DE2636971C2 - Verfahren zum Herstellen einer isolierenden Schicht mit ebener Oberfläche auf einer unebenen Oberfläche eines Substrats - Google Patents
Verfahren zum Herstellen einer isolierenden Schicht mit ebener Oberfläche auf einer unebenen Oberfläche eines SubstratsInfo
- Publication number
- DE2636971C2 DE2636971C2 DE2636971A DE2636971A DE2636971C2 DE 2636971 C2 DE2636971 C2 DE 2636971C2 DE 2636971 A DE2636971 A DE 2636971A DE 2636971 A DE2636971 A DE 2636971A DE 2636971 C2 DE2636971 C2 DE 2636971C2
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- mask
- layer
- raised areas
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 2
- 230000001186 cumulative effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/621,899 US4007103A (en) | 1975-10-14 | 1975-10-14 | Planarizing insulative layers by resputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2636971A1 DE2636971A1 (de) | 1977-04-28 |
| DE2636971C2 true DE2636971C2 (de) | 1984-05-24 |
Family
ID=24492123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2636971A Expired DE2636971C2 (de) | 1975-10-14 | 1976-08-17 | Verfahren zum Herstellen einer isolierenden Schicht mit ebener Oberfläche auf einer unebenen Oberfläche eines Substrats |
Country Status (7)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4151010A (en) * | 1978-06-30 | 1979-04-24 | International Business Machines Corporation | Forming adjacent impurity regions in a semiconductor by oxide masking |
| JPS5511312A (en) * | 1978-07-10 | 1980-01-26 | Hitachi Ltd | Manufacturing method of semiconductor device |
| US4410622A (en) * | 1978-12-29 | 1983-10-18 | International Business Machines Corporation | Forming interconnections for multilevel interconnection metallurgy systems |
| JPS57204133A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Manufacture of semiconductor integrated circuit |
| JPS5895821A (ja) * | 1981-11-30 | 1983-06-07 | Mitsubishi Electric Corp | 平行平板型プラズマｃｖｄ法 |
| CA1169022A (en) * | 1982-04-19 | 1984-06-12 | Kevin Duncan | Integrated circuit planarizing process |
| US4541169A (en) * | 1984-10-29 | 1985-09-17 | International Business Machines Corporation | Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip |
| US5182235A (en) * | 1985-02-20 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method for a semiconductor device having a bias sputtered insulating film |
| DE3650612T2 (de) * | 1985-05-13 | 1997-08-21 | Nippon Telegraph & Telephone | Verfahren zur Planarisierung einer dünnen Al-Schicht |
| US4761332A (en) * | 1985-06-24 | 1988-08-02 | International Business Machines Corporation | Planarized ceramic substrates |
| US4891112A (en) * | 1985-11-12 | 1990-01-02 | Eastman Kodak Company | Sputtering method for reducing hillocking in aluminum layers formed on substrates |
| US4690746A (en) * | 1986-02-24 | 1987-09-01 | Genus, Inc. | Interlayer dielectric process |
| US4732658A (en) * | 1986-12-03 | 1988-03-22 | Honeywell Inc. | Planarization of silicon semiconductor devices |
| US4756810A (en) * | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
| JPS63234534A (ja) * | 1987-03-24 | 1988-09-29 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| US5215933A (en) * | 1990-05-11 | 1993-06-01 | Kabushiki Kaisha Toshiba | Method of manufacturing nonvolatile semiconductor memory device |
| JP3048072B2 (ja) * | 1991-05-25 | 2000-06-05 | ローム株式会社 | 酸化膜の成膜方法及びその装置 |
| JPH07153745A (ja) * | 1993-12-01 | 1995-06-16 | Nec Corp | 半導体装置の製造方法 |
| US5928960A (en) * | 1996-10-24 | 1999-07-27 | International Business Machines Corporation | Process for reducing pattern factor effects in CMP planarization |
| US6593241B1 (en) * | 1998-05-11 | 2003-07-15 | Applied Materials Inc. | Method of planarizing a semiconductor device using a high density plasma system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3474021A (en) * | 1966-01-12 | 1969-10-21 | Ibm | Method of forming openings using sequential sputtering and chemical etching |
| US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
-
1975
- 1975-10-14 US US05/621,899 patent/US4007103A/en not_active Expired - Lifetime
-
1976
- 1976-08-17 DE DE2636971A patent/DE2636971C2/de not_active Expired
- 1976-08-25 FR FR7626314A patent/FR2328285A1/fr active Granted
- 1976-09-24 IT IT27569/76A patent/IT1078800B/it active
- 1976-09-29 JP JP51116084A patent/JPS5247679A/ja active Granted
- 1976-10-08 CA CA263,201A patent/CA1067038A/en not_active Expired
- 1976-10-13 GB GB42465/76A patent/GB1497779A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2328285B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-06-30 |
| JPS5535853B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-09-17 |
| US4007103A (en) | 1977-02-08 |
| DE2636971A1 (de) | 1977-04-28 |
| IT1078800B (it) | 1985-05-08 |
| GB1497779A (en) | 1978-01-12 |
| JPS5247679A (en) | 1977-04-15 |
| CA1067038A (en) | 1979-11-27 |
| FR2328285A1 (fr) | 1977-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8128 | New person/name/address of the agent |
Representative=s name: MOENIG, A., DIPL.-ING., PAT.-ASS., 7030 BOEBLINGEN |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |