DE2743948A1 - Dynamisches halbleiter-speicherelement - Google Patents

Dynamisches halbleiter-speicherelement

Info

Publication number
DE2743948A1
DE2743948A1 DE19772743948 DE2743948A DE2743948A1 DE 2743948 A1 DE2743948 A1 DE 2743948A1 DE 19772743948 DE19772743948 DE 19772743948 DE 2743948 A DE2743948 A DE 2743948A DE 2743948 A1 DE2743948 A1 DE 2743948A1
Authority
DE
Germany
Prior art keywords
semiconductor layer
layer
word line
doped
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772743948
Other languages
German (de)
English (en)
Inventor
Gerhard Dipl Ing Grassl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19772743948 priority Critical patent/DE2743948A1/de
Priority to FR7826540A priority patent/FR2404891A1/fr
Priority to GB7837082A priority patent/GB2005470B/en
Priority to JP11986678A priority patent/JPS5458384A/ja
Priority to IT28175/78A priority patent/IT1098965B/it
Priority to BE190812A priority patent/BE870894A/fr
Publication of DE2743948A1 publication Critical patent/DE2743948A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
DE19772743948 1977-09-29 1977-09-29 Dynamisches halbleiter-speicherelement Withdrawn DE2743948A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE19772743948 DE2743948A1 (de) 1977-09-29 1977-09-29 Dynamisches halbleiter-speicherelement
FR7826540A FR2404891A1 (fr) 1977-09-29 1978-09-15 Element dynamique de memoire a semiconducteurs
GB7837082A GB2005470B (en) 1977-09-29 1978-09-15 Dynamic semiconductor storage elements
JP11986678A JPS5458384A (en) 1977-09-29 1978-09-28 Dynamic semiconductor memory cell
IT28175/78A IT1098965B (it) 1977-09-29 1978-09-28 Elemento memorizzatore dinamico a semiconduttori
BE190812A BE870894A (fr) 1977-09-29 1978-09-29 Element dynamique de memoire a semiconducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743948 DE2743948A1 (de) 1977-09-29 1977-09-29 Dynamisches halbleiter-speicherelement

Publications (1)

Publication Number Publication Date
DE2743948A1 true DE2743948A1 (de) 1979-04-12

Family

ID=6020261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772743948 Withdrawn DE2743948A1 (de) 1977-09-29 1977-09-29 Dynamisches halbleiter-speicherelement

Country Status (6)

Country Link
JP (1) JPS5458384A (fr)
BE (1) BE870894A (fr)
DE (1) DE2743948A1 (fr)
FR (1) FR2404891A1 (fr)
GB (1) GB2005470B (fr)
IT (1) IT1098965B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4208694A1 (de) * 1991-03-18 1992-09-24 Toshiba Kawasaki Kk Halbleiter-speicherbauelement

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0160951B2 (fr) * 1978-01-03 1989-12-26 Advanced Micro Devices Inc

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3685739A (en) * 1970-08-07 1972-08-22 Afa Corp Liquid dispensing apparatus
JPS472778U (fr) * 1971-01-27 1972-08-31
JPS4834939U (fr) * 1971-08-26 1973-04-26
JPS5137664Y2 (fr) * 1972-07-04 1976-09-14

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4208694A1 (de) * 1991-03-18 1992-09-24 Toshiba Kawasaki Kk Halbleiter-speicherbauelement
US5483482A (en) * 1991-03-18 1996-01-09 Kabushiki Kaisha Toshiba Semiconductor memory device having bidirectional potential barrier switching element
US5699294A (en) * 1991-03-18 1997-12-16 Kabushiki Kaisha Toshiba Semiconductor memory device having bidirectional potential barrier switching element

Also Published As

Publication number Publication date
GB2005470A (en) 1979-04-19
JPS5458384A (en) 1979-05-11
IT7828175A0 (it) 1978-09-28
FR2404891A1 (fr) 1979-04-27
GB2005470B (en) 1982-05-26
IT1098965B (it) 1985-09-18
FR2404891B1 (fr) 1983-12-02
BE870894A (fr) 1979-01-15

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Legal Events

Date Code Title Description
OAM Search report available
OC Search report available
8139 Disposal/non-payment of the annual fee