DE2644332A1 - Pressure contact for thyristor chips gate electrode - has cup spring pressing contact pad down onto gate and inside ceramic cylinder - Google Patents
Pressure contact for thyristor chips gate electrode - has cup spring pressing contact pad down onto gate and inside ceramic cylinderInfo
- Publication number
- DE2644332A1 DE2644332A1 DE19762644332 DE2644332A DE2644332A1 DE 2644332 A1 DE2644332 A1 DE 2644332A1 DE 19762644332 DE19762644332 DE 19762644332 DE 2644332 A DE2644332 A DE 2644332A DE 2644332 A1 DE2644332 A1 DE 2644332A1
- Authority
- DE
- Germany
- Prior art keywords
- gate
- gate electrode
- ceramic cylinder
- contact
- down onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
The pressure contact, for a thyristor chip's gate electrode, consists of a main contact (3) on the surface of the chip and a second contact (45) pressed onto the gate electrode (13). The second contact is located in a hole in the main contact and is pressed down by a cup-spring (42) acting between it and the underside of a ceramic cylinder (41) that slides into the hole in the main contact. The conductor (41) leading to the gate contact passes through a vertical slit in the side of the ceramic cylinder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2644332A DE2644332C2 (en) | 1976-10-01 | 1976-10-01 | Arrangement for pressure contacting the control electrode of a thyristor semiconductor disk |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2644332A DE2644332C2 (en) | 1976-10-01 | 1976-10-01 | Arrangement for pressure contacting the control electrode of a thyristor semiconductor disk |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2644332A1 true DE2644332A1 (en) | 1978-04-06 |
DE2644332C2 DE2644332C2 (en) | 1983-05-19 |
Family
ID=5989418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2644332A Expired DE2644332C2 (en) | 1976-10-01 | 1976-10-01 | Arrangement for pressure contacting the control electrode of a thyristor semiconductor disk |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2644332C2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0158749A1 (en) * | 1984-01-17 | 1985-10-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconducteur device having pressure loaded members |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1913298B2 (en) * | 1969-03-15 | 1972-03-02 | Licenüa Patent Verwaltungs GmbH, 6000 Frankfurt | THYRISTOR WITH PRESSURE CONTACT |
-
1976
- 1976-10-01 DE DE2644332A patent/DE2644332C2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1913298B2 (en) * | 1969-03-15 | 1972-03-02 | Licenüa Patent Verwaltungs GmbH, 6000 Frankfurt | THYRISTOR WITH PRESSURE CONTACT |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0158749A1 (en) * | 1984-01-17 | 1985-10-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconducteur device having pressure loaded members |
Also Published As
Publication number | Publication date |
---|---|
DE2644332C2 (en) | 1983-05-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OAP | Request for examination filed | ||
OD | Request for examination | ||
8126 | Change of the secondary classification |
Ipc: H01L 29/74 |
|
D2 | Grant after examination | ||
8320 | Willingness to grant licenses declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: EUPEC EUROPAEISCHE GESELLSCHAFT FUER LEISTUNGSHALB |
|
8339 | Ceased/non-payment of the annual fee |