DE2637004C2 - Dynamischer Halbleiterspeicher - Google Patents

Dynamischer Halbleiterspeicher

Info

Publication number
DE2637004C2
DE2637004C2 DE2637004A DE2637004A DE2637004C2 DE 2637004 C2 DE2637004 C2 DE 2637004C2 DE 2637004 A DE2637004 A DE 2637004A DE 2637004 A DE2637004 A DE 2637004A DE 2637004 C2 DE2637004 C2 DE 2637004C2
Authority
DE
Germany
Prior art keywords
memory
refresh
gate
output
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2637004A
Other languages
German (de)
English (en)
Other versions
DE2637004A1 (de
Inventor
Ezio Sedriano Mailand/Milano Cislaghi
Renzo Melegnano Mailand/Milano Federzini
Alessandro Cornaredo Mailand/Milano Scotti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull HN Information Systems Italia SpA
Original Assignee
Honeywell Information Systems Italia SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Information Systems Italia SpA filed Critical Honeywell Information Systems Italia SpA
Publication of DE2637004A1 publication Critical patent/DE2637004A1/de
Application granted granted Critical
Publication of DE2637004C2 publication Critical patent/DE2637004C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE2637004A 1975-08-20 1976-08-17 Dynamischer Halbleiterspeicher Expired DE2637004C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT26447/75A IT1041882B (it) 1975-08-20 1975-08-20 Memoria dinamica a semiconduttori e relativo sistema di recarica

Publications (2)

Publication Number Publication Date
DE2637004A1 DE2637004A1 (de) 1977-03-03
DE2637004C2 true DE2637004C2 (de) 1986-10-09

Family

ID=11219525

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2637004A Expired DE2637004C2 (de) 1975-08-20 1976-08-17 Dynamischer Halbleiterspeicher

Country Status (6)

Country Link
US (1) US4106108A (US06256357-20010703-M00001.png)
DE (1) DE2637004C2 (US06256357-20010703-M00001.png)
FR (1) FR2334169A1 (US06256357-20010703-M00001.png)
GB (1) GB1510948A (US06256357-20010703-M00001.png)
IT (1) IT1041882B (US06256357-20010703-M00001.png)
MY (1) MY8200126A (US06256357-20010703-M00001.png)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218753A (en) * 1977-02-28 1980-08-19 Data General Corporation Microcode-controlled memory refresh apparatus for a data processing system
IT1117301B (it) * 1977-05-25 1986-02-17 Olivetti & Co Spa Calcotore elettronico con dispositivo di rinfresco di una memoria operativa dinamica
US4185323A (en) * 1978-07-20 1980-01-22 Honeywell Information Systems Inc. Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations
US4249247A (en) * 1979-01-08 1981-02-03 Ncr Corporation Refresh system for dynamic RAM memory
US4241425A (en) * 1979-02-09 1980-12-23 Bell Telephone Laboratories, Incorporated Organization for dynamic random access memory
US4317169A (en) * 1979-02-14 1982-02-23 Honeywell Information Systems Inc. Data processing system having centralized memory refresh
US4387423A (en) * 1979-02-16 1983-06-07 Honeywell Information Systems Inc. Microprogrammed system having single microstep apparatus
JPS55132593A (en) * 1979-04-02 1980-10-15 Fujitsu Ltd Refresh control method for memory unit
US4449183A (en) * 1979-07-09 1984-05-15 Digital Equipment Corporation Arbitration scheme for a multiported shared functional device for use in multiprocessing systems
US4310880A (en) * 1979-09-10 1982-01-12 Nixdorf Computer Corporation High-speed synchronous computer using pipelined registers and a two-level fixed priority circuit
FR2474227A1 (fr) * 1980-01-17 1981-07-24 Cii Honeywell Bull Procede de rafraichissement pour banc de memoire a circuit " mos " et sequenceur correspondant
US4328566A (en) * 1980-06-24 1982-05-04 Pitney Bowes Inc. Dynamic memory refresh system with additional refresh cycles
DE3133838C2 (de) * 1981-08-27 1986-11-13 Otto 7750 Konstanz Müller Schaltungsanordnung zur Übergabe des Refresh-Signals an einem Halbleiterspeicher
US4567571A (en) * 1982-09-07 1986-01-28 Honeywell Information Systems, Inc. Memory control for refreshing in a step mode
US4546273A (en) * 1983-01-11 1985-10-08 Burroughs Corporation Dynamic re-programmable PLA
US4625301A (en) * 1983-11-30 1986-11-25 Tandy Corporation Dynamic memory refresh circuit
US4625296A (en) * 1984-01-17 1986-11-25 The Perkin-Elmer Corporation Memory refresh circuit with varying system transparency
JPS6142795A (ja) * 1984-08-03 1986-03-01 Toshiba Corp 半導体記憶装置の行デコ−ダ系
US4758993A (en) * 1984-11-19 1988-07-19 Fujitsu Limited Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays
US4701843A (en) * 1985-04-01 1987-10-20 Ncr Corporation Refresh system for a page addressable memory
JPH0612613B2 (ja) * 1986-03-18 1994-02-16 富士通株式会社 半導体記憶装置
US4831594A (en) * 1986-09-25 1989-05-16 Texas Instrument, Inc. Process and device for refreshing an array of dynamic memory cells during precharge of the column lines
EP0310712B1 (en) * 1987-10-05 1993-09-01 Océ-Nederland B.V. Front-end system for a raster output scanner
US5193165A (en) * 1989-12-13 1993-03-09 International Business Machines Corporation Memory card refresh buffer
US5265231A (en) * 1991-02-08 1993-11-23 Thinking Machines Corporation Refresh control arrangement and a method for refreshing a plurality of random access memory banks in a memory system
US5465339A (en) * 1991-02-27 1995-11-07 Vlsi Technology, Inc. Decoupled refresh on local and system busses in a PC/at or similar microprocessor environment
JPH04372790A (ja) * 1991-06-21 1992-12-25 Sharp Corp 半導体記憶装置
US5291443A (en) * 1991-06-26 1994-03-01 Micron Technology, Inc. Simultaneous read and refresh of different rows in a dram
KR950014089B1 (ko) * 1993-11-08 1995-11-21 현대전자산업주식회사 동기식 디램의 히든 셀프 리프레쉬 방법 및 장치
US5748547A (en) * 1996-05-24 1998-05-05 Shau; Jeng-Jye High performance semiconductor memory devices having multiple dimension bit lines
EP0811984B1 (de) * 1996-06-04 2001-05-02 Infineon Technologies AG Verfahren zum Lesen und Auffrischen eines dynamischen Halbleiterspeichers
US5991851A (en) * 1997-05-02 1999-11-23 Enhanced Memory Systems, Inc. Enhanced signal processing random access memory device utilizing a DRAM memory array integrated with an associated SRAM cache and internal refresh control
JPH11353872A (ja) * 1998-06-04 1999-12-24 Oki Electric Ind Co Ltd メモリインタフェース回路
JP4768163B2 (ja) * 2001-08-03 2011-09-07 富士通セミコンダクター株式会社 半導体メモリ
US7330391B2 (en) * 2005-10-17 2008-02-12 Infineon Technologies Ag Memory having directed auto-refresh
JP4816911B2 (ja) * 2006-02-07 2011-11-16 日本電気株式会社 メモリの同期化方法及びリフレッシュ制御回路
JP4912718B2 (ja) * 2006-03-30 2012-04-11 富士通セミコンダクター株式会社 ダイナミック型半導体メモリ
JP5018074B2 (ja) * 2006-12-22 2012-09-05 富士通セミコンダクター株式会社 メモリ装置，メモリコントローラ及びメモリシステム
JP5157207B2 (ja) * 2007-03-16 2013-03-06 富士通セミコンダクター株式会社 半導体メモリ、メモリコントローラ、システムおよび半導体メモリの動作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800295A (en) * 1971-12-30 1974-03-26 Ibm Asynchronously operated memory system
US3786437A (en) * 1972-01-03 1974-01-15 Honeywell Inf Systems Random access memory system utilizing an inverting cell concept
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3748651A (en) * 1972-02-16 1973-07-24 Cogar Corp Refresh control for add-on semiconductor memory
DE2247835C3 (de) * 1972-09-29 1978-10-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Regenerieren der Speicherinhalte von MOS-Speichern und MOS-Speicher zur Durchführung dieses Verfahrens

Also Published As

Publication number Publication date
US4106108A (en) 1978-08-08
IT1041882B (it) 1980-01-10
FR2334169A1 (fr) 1977-07-01
FR2334169B1 (US06256357-20010703-M00001.png) 1981-12-18
DE2637004A1 (de) 1977-03-03
MY8200126A (en) 1982-12-31
GB1510948A (en) 1978-05-17

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee