GB1572703A - Semiconductor device and method of producing a semiconductor device - Google Patents
Semiconductor device and method of producing a semiconductor device Download PDFInfo
- Publication number
- GB1572703A GB1572703A GB51405/76A GB5140576A GB1572703A GB 1572703 A GB1572703 A GB 1572703A GB 51405/76 A GB51405/76 A GB 51405/76A GB 5140576 A GB5140576 A GB 5140576A GB 1572703 A GB1572703 A GB 1572703A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- impurity
- conductivity type
- collector
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 40
- 239000012535 impurity Substances 0.000 claims description 38
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101001005711 Homo sapiens MARVEL domain-containing protein 2 Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50146360A JPS5270761A (en) | 1975-12-10 | 1975-12-10 | Semiconductor device |
| JP797276A JPS5291654A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
| JP797376A JPS5291655A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1572703A true GB1572703A (en) | 1980-07-30 |
Family
ID=27277825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB51405/76A Expired GB1572703A (en) | 1975-12-10 | 1976-12-09 | Semiconductor device and method of producing a semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2656158A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1572703A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7713051A (nl) * | 1977-11-28 | 1979-05-30 | Philips Nv | Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501513B1 (enrdf_load_stackoverflow) * | 1968-12-11 | 1975-01-18 |
-
1976
- 1976-12-09 GB GB51405/76A patent/GB1572703A/en not_active Expired
- 1976-12-10 DE DE19762656158 patent/DE2656158A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2656158C2 (enrdf_load_stackoverflow) | 1987-10-08 |
| DE2656158A1 (de) | 1977-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4080619A (en) | Bipolar type semiconductor device | |
| US4269631A (en) | Selective epitaxy method using laser annealing for making filamentary transistors | |
| US6049098A (en) | Bipolar transistor having an emitter region formed of silicon carbide | |
| US4264382A (en) | Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions | |
| US4583106A (en) | Fabrication methods for high performance lateral bipolar transistors | |
| US4196440A (en) | Lateral PNP or NPN with a high gain | |
| US4412378A (en) | Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation | |
| US4243435A (en) | Bipolar transistor fabrication process with an ion implanted emitter | |
| JPH0644568B2 (ja) | 横型トランジスタの製造方法 | |
| EP0052198B1 (en) | Method of manufacturing semiconductor devices using self-alignment techniques | |
| US4408387A (en) | Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask | |
| US4146413A (en) | Method of producing a P-N junction utilizing polycrystalline silicon | |
| KR900005123B1 (ko) | 바이폴라 트랜지스터의 제조방법 | |
| GB1467263A (en) | Semiconductor device | |
| US4343080A (en) | Method of producing a semiconductor device | |
| US3832246A (en) | Methods for making avalanche diodes | |
| US5198692A (en) | Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions | |
| US4498224A (en) | Method of manufacturing a MOSFET using accelerated ions to form an amorphous region | |
| EP0180457B1 (en) | Semiconductor integrated circuit device and method for producing same | |
| US4780426A (en) | Method for manufacturing high-breakdown voltage semiconductor device | |
| KR930005509B1 (ko) | Mos형 집적회로 | |
| US4149915A (en) | Process for producing defect-free semiconductor devices having overlapping high conductivity impurity regions | |
| US3951693A (en) | Ion-implanted self-aligned transistor device including the fabrication method therefor | |
| US4860086A (en) | Semiconductor device | |
| US4451844A (en) | Polysilicon emitter and base contacts separated by lightly doped poly separator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |