GB1497779A - Semiconductor integrated circuits - Google Patents
Semiconductor integrated circuitsInfo
- Publication number
- GB1497779A GB1497779A GB42465/76A GB4246576A GB1497779A GB 1497779 A GB1497779 A GB 1497779A GB 42465/76 A GB42465/76 A GB 42465/76A GB 4246576 A GB4246576 A GB 4246576A GB 1497779 A GB1497779 A GB 1497779A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- etched
- photoresist
- raised
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/621,899 US4007103A (en) | 1975-10-14 | 1975-10-14 | Planarizing insulative layers by resputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1497779A true GB1497779A (en) | 1978-01-12 |
Family
ID=24492123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB42465/76A Expired GB1497779A (en) | 1975-10-14 | 1976-10-13 | Semiconductor integrated circuits |
Country Status (7)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2119166A (en) * | 1982-04-19 | 1983-11-09 | Mitel Corp | Integrated circuit planarizing process |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4151010A (en) * | 1978-06-30 | 1979-04-24 | International Business Machines Corporation | Forming adjacent impurity regions in a semiconductor by oxide masking |
JPS5511312A (en) * | 1978-07-10 | 1980-01-26 | Hitachi Ltd | Manufacturing method of semiconductor device |
US4410622A (en) * | 1978-12-29 | 1983-10-18 | International Business Machines Corporation | Forming interconnections for multilevel interconnection metallurgy systems |
JPS57204133A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Manufacture of semiconductor integrated circuit |
JPS5895821A (ja) * | 1981-11-30 | 1983-06-07 | Mitsubishi Electric Corp | 平行平板型プラズマcvd法 |
US4541169A (en) * | 1984-10-29 | 1985-09-17 | International Business Machines Corporation | Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip |
US5182235A (en) * | 1985-02-20 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method for a semiconductor device having a bias sputtered insulating film |
CA1247464A (en) * | 1985-05-13 | 1988-12-28 | Hiroaki Nakamura | Method for forming a planarized thin film |
US4761332A (en) * | 1985-06-24 | 1988-08-02 | International Business Machines Corporation | Planarized ceramic substrates |
US4891112A (en) * | 1985-11-12 | 1990-01-02 | Eastman Kodak Company | Sputtering method for reducing hillocking in aluminum layers formed on substrates |
US4690746A (en) * | 1986-02-24 | 1987-09-01 | Genus, Inc. | Interlayer dielectric process |
US4732658A (en) * | 1986-12-03 | 1988-03-22 | Honeywell Inc. | Planarization of silicon semiconductor devices |
US4756810A (en) * | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
JPS63234534A (ja) * | 1987-03-24 | 1988-09-29 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
US5215933A (en) * | 1990-05-11 | 1993-06-01 | Kabushiki Kaisha Toshiba | Method of manufacturing nonvolatile semiconductor memory device |
JP3048072B2 (ja) * | 1991-05-25 | 2000-06-05 | ローム株式会社 | 酸化膜の成膜方法及びその装置 |
JPH07153745A (ja) * | 1993-12-01 | 1995-06-16 | Nec Corp | 半導体装置の製造方法 |
US5928960A (en) * | 1996-10-24 | 1999-07-27 | International Business Machines Corporation | Process for reducing pattern factor effects in CMP planarization |
US6593241B1 (en) * | 1998-05-11 | 2003-07-15 | Applied Materials Inc. | Method of planarizing a semiconductor device using a high density plasma system |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3474021A (en) * | 1966-01-12 | 1969-10-21 | Ibm | Method of forming openings using sequential sputtering and chemical etching |
US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
-
1975
- 1975-10-14 US US05/621,899 patent/US4007103A/en not_active Expired - Lifetime
-
1976
- 1976-08-17 DE DE2636971A patent/DE2636971C2/de not_active Expired
- 1976-08-25 FR FR7626314A patent/FR2328285A1/fr active Granted
- 1976-09-24 IT IT27569/76A patent/IT1078800B/it active
- 1976-09-29 JP JP51116084A patent/JPS5247679A/ja active Granted
- 1976-10-08 CA CA263,201A patent/CA1067038A/en not_active Expired
- 1976-10-13 GB GB42465/76A patent/GB1497779A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2119166A (en) * | 1982-04-19 | 1983-11-09 | Mitel Corp | Integrated circuit planarizing process |
Also Published As
Publication number | Publication date |
---|---|
US4007103A (en) | 1977-02-08 |
CA1067038A (en) | 1979-11-27 |
JPS5247679A (en) | 1977-04-15 |
FR2328285B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-06-30 |
JPS5535853B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-09-17 |
DE2636971C2 (de) | 1984-05-24 |
DE2636971A1 (de) | 1977-04-28 |
IT1078800B (it) | 1985-05-08 |
FR2328285A1 (fr) | 1977-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1497779A (en) | Semiconductor integrated circuits | |
WO2000001010A3 (de) | Verfahren zur herstellung von halbleiterbauelementen | |
JPS57170534A (en) | Dry etching method for aluminum and aluminum alloy | |
GB1285525A (en) | Masking techniques for use in fabricating microelectronic components and articles produced thereby | |
GB1515184A (en) | Semiconductor device manufacture | |
JP2000509555A (ja) | 集積回路において小さな構造物を形成するための像反転技術 | |
US3798080A (en) | Method of producing a semiconductor component | |
GB1510605A (en) | Planar conductor path systems for integrated semiconductor circuits | |
GB1297203A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB8515479D0 (en) | Providing electrical connections to planar semiconductor devices | |
JPS6184824A (ja) | 半導体集積回路 | |
JPS62125633A (ja) | 半導体装置の製造方法 | |
GB1411864A (en) | Method of manufacturing an interconnection pattern | |
JPS60227469A (ja) | 半導体装置 | |
GB1232126A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB1521431A (en) | Forming conductors for electrical devices | |
JPS5660030A (en) | Manufacture of semiconductor device | |
GB1470804A (en) | Method for fabrucating semiconductor devices utilizing compo site masking | |
JPS6436024A (en) | Formation of wiring of semiconductor device | |
GB1516003A (en) | Wafers for use in the manufacture of semiconductor components | |
JPS56136976A (en) | Working method for aluminum coat | |
JPS56148846A (en) | Manufacture of circuit pattern | |
GB1518988A (en) | Integrated circuit | |
SU1814445A1 (ru) | Способ изготовления полупроводниковых структур со ступенчатым профилем островков поликристаллического кремния | |
JPS5797629A (en) | Manufacture of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |