DE2743856C2 - Vorrichtung zum Abscheiden von Halbleitermaterial - Google Patents
Vorrichtung zum Abscheiden von HalbleitermaterialInfo
- Publication number
- DE2743856C2 DE2743856C2 DE2743856A DE2743856A DE2743856C2 DE 2743856 C2 DE2743856 C2 DE 2743856C2 DE 2743856 A DE2743856 A DE 2743856A DE 2743856 A DE2743856 A DE 2743856A DE 2743856 C2 DE2743856 C2 DE 2743856C2
- Authority
- DE
- Germany
- Prior art keywords
- quartz
- tube
- reaction vessel
- observation window
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000151 deposition Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000000463 material Substances 0.000 title claims description 11
- 239000010453 quartz Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910000831 Steel Inorganic materials 0.000 claims description 11
- 239000010959 steel Substances 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000008021 deposition Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005494 tarnishing Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2743856A DE2743856C2 (de) | 1977-09-29 | 1977-09-29 | Vorrichtung zum Abscheiden von Halbleitermaterial |
| IT28176/78A IT1098966B (it) | 1977-09-29 | 1978-09-28 | Procedimento e dispositivo per la deposizione di materiale semiconduttore |
| JP11986978A JPS5458351A (en) | 1977-09-29 | 1978-09-28 | Device for depositing semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2743856A DE2743856C2 (de) | 1977-09-29 | 1977-09-29 | Vorrichtung zum Abscheiden von Halbleitermaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2743856A1 DE2743856A1 (de) | 1979-04-12 |
| DE2743856C2 true DE2743856C2 (de) | 1987-03-05 |
Family
ID=6020225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2743856A Expired DE2743856C2 (de) | 1977-09-29 | 1977-09-29 | Vorrichtung zum Abscheiden von Halbleitermaterial |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5458351A (US06878557-20050412-C00065.png) |
| DE (1) | DE2743856C2 (US06878557-20050412-C00065.png) |
| IT (1) | IT1098966B (US06878557-20050412-C00065.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681652A (en) * | 1980-06-05 | 1987-07-21 | Rogers Leo C | Manufacture of polycrystalline silicon |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3194863A (en) * | 1961-07-24 | 1965-07-13 | Eastman Kodak Co | Compression rolling of multiple strips of organic polymers |
| DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
| GB1209580A (en) * | 1969-03-17 | 1970-10-21 | Hamco Mach & Elect Co | Automatic control for crystal growing apparatus |
| JPS5311189B2 (US06878557-20050412-C00065.png) * | 1972-10-30 | 1978-04-19 | ||
| DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
-
1977
- 1977-09-29 DE DE2743856A patent/DE2743856C2/de not_active Expired
-
1978
- 1978-09-28 IT IT28176/78A patent/IT1098966B/it active
- 1978-09-28 JP JP11986978A patent/JPS5458351A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2743856A1 (de) | 1979-04-12 |
| IT1098966B (it) | 1985-09-18 |
| IT7828176A0 (it) | 1978-09-28 |
| JPS5458351A (en) | 1979-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2102352C3 (de) | Hochfrequenzbetriebene Sprühvorrichtung | |
| DE2324365C3 (de) | Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper | |
| DE1187098B (de) | Verfahren zum Herstellen von Koerpern aus hochgereinigtem Halbleitermaterial | |
| DE2518853C3 (de) | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas | |
| CH664108A5 (de) | Verfahren und einrichtung zum erhitzen einer punktfoermigen stelle eines gegenstandes. | |
| DE2050076B2 (de) | Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial | |
| DE1248308B (de) | Vakuumofen zum kontinuierlichen Gluehen von Band aus reaktionsfaehigem Metall | |
| DE2743856C2 (de) | Vorrichtung zum Abscheiden von Halbleitermaterial | |
| DE2237488B2 (de) | Vorrichtung zum betrieb einer entgasungskammer | |
| DE2854707C2 (de) | Vorrichtung zur thermischen Zersetzung gasförmiger Verbindungen und ihre Verwendung | |
| DE2743950C2 (de) | Vorrichtung zum Abscheiden von Halbleitermaterial | |
| DE102004028714A1 (de) | Thermische Behandlungsvorrichtung | |
| LU87192A1 (de) | Vorrichtung zum herstellen amorpher keramikstoffe oder metallegierungen | |
| CH670516A5 (US06878557-20050412-C00065.png) | ||
| DE2906290C2 (de) | Vorrichtung zum Abscheiden von Halbleitermaterial | |
| DE2826860C2 (de) | Vorrichtung zum Abscheiden von Halbleitermaterial | |
| DE3424696A1 (de) | Vorrichtung zur zufuehrung von analysensubstanz in ein plasma | |
| EP0991797B1 (de) | Verfahren und vorrichtung zur herstellung elektrisch leitfähiger durchgänge in halbleiter-bauelementen | |
| DE2001700C3 (de) | Verdampfer für ein Gerät zur Rammenlosen Atomabsorptions- oder Atomfluoreszenz-Analyse | |
| DE1773377B1 (de) | Hochtemperatur-roentgen-diffraktometer | |
| DE1773377C (de) | Hochtemperatur-Röntgen-Diffraktometer | |
| DE19930742C2 (de) | Vorrichtung zur physiko-chemischen Modifizierung von Materialproben mittels eines Elektronenstrahls | |
| DE2149526C3 (de) | Vorrichtung zum Herstellen von Rohren aus Silicium | |
| DE10117664C1 (de) | Rohrstutzen zum Leiten von oder Eintauchen in Glasschmelzen sowie zu deren Erhitzung und die Verwendung des Rohrstutzens | |
| DE1125199B (de) | Auf den Tisch eines Auflichtmikroskops aufsetzbares Heizgeraet |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |