DE3027332A1 - Widerstand fuer integrierte schaltungen - Google Patents
Widerstand fuer integrierte schaltungenInfo
- Publication number
- DE3027332A1 DE3027332A1 DE19803027332 DE3027332A DE3027332A1 DE 3027332 A1 DE3027332 A1 DE 3027332A1 DE 19803027332 DE19803027332 DE 19803027332 DE 3027332 A DE3027332 A DE 3027332A DE 3027332 A1 DE3027332 A1 DE 3027332A1
- Authority
- DE
- Germany
- Prior art keywords
- resistance
- substrate
- semiconductor
- resistor
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract 4
- 239000004065 semiconductor Substances 0.000 claims description 50
- 238000006073 displacement reaction Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005755 formation reaction Methods 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100390736 Danio rerio fign gene Proteins 0.000 description 1
- 101100390738 Mus musculus Fign gene Proteins 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9155879A JPS5617052A (en) | 1979-07-20 | 1979-07-20 | Semiconductor resistor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3027332A1 true DE3027332A1 (de) | 1981-02-05 |
Family
ID=14029830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803027332 Withdrawn DE3027332A1 (de) | 1979-07-20 | 1980-07-18 | Widerstand fuer integrierte schaltungen |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5617052A (enrdf_load_stackoverflow) |
| DE (1) | DE3027332A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0298574A1 (en) * | 1987-07-10 | 1989-01-11 | Koninklijke Philips Electronics N.V. | Linear integrated resistor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182918A (ja) * | 1982-04-21 | 1983-10-26 | Toshiba Corp | 電圧分圧回路 |
| JPS58224668A (ja) * | 1982-06-21 | 1983-12-27 | Sukeroku Shokuhin Kk | いかの束根部を主原料とする加工食品およびそれの製造方法 |
-
1979
- 1979-07-20 JP JP9155879A patent/JPS5617052A/ja active Granted
-
1980
- 1980-07-18 DE DE19803027332 patent/DE3027332A1/de not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0298574A1 (en) * | 1987-07-10 | 1989-01-11 | Koninklijke Philips Electronics N.V. | Linear integrated resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6246985B2 (enrdf_load_stackoverflow) | 1987-10-06 |
| JPS5617052A (en) | 1981-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAR | Request for search filed | ||
| OC | Search report available | ||
| 8128 | New person/name/address of the agent |
Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE |
|
| 8141 | Disposal/no request for examination |