CA1085052A - Charge coupled circuit arrangements and devices - Google Patents
Charge coupled circuit arrangements and devicesInfo
- Publication number
- CA1085052A CA1085052A CA260,359A CA260359A CA1085052A CA 1085052 A CA1085052 A CA 1085052A CA 260359 A CA260359 A CA 260359A CA 1085052 A CA1085052 A CA 1085052A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- region
- conductivity type
- charge
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 238000003860 storage Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000002800 charge carrier Substances 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 149
- 238000012546 transfer Methods 0.000 claims description 32
- 230000005684 electric field Effects 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 101100285518 Drosophila melanogaster how gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3670175A GB1518953A (en) | 1975-09-05 | 1975-09-05 | Charge coupled dircuit arrangements and devices |
| GB36701-75 | 1975-09-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1085052A true CA1085052A (en) | 1980-09-02 |
Family
ID=10390476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA260,359A Expired CA1085052A (en) | 1975-09-05 | 1976-09-01 | Charge coupled circuit arrangements and devices |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5841786B2 (xx) |
| CA (1) | CA1085052A (xx) |
| DE (1) | DE2638942C2 (xx) |
| FR (1) | FR2323235A1 (xx) |
| GB (1) | GB1518953A (xx) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4266234A (en) * | 1978-01-16 | 1981-05-05 | Texas Instruments Incorporated | Parallel readout stratified channel CCD |
| US4271419A (en) * | 1978-01-16 | 1981-06-02 | Texas Instruments Incorporated | Serial readout stratified channel CCD |
| US4277792A (en) * | 1978-02-17 | 1981-07-07 | Texas Instruments Incorporated | Piggyback readout stratified channel CCD |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| NL176406C (nl) * | 1971-10-27 | 1985-04-01 | Philips Nv | Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag. |
| JPS5318155B2 (xx) * | 1971-12-29 | 1978-06-13 |
-
1975
- 1975-09-05 GB GB3670175A patent/GB1518953A/en not_active Expired
-
1976
- 1976-08-28 DE DE19762638942 patent/DE2638942C2/de not_active Expired
- 1976-09-01 CA CA260,359A patent/CA1085052A/en not_active Expired
- 1976-09-03 FR FR7626625A patent/FR2323235A1/fr active Granted
- 1976-09-06 JP JP10657576A patent/JPS5841786B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2323235B1 (xx) | 1982-11-12 |
| JPS5232685A (en) | 1977-03-12 |
| FR2323235A1 (fr) | 1977-04-01 |
| GB1518953A (en) | 1978-07-26 |
| DE2638942C2 (de) | 1987-01-15 |
| DE2638942A1 (de) | 1977-03-17 |
| JPS5841786B2 (ja) | 1983-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |