DE2656158C2 - - Google Patents
Info
- Publication number
- DE2656158C2 DE2656158C2 DE2656158A DE2656158A DE2656158C2 DE 2656158 C2 DE2656158 C2 DE 2656158C2 DE 2656158 A DE2656158 A DE 2656158A DE 2656158 A DE2656158 A DE 2656158A DE 2656158 C2 DE2656158 C2 DE 2656158C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- layer
- polycrystalline silicon
- collector
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 12
- 229910052681 coesite Inorganic materials 0.000 description 11
- 229910052906 cristobalite Inorganic materials 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 229910052682 stishovite Inorganic materials 0.000 description 11
- 229910052905 tridymite Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50146360A JPS5270761A (en) | 1975-12-10 | 1975-12-10 | Semiconductor device |
| JP797276A JPS5291654A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
| JP797376A JPS5291655A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2656158A1 DE2656158A1 (de) | 1977-06-23 |
| DE2656158C2 true DE2656158C2 (enrdf_load_stackoverflow) | 1987-10-08 |
Family
ID=27277825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762656158 Granted DE2656158A1 (de) | 1975-12-10 | 1976-12-10 | Halbleiterbauelement und verfahren zu dessen herstellung |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2656158A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1572703A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7713051A (nl) * | 1977-11-28 | 1979-05-30 | Philips Nv | Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501513B1 (enrdf_load_stackoverflow) * | 1968-12-11 | 1975-01-18 |
-
1976
- 1976-12-09 GB GB51405/76A patent/GB1572703A/en not_active Expired
- 1976-12-10 DE DE19762656158 patent/DE2656158A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1572703A (en) | 1980-07-30 |
| DE2656158A1 (de) | 1977-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0036634B1 (de) | Verfahren zur Herstellung einer bipolaren Transistorstruktur | |
| DE2224634C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE3043913A1 (de) | Halbleiteranordnung und verfahren zu ihrer herstellung | |
| EP0001574B1 (de) | Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung | |
| DE2749607C3 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE3032621A1 (de) | Verfahren zur herstellung einer halbleitervorrichtung | |
| DE1926884A1 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE2445879C2 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
| EP0001586A1 (de) | Integrierte Halbleiteranordnung mit vertikalen NPN- und PNP-Strukturen und Verfahren zur Herstellung | |
| DE2641752B2 (de) | Verfahren zur Herstellung eines Feldeffekttransistors | |
| DE3034894C2 (enrdf_load_stackoverflow) | ||
| DE3223230C2 (enrdf_load_stackoverflow) | ||
| DE3109074C2 (enrdf_load_stackoverflow) | ||
| DE2109352C2 (de) | Verfahren zum Herstellen eines lateralen bipolaren Halbleiter-Bauelements | |
| DE19958062C2 (de) | Verfahren zur Herstellung eines Bipolartransistors und Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit einem solchen Bipolartransistor | |
| DE1489250A1 (de) | Halbleitereinrichtung und Verfahren zu ihrer Herstellung | |
| DE2904480B2 (de) | Integrierte Halbleiterschaltung und Verfahren zu ihrem Herstellen | |
| DE3486144T2 (de) | Verfahren zur herstellung einer halbleiteranordnung. | |
| DE1802849B2 (de) | Verfahren zum herstellen einer monolithischen schaltung | |
| DE2656158C2 (enrdf_load_stackoverflow) | ||
| DE2600375C3 (de) | Halbleiteranordnung mit mindestens zwei komplementären Transistoren und Verfahren zu ihrer Herstellung | |
| DE2408402A1 (de) | Verfahren zur herstellung integrierter schaltungen bzw. nach einem solchen verfahren hergestellte integrierte halbleiterschaltungseinheit | |
| DE2403816B2 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| EP1050076A1 (de) | Verfahren zur herstellung von dioden | |
| DE3831555A1 (de) | Verfahren zum herstellen einer halbleitervorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8127 | New person/name/address of the applicant |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |