DE2954368A1 - - Google Patents
Info
- Publication number
- DE2954368A1 DE2954368A1 DE19792954368 DE2954368A DE2954368A1 DE 2954368 A1 DE2954368 A1 DE 2954368A1 DE 19792954368 DE19792954368 DE 19792954368 DE 2954368 A DE2954368 A DE 2954368A DE 2954368 A1 DE2954368 A1 DE 2954368A1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93500978A | 1978-08-18 | 1978-08-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2954368A1 true DE2954368A1 (US20090177143A1-20090709-C00008.png) | 1984-07-12 |
| DE2954368C2 DE2954368C2 (de) | 1986-10-16 |
Family
ID=25466438
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2954368A Expired DE2954368C2 (de) | 1978-08-18 | 1979-05-11 | Verfahren zur kontinuierlichen Herstellung von hochreinem Silizium durch thermische Zersetzung von Tribromsilan |
| DE2919086A Expired DE2919086C2 (de) | 1978-08-18 | 1979-05-11 | Verfahren zur kontinuierlichen Herstellung von hochreinem Silizium durch thermische Zersetzung von Tribromsilan |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2919086A Expired DE2919086C2 (de) | 1978-08-18 | 1979-05-11 | Verfahren zur kontinuierlichen Herstellung von hochreinem Silizium durch thermische Zersetzung von Tribromsilan |
Country Status (6)
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4676967A (en) * | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
| US4374182A (en) * | 1980-07-07 | 1983-02-15 | Dow Corning Corporation | Preparation of silicon metal through polymer degradation |
| US4390510A (en) | 1982-02-16 | 1983-06-28 | General Electric Company | Process for treating spent silicon-containing reaction masses to produce halosilanes |
| JPS61101410A (ja) * | 1984-10-24 | 1986-05-20 | Hiroshi Ishizuka | 多結晶珪素の製造法及びそのための装置 |
| US4696834A (en) * | 1986-02-28 | 1987-09-29 | Dow Corning Corporation | Silicon-containing coatings and a method for their preparation |
| US4743344A (en) * | 1986-03-26 | 1988-05-10 | Union Carbide Corporation | Treatment of wastes from high purity silicon process |
| US4871524A (en) * | 1987-09-03 | 1989-10-03 | Ethyl Corporation | Hydrogen purification process |
| WO2006009456A2 (en) * | 2004-07-16 | 2006-01-26 | Institutt For Energiteknikk | Method and reactor for continuous production of semiconductor grade silicon |
| CN101460398B (zh) * | 2006-04-13 | 2012-08-29 | 卡伯特公司 | 通过闭合环路方法生产硅 |
| US7935327B2 (en) | 2006-08-30 | 2011-05-03 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
| US7656661B2 (en) * | 2007-07-31 | 2010-02-02 | Donald Shaum | Electronic apparatus with multiple data input modes |
| DE102008017304A1 (de) | 2008-03-31 | 2009-10-01 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Reinstsilizium |
| DE102009032833A1 (de) | 2009-07-08 | 2011-01-13 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Monosilan |
| DE102009037155B3 (de) | 2009-08-04 | 2010-11-04 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Trichlorsilan |
| DE102009037154B3 (de) | 2009-08-04 | 2010-12-09 | Schmid Silicon Technology Gmbh | Verfahren zur Herstellung von Monosilan |
| DE102010000981A1 (de) | 2010-01-18 | 2011-07-21 | Evonik Degussa GmbH, 45128 | Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium |
| DE102010034469A1 (de) | 2010-08-06 | 2012-02-09 | Schmid Silicon Technology Gmbh | Anlage zur Herstellung von Monosilan |
| US20120100061A1 (en) | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
| US8449848B2 (en) | 2010-10-22 | 2013-05-28 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems |
| CN107555438A (zh) * | 2010-10-22 | 2018-01-09 | Memc电子材料有限公司 | 在基本闭环的方法和系统中制备多晶硅 |
| DE102011089695A1 (de) | 2011-12-22 | 2013-06-27 | Schmid Silicon Technology Gmbh | Reaktor und Verfahren zur Herstellung von Reinstsilizium |
| DE102015203618A1 (de) | 2015-02-27 | 2016-09-01 | Schmid Silicon Technology Gmbh | Kolonne und Verfahren zur Disproportionierung von Chlorsilanen zu Monosilan und Tetrachlorsilan sowie Anlage zur Gewinnung von Monosilan |
| DE102015209008A1 (de) | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
| CN108883942A (zh) * | 2016-04-21 | 2018-11-23 | 株式会社德山 | 金属粉末的制造方法 |
| DE102019209898A1 (de) | 2019-07-04 | 2021-01-07 | Schmid Silicon Technology Gmbh | Vorrichtung und Verfahren zur Bildung von flüssigem Silizium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1047181B (de) * | 1957-09-07 | 1958-12-24 | Wacker Chemie Gmbh | Verfahren zur Herstellung von reinstem kristallisiertem Silicium |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2595620A (en) * | 1948-11-27 | 1952-05-06 | Union Carbide & Carbon Corp | Hydrogenation of halogenosilanes |
| BE554836A (US20090177143A1-20090709-C00008.png) * | 1956-02-11 | |||
| US3012861A (en) * | 1960-01-15 | 1961-12-12 | Du Pont | Production of silicon |
| GB1498266A (en) * | 1974-05-13 | 1978-01-18 | Texas Instruments Inc | Method of silicon production |
| DE2620739A1 (de) * | 1976-05-11 | 1977-12-01 | Wacker Chemitronic | Verfahren zur herstellung von hochreinem silicium |
| US4117094A (en) * | 1977-06-13 | 1978-09-26 | Texas Instruments Incorporated | Process for silicon and trichlorosilane production |
-
1979
- 1979-05-04 GB GB7915583A patent/GB2028289B/en not_active Expired
- 1979-05-11 DE DE2954368A patent/DE2954368C2/de not_active Expired
- 1979-05-11 DE DE2919086A patent/DE2919086C2/de not_active Expired
- 1979-05-15 CA CA000327660A patent/CA1145117A/en not_active Expired
- 1979-05-16 FR FR7912469A patent/FR2433479B1/fr not_active Expired
- 1979-05-17 JP JP5980079A patent/JPS5527890A/ja active Granted
- 1979-05-17 IT IT22753/79A patent/IT1193203B/it active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1047181B (de) * | 1957-09-07 | 1958-12-24 | Wacker Chemie Gmbh | Verfahren zur Herstellung von reinstem kristallisiertem Silicium |
Also Published As
| Publication number | Publication date |
|---|---|
| IT7922753A0 (it) | 1979-05-17 |
| DE2919086A1 (de) | 1980-03-06 |
| DE2919086C2 (de) | 1986-10-16 |
| DE2954368C2 (de) | 1986-10-16 |
| JPS6228083B2 (US20090177143A1-20090709-C00008.png) | 1987-06-18 |
| IT1193203B (it) | 1988-06-15 |
| CA1145117A (en) | 1983-04-26 |
| JPS5527890A (en) | 1980-02-28 |
| GB2028289B (en) | 1982-09-02 |
| FR2433479A1 (fr) | 1980-03-14 |
| GB2028289A (en) | 1980-03-05 |
| FR2433479B1 (fr) | 1985-10-18 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| Q172 | Divided out of (supplement): |
Ref country code: DE Ref document number: 2919086 |
|
| 8110 | Request for examination paragraph 44 | ||
| 8181 | Inventor (new situation) |
Free format text: WORNER, LLOYD M., CARLSBAD, CA., US MOORE, EDWARD B., CAPISTRANO BEACH, CA., US |
|
| AC | Divided out of |
Ref country code: DE Ref document number: 2919086 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |