FR2323235A1 - Circuits et dispositifs a couplage de charge - Google Patents

Circuits et dispositifs a couplage de charge

Info

Publication number
FR2323235A1
FR2323235A1 FR7626625A FR7626625A FR2323235A1 FR 2323235 A1 FR2323235 A1 FR 2323235A1 FR 7626625 A FR7626625 A FR 7626625A FR 7626625 A FR7626625 A FR 7626625A FR 2323235 A1 FR2323235 A1 FR 2323235A1
Authority
FR
France
Prior art keywords
devices
coupling circuits
load coupling
load
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626625A
Other languages
English (en)
French (fr)
Other versions
FR2323235B1 (xx
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2323235A1 publication Critical patent/FR2323235A1/fr
Application granted granted Critical
Publication of FR2323235B1 publication Critical patent/FR2323235B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)
FR7626625A 1975-09-05 1976-09-03 Circuits et dispositifs a couplage de charge Granted FR2323235A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3670175A GB1518953A (en) 1975-09-05 1975-09-05 Charge coupled dircuit arrangements and devices

Publications (2)

Publication Number Publication Date
FR2323235A1 true FR2323235A1 (fr) 1977-04-01
FR2323235B1 FR2323235B1 (xx) 1982-11-12

Family

ID=10390476

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626625A Granted FR2323235A1 (fr) 1975-09-05 1976-09-03 Circuits et dispositifs a couplage de charge

Country Status (5)

Country Link
JP (1) JPS5841786B2 (xx)
CA (1) CA1085052A (xx)
DE (1) DE2638942C2 (xx)
FR (1) FR2323235A1 (xx)
GB (1) GB1518953A (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266234A (en) * 1978-01-16 1981-05-05 Texas Instruments Incorporated Parallel readout stratified channel CCD
US4271419A (en) * 1978-01-16 1981-06-02 Texas Instruments Incorporated Serial readout stratified channel CCD
US4277792A (en) * 1978-02-17 1981-07-07 Texas Instruments Incorporated Piggyback readout stratified channel CCD

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2105251A1 (xx) * 1970-09-04 1972-04-28 Gen Electric
US3852801A (en) * 1971-12-29 1974-12-03 Hitachi Ltd Charge-coupled semiconductor device provided with biasing charges

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2105251A1 (xx) * 1970-09-04 1972-04-28 Gen Electric
US3852801A (en) * 1971-12-29 1974-12-03 Hitachi Ltd Charge-coupled semiconductor device provided with biasing charges

Also Published As

Publication number Publication date
FR2323235B1 (xx) 1982-11-12
CA1085052A (en) 1980-09-02
JPS5232685A (en) 1977-03-12
GB1518953A (en) 1978-07-26
DE2638942C2 (de) 1987-01-15
DE2638942A1 (de) 1977-03-17
JPS5841786B2 (ja) 1983-09-14

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Legal Events

Date Code Title Description
ST Notification of lapse