DE2638942A1 - Ladungsgekoppelte schaltungsanordnungen und vorrichtungen - Google Patents
Ladungsgekoppelte schaltungsanordnungen und vorrichtungenInfo
- Publication number
- DE2638942A1 DE2638942A1 DE19762638942 DE2638942A DE2638942A1 DE 2638942 A1 DE2638942 A1 DE 2638942A1 DE 19762638942 DE19762638942 DE 19762638942 DE 2638942 A DE2638942 A DE 2638942A DE 2638942 A1 DE2638942 A1 DE 2638942A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- charge
- area
- region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 142
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000003860 storage Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 37
- 239000002800 charge carrier Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000012546 transfer Methods 0.000 claims description 19
- 230000015556 catabolic process Effects 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 101100343701 Mus musculus Loxl1 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 230000035987 intoxication Effects 0.000 description 1
- 231100000566 intoxication Toxicity 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 210000003296 saliva Anatomy 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3670175A GB1518953A (en) | 1975-09-05 | 1975-09-05 | Charge coupled dircuit arrangements and devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2638942A1 true DE2638942A1 (de) | 1977-03-17 |
| DE2638942C2 DE2638942C2 (de) | 1987-01-15 |
Family
ID=10390476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762638942 Expired DE2638942C2 (de) | 1975-09-05 | 1976-08-28 | Ladungsgekoppelte Anordnung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5841786B2 (xx) |
| CA (1) | CA1085052A (xx) |
| DE (1) | DE2638942C2 (xx) |
| FR (1) | FR2323235A1 (xx) |
| GB (1) | GB1518953A (xx) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4266234A (en) * | 1978-01-16 | 1981-05-05 | Texas Instruments Incorporated | Parallel readout stratified channel CCD |
| US4271419A (en) * | 1978-01-16 | 1981-06-02 | Texas Instruments Incorporated | Serial readout stratified channel CCD |
| US4277792A (en) * | 1978-02-17 | 1981-07-07 | Texas Instruments Incorporated | Piggyback readout stratified channel CCD |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2252148A1 (de) * | 1971-10-27 | 1973-05-03 | Philips Nv | Halbleiteranordnung |
| US3760202A (en) * | 1971-01-14 | 1973-09-18 | Rca Corp | Input circuits for charged-coupled circuits |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
| JPS5318155B2 (xx) * | 1971-12-29 | 1978-06-13 |
-
1975
- 1975-09-05 GB GB3670175A patent/GB1518953A/en not_active Expired
-
1976
- 1976-08-28 DE DE19762638942 patent/DE2638942C2/de not_active Expired
- 1976-09-01 CA CA260,359A patent/CA1085052A/en not_active Expired
- 1976-09-03 FR FR7626625A patent/FR2323235A1/fr active Granted
- 1976-09-06 JP JP10657576A patent/JPS5841786B2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3760202A (en) * | 1971-01-14 | 1973-09-18 | Rca Corp | Input circuits for charged-coupled circuits |
| DE2252148A1 (de) * | 1971-10-27 | 1973-05-03 | Philips Nv | Halbleiteranordnung |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4266234A (en) * | 1978-01-16 | 1981-05-05 | Texas Instruments Incorporated | Parallel readout stratified channel CCD |
| US4271419A (en) * | 1978-01-16 | 1981-06-02 | Texas Instruments Incorporated | Serial readout stratified channel CCD |
| US4277792A (en) * | 1978-02-17 | 1981-07-07 | Texas Instruments Incorporated | Piggyback readout stratified channel CCD |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2323235B1 (xx) | 1982-11-12 |
| CA1085052A (en) | 1980-09-02 |
| JPS5232685A (en) | 1977-03-12 |
| FR2323235A1 (fr) | 1977-04-01 |
| GB1518953A (en) | 1978-07-26 |
| DE2638942C2 (de) | 1987-01-15 |
| JPS5841786B2 (ja) | 1983-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |