DE3070336D1 - Photoelectric device - Google Patents

Photoelectric device

Info

Publication number
DE3070336D1
DE3070336D1 DE8080304022T DE3070336T DE3070336D1 DE 3070336 D1 DE3070336 D1 DE 3070336D1 DE 8080304022 T DE8080304022 T DE 8080304022T DE 3070336 T DE3070336 T DE 3070336T DE 3070336 D1 DE3070336 D1 DE 3070336D1
Authority
DE
Germany
Prior art keywords
photoelectric device
photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080304022T
Other languages
German (de)
English (en)
Inventor
Yukio Takasaki
Tadaaki Hirai
Hideaki Yamamoto
Toshihisa Tsukada
Yoshiaki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3070336D1 publication Critical patent/DE3070336D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
DE8080304022T 1979-11-14 1980-11-11 Photoelectric device Expired DE3070336D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14657979A JPS5670673A (en) 1979-11-14 1979-11-14 Photoelectric converter

Publications (1)

Publication Number Publication Date
DE3070336D1 true DE3070336D1 (en) 1985-04-25

Family

ID=15410880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080304022T Expired DE3070336D1 (en) 1979-11-14 1980-11-11 Photoelectric device

Country Status (5)

Country Link
US (1) US4429325A (https=)
EP (1) EP0029679B1 (https=)
JP (1) JPS5670673A (https=)
CA (1) CA1162279A (https=)
DE (1) DE3070336D1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157075A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Photoelectric transducing device
DE3124810A1 (de) * 1981-06-24 1983-01-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen amorpher selenschichten mit und ohne dotierende zusaetze, sowie eine durch das verfahren hergestellte oberflaechenschicht einer fotoleitertrommel
JPS5821875A (ja) * 1981-07-31 1983-02-08 Seiko Epson Corp イメ−ジセンサ
JPS5848578A (ja) * 1981-09-17 1983-03-22 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS5890769A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 積層半導体装置
JPS5945781A (ja) * 1982-09-09 1984-03-14 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59108457A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
DD227311A1 (de) * 1984-09-17 1985-09-11 Adw Ddr Optoelektronischer festkoerperschalter
US5101255A (en) * 1987-01-14 1992-03-31 Sachio Ishioka Amorphous photoelectric conversion device with avalanche
JP2001284628A (ja) * 2000-03-29 2001-10-12 Shindengen Electric Mfg Co Ltd Ｘ線検出装置
JP2005012049A (ja) * 2003-06-20 2005-01-13 Shimadzu Corp 放射線検出器およびそれを備えた放射線撮像装置
JP2005019543A (ja) * 2003-06-24 2005-01-20 Shimadzu Corp 二次元半導体検出器および二次元撮像装置
US7615731B2 (en) * 2006-09-14 2009-11-10 Carestream Health, Inc. High fill-factor sensor with reduced coupling

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419127B2 (https=) 1974-06-21 1979-07-12
FR2366698A1 (fr) * 1976-09-29 1978-04-28 Hitachi Ltd Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images
US4236829A (en) 1978-01-31 1980-12-02 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor
JPS5846066B2 (ja) * 1978-01-31 1983-10-14 松下電器産業株式会社 光電変換装置
FR2433871A1 (fr) 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4233514A (en) * 1978-12-14 1980-11-11 General Electric Company Solid state radiation detector and arrays thereof
JPS56103578A (en) * 1980-01-23 1981-08-18 Hitachi Ltd Solid state pickup element

Also Published As

Publication number Publication date
JPS5670673A (en) 1981-06-12
EP0029679A3 (en) 1982-04-28
CA1162279A (en) 1984-02-14
EP0029679A2 (en) 1981-06-03
US4429325A (en) 1984-01-31
EP0029679B1 (en) 1985-03-20
JPS6315750B2 (https=) 1988-04-06

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee