DE3015866A1 - Verfahren zum lithographischen herstellen von lochmasken - Google Patents

Verfahren zum lithographischen herstellen von lochmasken

Info

Publication number
DE3015866A1
DE3015866A1 DE19803015866 DE3015866A DE3015866A1 DE 3015866 A1 DE3015866 A1 DE 3015866A1 DE 19803015866 DE19803015866 DE 19803015866 DE 3015866 A DE3015866 A DE 3015866A DE 3015866 A1 DE3015866 A1 DE 3015866A1
Authority
DE
Germany
Prior art keywords
photomask
particles
photoresist
metal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19803015866
Other languages
German (de)
English (en)
Inventor
John Bartko
Phillip D Blais
Patrick E Felice
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE3015866A1 publication Critical patent/DE3015866A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19803015866 1979-04-24 1980-04-24 Verfahren zum lithographischen herstellen von lochmasken Withdrawn DE3015866A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3279779A 1979-04-24 1979-04-24

Publications (1)

Publication Number Publication Date
DE3015866A1 true DE3015866A1 (de) 1980-11-06

Family

ID=21866854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803015866 Withdrawn DE3015866A1 (de) 1979-04-24 1980-04-24 Verfahren zum lithographischen herstellen von lochmasken

Country Status (2)

Country Link
JP (1) JPS55149942A (enrdf_load_stackoverflow)
DE (1) DE3015866A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3069341D1 (en) * 1979-05-31 1984-11-08 Western Electric Co Accelerated particle lithographic processing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801390A (en) * 1970-12-28 1974-04-02 Bell Telephone Labor Inc Preparation of high resolution shadow masks

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801390A (en) * 1970-12-28 1974-04-02 Bell Telephone Labor Inc Preparation of high resolution shadow masks

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. Electrochem. Soc. 126/3, 1979, S. 483-490 *

Also Published As

Publication number Publication date
JPS6332178B2 (enrdf_load_stackoverflow) 1988-06-28
JPS55149942A (en) 1980-11-21

Similar Documents

Publication Publication Date Title
DE2628099C2 (de) Verfahren zum Herstellen einer Maske
DE2302116C3 (de) Vorrichtung zur Herstellung einer maskierenden Schicht auf einem Träger mit Hilfe von weichen Röntgenstrahlen
DE2506266A1 (de) Verfahren zum herstellen mikrominiaturisierter elektronischer bauelemente
DE2500907A1 (de) Vorsensibilisierte druckplatte mit in situ durch laserstrahlen erzeugbarer bildgemaesser maske
EP0203215A1 (de) Verfahren zur Reparatur von Transmissionsmasken
DE2429026A1 (de) Verfahren zum kopieren von duennfilmmustern auf einem substrat und vorrichtung zur durchfuehrung des verfahrens
EP0212054A2 (de) Verfahren zur Herstellung von Masken für die Röntgentiefenlithographie
DE3524176A1 (de) Lichtmaske und verfahren fuer ihre herstellung
DE69431698T2 (de) Einen Strahl schneller Atome verwendendes Verarbeitungsverfahren
CH621890A5 (enrdf_load_stackoverflow)
DE3015866A1 (de) Verfahren zum lithographischen herstellen von lochmasken
DE3853305T2 (de) Verfahren zur Herstellung von feinsten Strukturen in Lacken durch Elektronen- oder Röntgenstrahllithographie.
DE3027941A1 (de) Verfahren zum herstellen von reliefstrukturen aus doppellackschichten fuer integrierte halbleiterschaltungen, wobei zur strukturierung hochenergetische strahlung verwendet wird
DE2452326C2 (de) Verfahren zur Herstellung einer Ätzmaske mittels energiereicher Strahlung
DE3046629A1 (de) Verfahren zur herstellung von isolatoroberflaechen
DE2535156C3 (de) Verfahren zur Herstellung einer Schicht mit vorgegebenem Muster von Bereichen geringerer Schichtdicke und Verwendung der Schicht als Maske bei der Dotierung
DE2405880C3 (de) Verbundplatte, insbesondere zur Herstellung einer Druckplatte
DE2951376A1 (de) Verfahren zur erzeugung der kernspuren oder aus kernspuren hervorgehender mikroloescher eines einzelnen iones
DE2717400B1 (de) AEtzverfahren zur Herstellung von Strukturen unterschiedlicher Hoehe
DE2740366A1 (de) Verfahren und einrichtung zur herstellung sehr kleiner integrierter stromkreise
DE3417888A1 (de) Maskenstruktur fuer vakuum-ultraviolett-lithographie
DE2727646C2 (de) Verfahren zur Herstellung feiner Gitterstrukturen mit zwei sich kreuzenden Stegscharen und Verwendung
DE3035200C2 (de) Maske für die Ionenstrahl-Schattenprojektion
DE2021902A1 (de) Verfahren zum selektiven Durchloechern von Festkoerpern
DE4028647C2 (de) Verfahren zum Kopieren von Lochmasken

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8136 Disposal/non-payment of the fee for publication/grant
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: G03F0007260000

Ipc: G03F0001200000

R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: G03F0007000000

Ipc: G03F0001200000

Effective date: 20111216