DE3069594D1 - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
DE3069594D1
DE3069594D1 DE8080104118T DE3069594T DE3069594D1 DE 3069594 D1 DE3069594 D1 DE 3069594D1 DE 8080104118 T DE8080104118 T DE 8080104118T DE 3069594 T DE3069594 T DE 3069594T DE 3069594 D1 DE3069594 D1 DE 3069594D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080104118T
Other languages
English (en)
Inventor
Makoto Matsui
Yasuhiro Shiraki
Yoshifumi Katayama
Toshihisa Tsukada
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3069594D1 publication Critical patent/DE3069594D1/de
Expired legal-status Critical Current

Links

Classifications

    • H01L29/66757
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02441Group 14 semiconducting materials
    • H01L21/0245Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • H01L27/12
    • H01L27/14643
    • H01L27/14665
    • H01L29/04
    • H01L29/78675
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/169Vacuum deposition, e.g. including molecular beam epitaxy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/909Controlled atmosphere

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal Display Device Control (AREA)
DE8080104118T 1979-07-20 1980-07-15 Semiconductor device and method of manufacturing the same Expired DE3069594D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9156679A JPS5617083A (en) 1979-07-20 1979-07-20 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
DE3069594D1 true DE3069594D1 (en) 1984-12-13

Family

ID=14030057

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080104118T Expired DE3069594D1 (en) 1979-07-20 1980-07-15 Semiconductor device and method of manufacturing the same

Country Status (4)

Country Link
US (1) US4351856A (de)
EP (1) EP0023021B1 (de)
JP (1) JPS5617083A (de)
DE (1) DE3069594D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717174A (en) * 1980-07-03 1982-01-28 Hitachi Ltd Semiconductor device
JPS57133082A (en) * 1981-02-12 1982-08-17 Oki Electric Ind Co Ltd Wire dot printer
JPS5831575A (ja) * 1981-08-19 1983-02-24 Hitachi Ltd 多結晶薄膜トランジスタ
EP0073603B1 (de) * 1981-08-19 1987-08-26 Hitachi, Ltd. Polykristalliner Dünnfilmtransistor und integrierte Schaltung mit solchen Transistoren und eine Anzeigevorrichtung die eine solche Schaltung enthält
JPS5922365A (ja) * 1982-07-28 1984-02-04 Hitachi Ltd 多結晶薄膜トランジスタ
JPS5856348A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の形成方法
DE3146981A1 (de) * 1981-11-26 1983-06-01 Siemens AG, 1000 Berlin und 8000 München Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb.
JPS58192375A (ja) * 1982-05-07 1983-11-09 Hitachi Ltd 薄膜トランジスタの製造方法
JPS58197775A (ja) * 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
JPH0658966B2 (ja) * 1982-05-17 1994-08-03 キヤノン株式会社 半導体素子
DE3331601C2 (de) * 1982-09-02 1987-04-30 Canon K.K., Tokio/Tokyo Halbleiterbauelement
JPS5952872A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd 受光装置
GB2130009B (en) * 1982-11-12 1986-04-03 Rca Corp Polycrystalline silicon layers for semiconductor devices
EP0178447B1 (de) * 1984-10-09 1993-02-17 Fujitsu Limited Verfahren zur Herstellung einer auf der Halbleiter-auf-Isolator-Technologie basierenden integrierten Schaltung
GB2174108B (en) * 1985-04-04 1989-07-19 Sharp Kk Method for forming a polycrystalline silicon thin film
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
JP2560716B2 (ja) * 1987-03-25 1996-12-04 株式会社日本自動車部品総合研究所 半導体素子及びその製造方法
JPS6476760A (en) * 1987-09-18 1989-03-22 Toshiba Corp Manufacture of semiconductor device
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same
JPH07187892A (ja) * 1991-06-28 1995-07-25 Internatl Business Mach Corp <Ibm> シリコン及びその形成方法
US5268208A (en) * 1991-07-01 1993-12-07 Ford Motor Company Plasma enhanced chemical vapor deposition of oxide film stack
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US5512375A (en) * 1993-10-14 1996-04-30 Intevac, Inc. Pseudomorphic substrates
JP4085459B2 (ja) 1998-03-02 2008-05-14 セイコーエプソン株式会社 3次元デバイスの製造方法
JP4019305B2 (ja) * 2001-07-13 2007-12-12 セイコーエプソン株式会社 薄膜装置の製造方法
CN103449739B (zh) * 2012-05-31 2017-04-05 深圳富泰宏精密工业有限公司 玻璃基体的表面处理方法及制品

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082124A (en) * 1959-08-03 1963-03-19 Beckman Instruments Inc Method of making thin layer semiconductor devices
US3463667A (en) * 1965-12-03 1969-08-26 Kennecott Copper Corp Deposition of thin films
US3794516A (en) * 1970-12-15 1974-02-26 W Engeler Method for making high temperature low ohmic contact to silicon
US3892608A (en) * 1974-02-28 1975-07-01 Motorola Inc Method for filling grooves and moats used on semiconductor devices
JPS515967A (ja) * 1974-07-03 1976-01-19 Suwa Seikosha Kk Handotaisochi
US4179528A (en) * 1977-05-18 1979-12-18 Eastman Kodak Company Method of making silicon device with uniformly thick polysilicon
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film

Also Published As

Publication number Publication date
US4351856A (en) 1982-09-28
JPH0250630B2 (de) 1990-11-02
EP0023021A1 (de) 1981-01-28
JPS5617083A (en) 1981-02-18
EP0023021B1 (de) 1984-11-07

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