense architecture and method
JP2011528870A (ja) * 2008-07-18 2011-11-24 ペレグリン セミコンダクター コーポレーション 低ノイズ高効率バイアス生成回路及び方法
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US8816659B2 (en) 2010-08-06 2014-08-26 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9264053B2 (en) 2011-01-18 2016-02-16 Peregrine Semiconductor Corporation Variable frequency charge pump
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806741A (en) * 1972-05-17 1974-04-23 Standard Microsyst Smc Self-biasing technique for mos substrate voltage
US4030084A (en) * 1975-11-28 1977-06-14 Honeywell Information Systems, Inc. Substrate bias voltage generated from refresh oscillator
US4115710A (en) * 1976-12-27 1978-09-19 Texas Instruments Incorporated Substrate bias for MOS integrated circuit
US4142114A (en) * 1977-07-18 1979-02-27 Mostek Corporation Integrated circuit with threshold regulation
US4208595A (en) * 1978-10-24 1980-06-17 International Business Machines Corporation Substrate generator
EP0015342B1 (de) * 1979-03-05 1984-01-25 Motorola, Inc. Substrat-Vorspannungsregler

Also Published As

Publication number Publication date
EP0032588B1 (de) 1986-04-23
US4388537A (en) 1983-06-14
EP0032588A2 (de) 1981-07-29
JPH0114712B2 (de) 1989-03-14
JPS5694654A (en) 1981-07-31
EP0032588A3 (en) 1981-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee