DE2656158A1 - Halbleiterbauelement und verfahren zu dessen herstellung - Google Patents

Halbleiterbauelement und verfahren zu dessen herstellung

Info

Publication number
DE2656158A1
DE2656158A1 DE19762656158 DE2656158A DE2656158A1 DE 2656158 A1 DE2656158 A1 DE 2656158A1 DE 19762656158 DE19762656158 DE 19762656158 DE 2656158 A DE2656158 A DE 2656158A DE 2656158 A1 DE2656158 A1 DE 2656158A1
Authority
DE
Germany
Prior art keywords
zone
collector
emitter
polycrystalline silicon
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19762656158
Other languages
German (de)
English (en)
Other versions
DE2656158C2 (enrdf_load_stackoverflow
Inventor
Takashi Ajima
Toshio Mitsuno
Kiyoshi Takaoki
Masato Uchida
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50146360A external-priority patent/JPS5270761A/ja
Priority claimed from JP797376A external-priority patent/JPS5291655A/ja
Priority claimed from JP797276A external-priority patent/JPS5291654A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2656158A1 publication Critical patent/DE2656158A1/de
Application granted granted Critical
Publication of DE2656158C2 publication Critical patent/DE2656158C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
DE19762656158 1975-12-10 1976-12-10 Halbleiterbauelement und verfahren zu dessen herstellung Granted DE2656158A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP50146360A JPS5270761A (en) 1975-12-10 1975-12-10 Semiconductor device
JP797376A JPS5291655A (en) 1976-01-29 1976-01-29 Semiconductor device
JP797276A JPS5291654A (en) 1976-01-29 1976-01-29 Semiconductor device

Publications (2)

Publication Number Publication Date
DE2656158A1 true DE2656158A1 (de) 1977-06-23
DE2656158C2 DE2656158C2 (enrdf_load_stackoverflow) 1987-10-08

Family

ID=27277825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762656158 Granted DE2656158A1 (de) 1975-12-10 1976-12-10 Halbleiterbauelement und verfahren zu dessen herstellung

Country Status (2)

Country Link
DE (1) DE2656158A1 (enrdf_load_stackoverflow)
GB (1) GB1572703A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2410336A1 (fr) * 1977-11-28 1979-06-22 Philips Nv Dispositif semi-conducteur a memoire permanente et procede pour fabriquer un tel dispositif

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1961739A1 (de) * 1968-12-11 1970-06-18 Hitachi Ltd Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1961739A1 (de) * 1968-12-11 1970-06-18 Hitachi Ltd Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GB-Buch "European Conference on Ion Implantation in Reading 7.-9.9.1970, Stevanage 1970, S. 81-83 *
IBM J. of Research and Development, Bd. 4, 1960, Nr. 3, S. 256-263 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2410336A1 (fr) * 1977-11-28 1979-06-22 Philips Nv Dispositif semi-conducteur a memoire permanente et procede pour fabriquer un tel dispositif

Also Published As

Publication number Publication date
GB1572703A (en) 1980-07-30
DE2656158C2 (enrdf_load_stackoverflow) 1987-10-08

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee