DE3040031C2 - - Google Patents
Info
- Publication number
- DE3040031C2 DE3040031C2 DE3040031A DE3040031A DE3040031C2 DE 3040031 C2 DE3040031 C2 DE 3040031C2 DE 3040031 A DE3040031 A DE 3040031A DE 3040031 A DE3040031 A DE 3040031A DE 3040031 C2 DE3040031 C2 DE 3040031C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- recording material
- photoconductive layer
- photoconductive
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13723879A JPS5662254A (en) | 1979-10-24 | 1979-10-24 | Electrophotographic imaging material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3040031A1 DE3040031A1 (de) | 1981-05-07 |
| DE3040031C2 true DE3040031C2 (en:Method) | 1987-06-19 |
Family
ID=15193994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803040031 Granted DE3040031A1 (de) | 1979-10-24 | 1980-10-23 | Bilderzeugungselement fuer elektrophotographische zwecke |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4818656A (en:Method) |
| JP (1) | JPS5662254A (en:Method) |
| DE (1) | DE3040031A1 (en:Method) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629977B2 (ja) * | 1981-06-08 | 1994-04-20 | 株式会社半導体エネルギー研究所 | 電子写真用感光体 |
| DE3249030T1 (de) * | 1981-09-26 | 1983-12-01 | Konishiroku Photo Industry Co., Ltd., Tokyo | Halbleitermaterial und verfahren zu dessen herstellung |
| US4536460A (en) * | 1981-11-09 | 1985-08-20 | Canon Kabushiki Kaisha | Photoconductive member |
| US4460669A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, U or D and dopant |
| US4460670A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, N or O and dopant |
| US4465750A (en) * | 1981-12-22 | 1984-08-14 | Canon Kabushiki Kaisha | Photoconductive member with a -Si having two layer regions |
| JPS59193463A (ja) * | 1983-04-18 | 1984-11-02 | Canon Inc | 電子写真用光導電部材 |
| JPH0627948B2 (ja) * | 1983-07-15 | 1994-04-13 | キヤノン株式会社 | 光導電部材 |
| JPS6022131A (ja) * | 1983-07-18 | 1985-02-04 | Canon Inc | 電子写真用光導電部材 |
| US5166018A (en) * | 1985-09-13 | 1992-11-24 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| JPS62220961A (ja) * | 1986-03-20 | 1987-09-29 | Minolta Camera Co Ltd | 感光体 |
| EP0238095A1 (en) * | 1986-03-20 | 1987-09-23 | Minolta Camera Kabushiki Kaisha | Photosensitive member composed of charge transporting layer and charge generating layer |
| JPS62220959A (ja) * | 1986-03-20 | 1987-09-29 | Minolta Camera Co Ltd | 感光体 |
| EP0241032A3 (en) * | 1986-04-09 | 1989-11-23 | Minolta Camera Kabushiki Kaisha | Photosensitive member composed of charge transporting layer and charge generating layer |
| US4950571A (en) * | 1986-04-09 | 1990-08-21 | Minolta Camera Kabushiki Kaisha | Photosensitive member composed of charge transporting layer and charge generating layer |
| DE3751651T2 (de) * | 1986-10-14 | 1996-10-17 | Minolta Camera Kk | Elektrophotographisches lichtempfindliches Element, das einen Überzug enthält |
| US5000831A (en) * | 1987-03-09 | 1991-03-19 | Minolta Camera Kabushiki Kaisha | Method of production of amorphous hydrogenated carbon layer |
| US4886724A (en) * | 1987-03-09 | 1989-12-12 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an overcoat layer and process for manufacturing the same |
| US4891291A (en) * | 1987-03-09 | 1990-01-02 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an amorphous carbon overcoat layer |
| US4891292A (en) * | 1987-03-09 | 1990-01-02 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an amorphous carbon overcoat layer |
| US4994337A (en) * | 1987-06-17 | 1991-02-19 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an overcoat layer |
| US4939056A (en) * | 1987-09-25 | 1990-07-03 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
| JPH01227161A (ja) * | 1988-03-07 | 1989-09-11 | Minolta Camera Co Ltd | 感光体及びその製造方法 |
| JPH0572783A (ja) * | 1991-04-12 | 1993-03-26 | Fuji Xerox Co Ltd | 電子写真感光体 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2056013B2 (de) * | 1969-11-14 | 1974-03-21 | Canon K.K., Tokio | Verfahren zur Herstellung einer fotoleitfähigen Schicht |
| DE2746967C2 (de) * | 1977-10-19 | 1981-09-24 | Siemens AG, 1000 Berlin und 8000 München | Elektrofotographische Aufzeichnungstrommel |
| AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
-
1979
- 1979-10-24 JP JP13723879A patent/JPS5662254A/ja active Granted
-
1980
- 1980-10-23 DE DE19803040031 patent/DE3040031A1/de active Granted
-
1988
- 1988-05-24 US US07/198,729 patent/US4818656A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0114579B2 (en:Method) | 1989-03-13 |
| US4818656A (en) | 1989-04-04 |
| DE3040031A1 (de) | 1981-05-07 |
| JPS5662254A (en) | 1981-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |