DE3044434A1 - Resistaufbau auf einem substrat sowie verfahren zum entwerfen eines musters in diesem - Google Patents

Resistaufbau auf einem substrat sowie verfahren zum entwerfen eines musters in diesem

Info

Publication number
DE3044434A1
DE3044434A1 DE19803044434 DE3044434A DE3044434A1 DE 3044434 A1 DE3044434 A1 DE 3044434A1 DE 19803044434 DE19803044434 DE 19803044434 DE 3044434 A DE3044434 A DE 3044434A DE 3044434 A1 DE3044434 A1 DE 3044434A1
Authority
DE
Germany
Prior art keywords
resist
resist material
layer
lower layer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19803044434
Other languages
German (de)
English (en)
Inventor
Richard Edwin 07733 Holmdel N.J. Howard
Evelyn Lynn 08873 Somerset N.J. Hu
Lawrence David 07733 Holmdell N.J. Jackel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE3044434A1 publication Critical patent/DE3044434A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19803044434 1979-11-27 1980-11-26 Resistaufbau auf einem substrat sowie verfahren zum entwerfen eines musters in diesem Ceased DE3044434A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9780979A 1979-11-27 1979-11-27

Publications (1)

Publication Number Publication Date
DE3044434A1 true DE3044434A1 (de) 1981-08-27

Family

ID=22265225

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803044434 Ceased DE3044434A1 (de) 1979-11-27 1980-11-26 Resistaufbau auf einem substrat sowie verfahren zum entwerfen eines musters in diesem

Country Status (6)

Country Link
JP (1) JPS5691428A (enrdf_load_stackoverflow)
CA (1) CA1155238A (enrdf_load_stackoverflow)
DE (1) DE3044434A1 (enrdf_load_stackoverflow)
FR (1) FR2470402B1 (enrdf_load_stackoverflow)
GB (1) GB2064152B (enrdf_load_stackoverflow)
NL (1) NL8006438A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3131031A1 (de) * 1981-08-05 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen der felddotierung beim herstellen von integrierten komplementaeren mos-feldeffekttransistoren
DE102006050363A1 (de) 2006-10-25 2008-04-30 Advanced Mask Technology Center Gmbh & Co. Kg Verfahren zur Herstellung einer Fotomaske, Verfahren zur Strukturierung einer Schicht oder eines Schichtstapels und Resiststapel auf einem Maskensubstrat

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139922A (en) * 1987-04-10 1992-08-18 Matsushita Electronics Corporation Method of making resist pattern

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1622302A1 (de) * 1968-02-01 1970-10-29 Telefunken Patent Verfahren zum photographischen UEbertragen von Strukturen auf Halbleiterkoerper
JPS51129190A (en) * 1975-05-02 1976-11-10 Fujitsu Ltd Manufacturing method of semiconductor
US4024293A (en) * 1975-12-10 1977-05-17 International Business Machines Corporation High sensitivity resist system for lift-off metallization
JPS5387668A (en) * 1977-01-13 1978-08-02 Toshiba Corp Forming method of patterns
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Chang. T.H.P. et. al.: Grundlagen und Technik der Elektronenstrahl- Lithografie. In: Elektronik 1977, H. 8, S. 51-60 *
Feng, B.C. et.al.: Fabrication of Devices by an Improved Photolithographic Method. In: IBM TDB, Bd. 21, Nr. 6, Nov. 1978, S. 2325-2326 *
Lessor, R.A. et.al.: Negative E-Beam Lift-Off process. In: IBM TDB, Bd. 20, Nr. 11B, April 1978,S. 4765-4766 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3131031A1 (de) * 1981-08-05 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen der felddotierung beim herstellen von integrierten komplementaeren mos-feldeffekttransistoren
DE102006050363A1 (de) 2006-10-25 2008-04-30 Advanced Mask Technology Center Gmbh & Co. Kg Verfahren zur Herstellung einer Fotomaske, Verfahren zur Strukturierung einer Schicht oder eines Schichtstapels und Resiststapel auf einem Maskensubstrat
US7820343B2 (en) 2006-10-25 2010-10-26 Advanced Mask Technology Center Gmbh & Co. Kg Method for producing a photomask, method for patterning a layer or layer stack and resist stack on a mask substrate
DE102006050363B4 (de) 2006-10-25 2018-08-16 Advanced Mask Technology Center Gmbh & Co. Kg Verfahren zur Herstellung einer Fotomaske, Verfahren zur Strukturierung einer Schicht oder eines Schichtstapels und Resiststapel auf einem Maskensubstrat

Also Published As

Publication number Publication date
JPS5691428A (en) 1981-07-24
CA1155238A (en) 1983-10-11
FR2470402B1 (fr) 1987-03-20
FR2470402A1 (fr) 1981-05-29
NL8006438A (nl) 1981-07-01
JPH0468769B2 (enrdf_load_stackoverflow) 1992-11-04
GB2064152B (en) 1984-02-08
GB2064152A (en) 1981-06-10

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

8110 Request for examination paragraph 44
8131 Rejection