DE2832154A1 - Halbleitervorrichtung mit isoliertem gate - Google Patents

Halbleitervorrichtung mit isoliertem gate

Info

Publication number
DE2832154A1
DE2832154A1 DE19782832154 DE2832154A DE2832154A1 DE 2832154 A1 DE2832154 A1 DE 2832154A1 DE 19782832154 DE19782832154 DE 19782832154 DE 2832154 A DE2832154 A DE 2832154A DE 2832154 A1 DE2832154 A1 DE 2832154A1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
semiconductor substrate
region
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782832154
Other languages
German (de)
English (en)
Other versions
DE2832154C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masatomo Furumi
Hidefumi Ito
Mineo Katsueda
Shikayuki Ochi
Takeaki Okabe
Gunma Takasaki
Isao Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2832154A1 publication Critical patent/DE2832154A1/de
Application granted granted Critical
Publication of DE2832154C2 publication Critical patent/DE2832154C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
DE19782832154 1977-07-22 1978-07-21 Halbleitervorrichtung mit isoliertem gate Granted DE2832154A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8739677A JPS5422781A (en) 1977-07-22 1977-07-22 Insulator gate protective semiconductor device

Publications (2)

Publication Number Publication Date
DE2832154A1 true DE2832154A1 (de) 1979-01-25
DE2832154C2 DE2832154C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-07-30

Family

ID=13913707

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782832154 Granted DE2832154A1 (de) 1977-07-22 1978-07-21 Halbleitervorrichtung mit isoliertem gate

Country Status (4)

Country Link
US (1) US4213140A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5422781A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2832154A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7807815A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305937A1 (en) * 1987-08-31 1989-03-08 National Semiconductor Corporation MOS i/o protection using switched body circuit design

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247534A (en) * 1975-10-15 1977-04-15 Nippon Steel Corp Process for forming rusttproofing underlayer on metallic articles
JPS5693368A (en) * 1979-12-27 1981-07-28 Fujitsu Ltd Mis transistor device
NL8301629A (nl) * 1983-05-09 1984-12-03 Philips Nv Halfgeleiderinrichting.
US5219770A (en) * 1983-11-30 1993-06-15 Fujitsu Limited Method for fabricating a MISFET including a common contact window
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
DE69022726T2 (de) * 1989-05-17 1996-03-07 Sarnoff David Res Center Scr-schutzanordnung mit niedriger zündspannung und struktur.
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure
US5151767A (en) * 1991-05-03 1992-09-29 North American Philips Corp. Power integrated circuit having reverse-voltage protection
JP3307481B2 (ja) * 1993-11-05 2002-07-24 三菱電機株式会社 半導体装置
US5846342A (en) * 1994-02-03 1998-12-08 Henkel Corporation Surface treatment agent for zinciferous-plated steel
DE19614010C2 (de) * 1996-04-09 2002-09-19 Infineon Technologies Ag Halbleiterbauelement mit einstellbarer, auf einem tunnelstromgesteuerten Lawinendurchbruch basierender Stromverstärkung und Verfahren zu dessen Herstellung
US6998685B2 (en) * 2003-09-15 2006-02-14 Chartered Semiconductor Manufacturing Ltd. Electrostatic discharge protection device with complementary dual drain implant
US20060284256A1 (en) * 2005-06-17 2006-12-21 Taiwan Semiconductor Manufacturing Co. Layout structure for ESD protection circuits
WO2008099317A1 (en) 2007-02-12 2008-08-21 Nxp B.V. Esd-protection device, a semiconductor device and an integrated system in a package comprising such a device
US8049279B2 (en) * 2009-07-06 2011-11-01 United Microelectronics Corp. Semiconductor device and method for fabricating the same
TWI467762B (zh) * 2009-07-14 2015-01-01 United Microelectronics Corp 半導體元件及其製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
DE1918222A1 (de) * 1968-04-10 1970-02-05 Rca Corp Feldeffekttransistor mit isolierter Steuerelektrode
DE2143029A1 (de) * 1970-09-18 1972-03-23 Rca Corp Halbleiterschaltungsbaustein
DE2106312B2 (de) * 1970-02-13 1973-01-11 Schutzschaltung zum schutz von feldeffekttransistoren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986043A (en) * 1974-12-20 1976-10-12 International Business Machines Corporation CMOS digital circuits with active shunt feedback amplifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
DE1918222A1 (de) * 1968-04-10 1970-02-05 Rca Corp Feldeffekttransistor mit isolierter Steuerelektrode
DE2106312B2 (de) * 1970-02-13 1973-01-11 Schutzschaltung zum schutz von feldeffekttransistoren
DE2143029A1 (de) * 1970-09-18 1972-03-23 Rca Corp Halbleiterschaltungsbaustein

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305937A1 (en) * 1987-08-31 1989-03-08 National Semiconductor Corporation MOS i/o protection using switched body circuit design

Also Published As

Publication number Publication date
US4213140A (en) 1980-07-15
NL7807815A (nl) 1979-01-24
DE2832154C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-07-30
JPS5422781A (en) 1979-02-20

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee