DE3021140C2 - Verfahren zur Herstellung von Kühlblöcken für Halbleiterlaser und Halbleiterlaser mit einem nach diesem Verfahren hergestellten Kühlblock - Google Patents

Verfahren zur Herstellung von Kühlblöcken für Halbleiterlaser und Halbleiterlaser mit einem nach diesem Verfahren hergestellten Kühlblock

Info

Publication number
DE3021140C2
DE3021140C2 DE3021140A DE3021140A DE3021140C2 DE 3021140 C2 DE3021140 C2 DE 3021140C2 DE 3021140 A DE3021140 A DE 3021140A DE 3021140 A DE3021140 A DE 3021140A DE 3021140 C2 DE3021140 C2 DE 3021140C2
Authority
DE
Germany
Prior art keywords
cooling
laser element
cooling block
attached
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3021140A
Other languages
German (de)
English (en)
Other versions
DE3021140A1 (de
Inventor
Anthony Hendrik Deunhouwer
Henrikus Gerardus Eindhoven Kock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3021140A1 publication Critical patent/DE3021140A1/de
Application granted granted Critical
Publication of DE3021140C2 publication Critical patent/DE3021140C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49787—Obtaining plural composite product pieces from preassembled workpieces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4981—Utilizing transitory attached element or associated separate material
    • Y10T29/49812—Temporary protective coating, impregnation, or cast layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE3021140A 1979-06-11 1980-06-04 Verfahren zur Herstellung von Kühlblöcken für Halbleiterlaser und Halbleiterlaser mit einem nach diesem Verfahren hergestellten Kühlblock Expired DE3021140C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7904550,A NL180365C (nl) 1979-06-11 1979-06-11 Werkwijze voor het vervaardigen van koelblokken voor halfgeleiderlasers, alsmede halfgeleiderlaser die een volgens deze werkwijze vervaardigd koelblok bevat.

Publications (2)

Publication Number Publication Date
DE3021140A1 DE3021140A1 (de) 1981-01-08
DE3021140C2 true DE3021140C2 (de) 1985-01-17

Family

ID=19833324

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3021140A Expired DE3021140C2 (de) 1979-06-11 1980-06-04 Verfahren zur Herstellung von Kühlblöcken für Halbleiterlaser und Halbleiterlaser mit einem nach diesem Verfahren hergestellten Kühlblock

Country Status (8)

Country Link
US (1) US4348795A (OSRAM)
JP (2) JPS562695A (OSRAM)
CA (1) CA1143463A (OSRAM)
DE (1) DE3021140C2 (OSRAM)
FR (1) FR2458922A1 (OSRAM)
GB (1) GB2050896B (OSRAM)
IT (1) IT1131523B (OSRAM)
NL (1) NL180365C (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612453B2 (ja) * 1982-05-17 1994-02-16 積水フアインケミカル株式会社 光硬化性樹脂組成物
FR2531819A1 (fr) * 1982-08-12 1984-02-17 Demeure Loic Embase pour laser a semi-conducteur et son procede de fabrication
US4550333A (en) * 1983-09-13 1985-10-29 Xerox Corporation Light emitting semiconductor mount
JPH05173046A (ja) * 1991-12-20 1993-07-13 Sony Corp 光導波路装置
US5324387A (en) * 1993-05-07 1994-06-28 Xerox Corporation Method of fabricating asymmetric closely-spaced multiple diode lasers
JP2737625B2 (ja) * 1993-12-27 1998-04-08 日本電気株式会社 半導体レーザ装置
US20140143996A1 (en) * 2012-11-28 2014-05-29 Venkata Adiseshaiah Bhagavatula Methods of forming gradient index (grin) lens chips for optical connections and related fiber optic connectors
US9529155B2 (en) 2012-11-28 2016-12-27 Corning Optical Communications LLC Gradient index (GRIN) lens chips and associated small form factor optical arrays for optical connections, related fiber optic connectors
CN109332775B (zh) * 2018-11-27 2020-05-05 株洲钻石切削刀具股份有限公司 一种内冷三面刃铣刀

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2762954A (en) * 1950-09-09 1956-09-11 Sylvania Electric Prod Method for assembling transistors
US3165824A (en) * 1962-05-21 1965-01-19 Leach & Garner Co Method for producing jewelers' stock
NL301162A (OSRAM) * 1962-12-03
US3613228A (en) * 1969-07-02 1971-10-19 Ibm Manufacture of multielement magnetic head assemblies
US3685110A (en) * 1970-08-31 1972-08-22 George J J Randolph Jr Manufacture of piezoresistive bars
GB1500156A (en) * 1974-09-06 1978-02-08 Rca Corp Semiconductor injection laser
DE2542174C3 (de) * 1974-09-21 1980-02-14 Nippon Electric Co., Ltd., Tokio Halbleiterlaservorrichtung
US4268946A (en) * 1977-06-08 1981-05-26 Owens-Corning Fiberglas Corporation Method for finishing a plate

Also Published As

Publication number Publication date
NL180365C (nl) 1987-02-02
JPS611082A (ja) 1986-01-07
FR2458922B1 (OSRAM) 1981-12-04
NL7904550A (nl) 1980-12-15
JPS562695A (en) 1981-01-12
IT8022639A0 (it) 1980-06-06
JPS6237896B2 (OSRAM) 1987-08-14
US4348795A (en) 1982-09-14
GB2050896A (en) 1981-01-14
NL180365B (nl) 1986-09-01
IT1131523B (it) 1986-06-25
CA1143463A (en) 1983-03-22
GB2050896B (en) 1983-01-19
FR2458922A1 (fr) 1981-01-02
DE3021140A1 (de) 1981-01-08

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: NEHMZOW-DAVID, F., PAT.-ASS., 2000 HAMBURG

D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee