DE3068161D1 - Field-effect transistor with high cut-off frequency and method of making it - Google Patents
Field-effect transistor with high cut-off frequency and method of making itInfo
- Publication number
- DE3068161D1 DE3068161D1 DE8080400343T DE3068161T DE3068161D1 DE 3068161 D1 DE3068161 D1 DE 3068161D1 DE 8080400343 T DE8080400343 T DE 8080400343T DE 3068161 T DE3068161 T DE 3068161T DE 3068161 D1 DE3068161 D1 DE 3068161D1
- Authority
- DE
- Germany
- Prior art keywords
- frequency
- making
- field
- effect transistor
- high cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7907803A FR2452791A1 (fr) | 1979-03-28 | 1979-03-28 | Transistor a effet de champ a frequence de coupure elevee |
FR7922301A FR2465317A2 (fr) | 1979-03-28 | 1979-09-06 | Transistor a effet de champ a frequence de coupure elevee |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3068161D1 true DE3068161D1 (en) | 1984-07-19 |
Family
ID=26221079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080400343T Expired DE3068161D1 (en) | 1979-03-28 | 1980-03-14 | Field-effect transistor with high cut-off frequency and method of making it |
Country Status (5)
Country | Link |
---|---|
US (1) | US4471366A (de) |
EP (1) | EP0017531B1 (de) |
JP (1) | JPS55160473A (de) |
DE (1) | DE3068161D1 (de) |
FR (1) | FR2465317A2 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2913068A1 (de) * | 1979-04-02 | 1980-10-23 | Max Planck Gesellschaft | Heterostruktur-halbleiterkoerper und verwendung hierfuer |
FR2469002A1 (fr) * | 1979-10-26 | 1981-05-08 | Thomson Csf | Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur |
JPS5953714B2 (ja) * | 1979-12-28 | 1984-12-26 | 富士通株式会社 | 半導体装置 |
EP0317993A1 (de) * | 1979-12-28 | 1989-05-31 | Fujitsu Limited | Halbleiteranordnung mit Heteroübergängen |
CA1145482A (en) * | 1979-12-28 | 1983-04-26 | Takashi Mimura | High electron mobility single heterojunction semiconductor device |
USRE33584E (en) * | 1979-12-28 | 1991-05-07 | Fujitsu Limited | High electron mobility single heterojunction semiconductor devices |
JPS56157068A (en) * | 1980-05-08 | 1981-12-04 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
FR2489045A1 (fr) * | 1980-08-20 | 1982-02-26 | Thomson Csf | Transistor a effet de champ gaas a memoire non volatile |
FR2497603A1 (fr) * | 1981-01-06 | 1982-07-09 | Thomson Csf | Transistor a faible temps de commutation, de type normalement bloquant |
US4663643A (en) * | 1981-04-23 | 1987-05-05 | Fujitsu Limited | Semiconductor device and process for producing the same |
EP0067721B1 (de) * | 1981-06-17 | 1989-04-26 | Hitachi, Ltd. | Halbleiteranordnung mit Heteroübergängen |
JPS5891682A (ja) * | 1981-11-27 | 1983-05-31 | Hitachi Ltd | 半導体装置 |
JPS58119671A (ja) * | 1982-01-09 | 1983-07-16 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
JPS58178572A (ja) * | 1982-04-14 | 1983-10-19 | Hiroyuki Sakaki | 移動度変調形電界効果トランジスタ |
JPS59168677A (ja) * | 1983-03-14 | 1984-09-22 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPS6012774A (ja) * | 1983-07-02 | 1985-01-23 | Agency Of Ind Science & Technol | 半導体素子の製造方法 |
JP2621854B2 (ja) * | 1985-05-31 | 1997-06-18 | 株式会社東芝 | 高移動度トランジスタ |
DE3535002A1 (de) * | 1985-10-01 | 1987-04-02 | Telefunken Electronic Gmbh | Sperrschicht-feldeffekttransistor |
JP2716136B2 (ja) * | 1988-01-14 | 1998-02-18 | 日本電気株式会社 | 半導体装置 |
US5060031A (en) * | 1990-09-18 | 1991-10-22 | Motorola, Inc | Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices |
US6316793B1 (en) | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
US6548333B2 (en) | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
US20030201459A1 (en) * | 2001-03-29 | 2003-10-30 | Sheppard Scott Thomas | Nitride based transistors on semi-insulating silicon carbide substrates |
US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
US6982204B2 (en) * | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
JP4050128B2 (ja) * | 2002-10-24 | 2008-02-20 | 松下電器産業株式会社 | ヘテロ接合電界効果型トランジスタ及びその製造方法 |
US7112830B2 (en) * | 2002-11-25 | 2006-09-26 | Apa Enterprises, Inc. | Super lattice modification of overlying transistor |
US7901994B2 (en) * | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7084441B2 (en) * | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US20060017064A1 (en) * | 2004-07-26 | 2006-01-26 | Saxler Adam W | Nitride-based transistors having laterally grown active region and methods of fabricating same |
US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US7355215B2 (en) * | 2004-12-06 | 2008-04-08 | Cree, Inc. | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies |
US7161194B2 (en) * | 2004-12-06 | 2007-01-09 | Cree, Inc. | High power density and/or linearity transistors |
US7465967B2 (en) | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
US7626217B2 (en) * | 2005-04-11 | 2009-12-01 | Cree, Inc. | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
US8575651B2 (en) | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
US7544963B2 (en) * | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
US7615774B2 (en) * | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US9331192B2 (en) * | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US7709269B2 (en) | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50138776A (de) * | 1974-04-17 | 1975-11-05 | ||
US4160261A (en) * | 1978-01-13 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Mis heterojunction structures |
US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
-
1979
- 1979-09-06 FR FR7922301A patent/FR2465317A2/fr active Granted
-
1980
- 1980-03-14 DE DE8080400343T patent/DE3068161D1/de not_active Expired
- 1980-03-14 EP EP80400343A patent/EP0017531B1/de not_active Expired
- 1980-03-28 JP JP4013280A patent/JPS55160473A/ja active Granted
-
1982
- 1982-03-01 US US06/353,100 patent/US4471366A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0017531A1 (de) | 1980-10-15 |
JPS55160473A (en) | 1980-12-13 |
JPH0435904B2 (de) | 1992-06-12 |
EP0017531B1 (de) | 1984-06-13 |
FR2465317A2 (fr) | 1981-03-20 |
FR2465317B2 (de) | 1983-03-04 |
US4471366A (en) | 1984-09-11 |
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