DE2711128A1 - Verfahren zum herstellen einer halbleiteranordnung - Google Patents

Verfahren zum herstellen einer halbleiteranordnung

Info

Publication number
DE2711128A1
DE2711128A1 DE19772711128 DE2711128A DE2711128A1 DE 2711128 A1 DE2711128 A1 DE 2711128A1 DE 19772711128 DE19772711128 DE 19772711128 DE 2711128 A DE2711128 A DE 2711128A DE 2711128 A1 DE2711128 A1 DE 2711128A1
Authority
DE
Germany
Prior art keywords
trichlorophenylsilane
solution
volume
trichlorethylene
xylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19772711128
Other languages
German (de)
English (en)
Inventor
Michael Raymond Gulett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of DE2711128A1 publication Critical patent/DE2711128A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136—Coating process making radiation sensitive element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
DE19772711128 1976-03-18 1977-03-15 Verfahren zum herstellen einer halbleiteranordnung Pending DE2711128A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/668,167 US4075367A (en) 1976-03-18 1976-03-18 Semiconductor processing of silicon nitride

Publications (1)

Publication Number Publication Date
DE2711128A1 true DE2711128A1 (de) 1977-09-29

Family

ID=24681277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772711128 Pending DE2711128A1 (de) 1976-03-18 1977-03-15 Verfahren zum herstellen einer halbleiteranordnung

Country Status (5)

Country Link
US (1) US4075367A (enExample)
JP (1) JPS52114276A (enExample)
DE (1) DE2711128A1 (enExample)
FR (1) FR2344963A1 (enExample)
GB (1) GB1528430A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792833A (en) * 1980-12-01 1982-06-09 Toshiba Corp Manufacture of semiconductor device
JPS5856340A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体ウエハ浄化方法
US4497890A (en) * 1983-04-08 1985-02-05 Motorola, Inc. Process for improving adhesion of resist to gold
US4552783A (en) * 1984-11-05 1985-11-12 General Electric Company Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
JPS62129846A (ja) * 1985-12-02 1987-06-12 Dainippon Screen Mfg Co Ltd フオトレジストの塗布方法及び塗布装置
EP0469370A3 (en) * 1990-07-31 1992-09-09 Gold Star Co. Ltd Etching process for sloped side walls
US6323139B1 (en) 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
US6300253B1 (en) 1998-04-07 2001-10-09 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
US5926739A (en) * 1995-12-04 1999-07-20 Micron Technology, Inc. Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
US5985771A (en) 1998-04-07 1999-11-16 Micron Technology, Inc. Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
US6635530B2 (en) 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
JP2003007579A (ja) * 2001-06-19 2003-01-10 Matsushita Electric Ind Co Ltd 有機薄膜形成方法
US20040150096A1 (en) 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
CN110908240A (zh) * 2018-09-14 2020-03-24 江西省长益光电有限公司 芯片用光刻胶及光刻工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482977A (en) * 1966-02-11 1969-12-09 Sylvania Electric Prod Method of forming adherent masks on oxide coated semiconductor bodies
US3549368A (en) * 1968-07-02 1970-12-22 Ibm Process for improving photoresist adhesion
US3706612A (en) * 1968-07-16 1972-12-19 Ibm Process for etching silicon nitride
US3586554A (en) * 1969-01-15 1971-06-22 Ibm Process for increasing photoresist adhesion to a semiconductor by treating the semiconductor with a disilylamide
US3758306A (en) * 1971-03-25 1973-09-11 Du Pont Photopolymerizable compositions and elements containing organosilanes
DE2153441A1 (de) * 1971-10-27 1973-05-10 Licentia Gmbh Verfahren zum herstellen eines halbleiterbauelementes
US3898351A (en) * 1972-05-26 1975-08-05 Ibm Substrate cleaning process
FR2193864B1 (enExample) * 1972-07-31 1974-12-27 Rhone Poulenc Sa
US3867218A (en) * 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer
US3962004A (en) * 1974-11-29 1976-06-08 Rca Corporation Pattern definition in an organic layer

Also Published As

Publication number Publication date
JPS52114276A (en) 1977-09-24
FR2344963B1 (enExample) 1979-07-20
FR2344963A1 (fr) 1977-10-14
US4075367A (en) 1978-02-21
GB1528430A (en) 1978-10-11

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Legal Events

Date Code Title Description
OHB Non-payment of the publication fee (examined application)