FR2344963A1 - Procede de traitement d'une couche de nitrure de silicium d'un dispositif semi-conducteur - Google Patents

Procede de traitement d'une couche de nitrure de silicium d'un dispositif semi-conducteur

Info

Publication number
FR2344963A1
FR2344963A1 FR7707172A FR7707172A FR2344963A1 FR 2344963 A1 FR2344963 A1 FR 2344963A1 FR 7707172 A FR7707172 A FR 7707172A FR 7707172 A FR7707172 A FR 7707172A FR 2344963 A1 FR2344963 A1 FR 2344963A1
Authority
FR
France
Prior art keywords
treating
semiconductor device
silicon nitride
nitride layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7707172A
Other languages
English (en)
French (fr)
Other versions
FR2344963B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of FR2344963A1 publication Critical patent/FR2344963A1/fr
Application granted granted Critical
Publication of FR2344963B1 publication Critical patent/FR2344963B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136—Coating process making radiation sensitive element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation
FR7707172A 1976-03-18 1977-03-10 Procede de traitement d'une couche de nitrure de silicium d'un dispositif semi-conducteur Granted FR2344963A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/668,167 US4075367A (en) 1976-03-18 1976-03-18 Semiconductor processing of silicon nitride

Publications (2)

Publication Number Publication Date
FR2344963A1 true FR2344963A1 (fr) 1977-10-14
FR2344963B1 FR2344963B1 (enExample) 1979-07-20

Family

ID=24681277

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7707172A Granted FR2344963A1 (fr) 1976-03-18 1977-03-10 Procede de traitement d'une couche de nitrure de silicium d'un dispositif semi-conducteur

Country Status (5)

Country Link
US (1) US4075367A (enExample)
JP (1) JPS52114276A (enExample)
DE (1) DE2711128A1 (enExample)
FR (1) FR2344963A1 (enExample)
GB (1) GB1528430A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792833A (en) * 1980-12-01 1982-06-09 Toshiba Corp Manufacture of semiconductor device
JPS5856340A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体ウエハ浄化方法
US4497890A (en) * 1983-04-08 1985-02-05 Motorola, Inc. Process for improving adhesion of resist to gold
US4552783A (en) * 1984-11-05 1985-11-12 General Electric Company Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
JPS62129846A (ja) * 1985-12-02 1987-06-12 Dainippon Screen Mfg Co Ltd フオトレジストの塗布方法及び塗布装置
EP0469370A3 (en) * 1990-07-31 1992-09-09 Gold Star Co. Ltd Etching process for sloped side walls
US6323139B1 (en) 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
US6300253B1 (en) 1998-04-07 2001-10-09 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
US5926739A (en) * 1995-12-04 1999-07-20 Micron Technology, Inc. Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
US5985771A (en) 1998-04-07 1999-11-16 Micron Technology, Inc. Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
US6635530B2 (en) 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
JP2003007579A (ja) * 2001-06-19 2003-01-10 Matsushita Electric Ind Co Ltd 有機薄膜形成方法
US20040150096A1 (en) 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
CN110908240A (zh) * 2018-09-14 2020-03-24 江西省长益光电有限公司 芯片用光刻胶及光刻工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2153441A1 (de) * 1971-10-27 1973-05-10 Licentia Gmbh Verfahren zum herstellen eines halbleiterbauelementes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482977A (en) * 1966-02-11 1969-12-09 Sylvania Electric Prod Method of forming adherent masks on oxide coated semiconductor bodies
US3549368A (en) * 1968-07-02 1970-12-22 Ibm Process for improving photoresist adhesion
US3706612A (en) * 1968-07-16 1972-12-19 Ibm Process for etching silicon nitride
US3586554A (en) * 1969-01-15 1971-06-22 Ibm Process for increasing photoresist adhesion to a semiconductor by treating the semiconductor with a disilylamide
US3758306A (en) * 1971-03-25 1973-09-11 Du Pont Photopolymerizable compositions and elements containing organosilanes
US3898351A (en) * 1972-05-26 1975-08-05 Ibm Substrate cleaning process
FR2193864B1 (enExample) * 1972-07-31 1974-12-27 Rhone Poulenc Sa
US3867218A (en) * 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer
US3962004A (en) * 1974-11-29 1976-06-08 Rca Corporation Pattern definition in an organic layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2153441A1 (de) * 1971-10-27 1973-05-10 Licentia Gmbh Verfahren zum herstellen eines halbleiterbauelementes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM T.D.B. VOL. 16, NO. 3, AOUT 1973, NEW YORK USA A.J. PERRAULT ET AL. "COATING PROCESS, PAGES 726-727) *
MICROELECTRONICS, VOL. 3, NO. 10, 1971, LUTON GB K.G. CLARK: "APPLICATION OF PHOTORESISTS IN SEMICONDUCTOR MANUFACTURING" PAGES 25-31 *

Also Published As

Publication number Publication date
JPS52114276A (en) 1977-09-24
FR2344963B1 (enExample) 1979-07-20
DE2711128A1 (de) 1977-09-29
US4075367A (en) 1978-02-21
GB1528430A (en) 1978-10-11

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