DE3023165C2 - - Google Patents
Info
- Publication number
- DE3023165C2 DE3023165C2 DE19803023165 DE3023165A DE3023165C2 DE 3023165 C2 DE3023165 C2 DE 3023165C2 DE 19803023165 DE19803023165 DE 19803023165 DE 3023165 A DE3023165 A DE 3023165A DE 3023165 C2 DE3023165 C2 DE 3023165C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- solar cell
- aluminum
- base
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000002985 plastic film Substances 0.000 claims description 2
- 229920006255 plastic film Polymers 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803023165 DE3023165A1 (de) | 1980-06-20 | 1980-06-20 | Solarzelle aus amorphem silizium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803023165 DE3023165A1 (de) | 1980-06-20 | 1980-06-20 | Solarzelle aus amorphem silizium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3023165A1 DE3023165A1 (de) | 1982-01-07 |
| DE3023165C2 true DE3023165C2 (fr) | 1991-05-29 |
Family
ID=6105065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803023165 Granted DE3023165A1 (de) | 1980-06-20 | 1980-06-20 | Solarzelle aus amorphem silizium |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3023165A1 (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4419533A (en) * | 1982-03-03 | 1983-12-06 | Energy Conversion Devices, Inc. | Photovoltaic device having incident radiation directing means for total internal reflection |
| US4554727A (en) * | 1982-08-04 | 1985-11-26 | Exxon Research & Engineering Company | Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces |
| EP0103168A3 (fr) * | 1982-09-10 | 1986-07-02 | Hitachi, Ltd. | Pile solaire en silicium amorphe |
| US4532537A (en) * | 1982-09-27 | 1985-07-30 | Rca Corporation | Photodetector with enhanced light absorption |
| US4663188A (en) * | 1982-09-27 | 1987-05-05 | Rca Corporation | Method for making a photodetector with enhanced light absorption |
| DE8232497U1 (de) * | 1982-11-19 | 1986-01-30 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem Silizium |
| DE8232492U1 (de) * | 1982-11-19 | 1986-03-27 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem Silizium |
| US4514583A (en) * | 1983-11-07 | 1985-04-30 | Energy Conversion Devices, Inc. | Substrate for photovoltaic devices |
| DE3528087C2 (de) * | 1984-08-06 | 1995-02-09 | Showa Aluminum Corp | Substrat für Solarzellen aus amorphem Silicium |
| DE3626450A1 (de) * | 1986-08-05 | 1988-02-11 | Hans Joachim Dipl P Kirschning | Als solarzelle wirkendes bauteil von bauwerken und gebaeuden |
| DE102009033771A1 (de) * | 2009-07-17 | 2011-04-07 | Schünemann, Gerhard | Solarreflektor zur Leistungssteigerung von Photovoltaikanlagen und Verwendung eines solchen Solarreflektors |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2631880A1 (de) * | 1975-07-18 | 1977-03-31 | Futaba Denshi Kogyo Kk | Halbleiterbauelement mit schottky- sperrschicht und verfahren zu seiner herstellung |
| IT1092849B (it) * | 1977-03-28 | 1985-07-12 | Rca Corp | Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento |
| DE2715471A1 (de) * | 1977-04-06 | 1978-10-19 | Siemens Ag | Solarzelle |
| US4166880A (en) * | 1978-01-18 | 1979-09-04 | Solamat Incorporated | Solar energy device |
| US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
-
1980
- 1980-06-20 DE DE19803023165 patent/DE3023165A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3023165A1 (de) | 1982-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8120 | Willingness to grant licenses paragraph 23 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |