GB1497779A - Semiconductor integrated circuits - Google Patents

Semiconductor integrated circuits

Info

Publication number
GB1497779A
GB1497779A GB42465/76A GB4246576A GB1497779A GB 1497779 A GB1497779 A GB 1497779A GB 42465/76 A GB42465/76 A GB 42465/76A GB 4246576 A GB4246576 A GB 4246576A GB 1497779 A GB1497779 A GB 1497779A
Authority
GB
United Kingdom
Prior art keywords
layer
etched
photoresist
raised
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42465/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1497779A publication Critical patent/GB1497779A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
GB42465/76A 1975-10-14 1976-10-13 Semiconductor integrated circuits Expired GB1497779A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/621,899 US4007103A (en) 1975-10-14 1975-10-14 Planarizing insulative layers by resputtering

Publications (1)

Publication Number Publication Date
GB1497779A true GB1497779A (en) 1978-01-12

Family

ID=24492123

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42465/76A Expired GB1497779A (en) 1975-10-14 1976-10-13 Semiconductor integrated circuits

Country Status (7)

Country Link
US (1) US4007103A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5247679A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1067038A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2636971C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2328285A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1497779A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1078800B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2119166A (en) * 1982-04-19 1983-11-09 Mitel Corp Integrated circuit planarizing process

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151010A (en) * 1978-06-30 1979-04-24 International Business Machines Corporation Forming adjacent impurity regions in a semiconductor by oxide masking
JPS5511312A (en) * 1978-07-10 1980-01-26 Hitachi Ltd Manufacturing method of semiconductor device
US4410622A (en) * 1978-12-29 1983-10-18 International Business Machines Corporation Forming interconnections for multilevel interconnection metallurgy systems
JPS57204133A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Manufacture of semiconductor integrated circuit
JPS5895821A (ja) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp 平行平板型プラズマcvd法
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US5182235A (en) * 1985-02-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Manufacturing method for a semiconductor device having a bias sputtered insulating film
CA1247464A (en) * 1985-05-13 1988-12-28 Hiroaki Nakamura Method for forming a planarized thin film
US4761332A (en) * 1985-06-24 1988-08-02 International Business Machines Corporation Planarized ceramic substrates
US4891112A (en) * 1985-11-12 1990-01-02 Eastman Kodak Company Sputtering method for reducing hillocking in aluminum layers formed on substrates
US4690746A (en) * 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4732658A (en) * 1986-12-03 1988-03-22 Honeywell Inc. Planarization of silicon semiconductor devices
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
JPS63234534A (ja) * 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
US5215933A (en) * 1990-05-11 1993-06-01 Kabushiki Kaisha Toshiba Method of manufacturing nonvolatile semiconductor memory device
JP3048072B2 (ja) * 1991-05-25 2000-06-05 ローム株式会社 酸化膜の成膜方法及びその装置
JPH07153745A (ja) * 1993-12-01 1995-06-16 Nec Corp 半導体装置の製造方法
US5928960A (en) * 1996-10-24 1999-07-27 International Business Machines Corporation Process for reducing pattern factor effects in CMP planarization
US6593241B1 (en) * 1998-05-11 2003-07-15 Applied Materials Inc. Method of planarizing a semiconductor device using a high density plasma system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2119166A (en) * 1982-04-19 1983-11-09 Mitel Corp Integrated circuit planarizing process

Also Published As

Publication number Publication date
US4007103A (en) 1977-02-08
CA1067038A (en) 1979-11-27
JPS5247679A (en) 1977-04-15
FR2328285B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-06-30
JPS5535853B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-09-17
DE2636971C2 (de) 1984-05-24
DE2636971A1 (de) 1977-04-28
IT1078800B (it) 1985-05-08
FR2328285A1 (fr) 1977-05-13

Similar Documents

Publication Publication Date Title
GB1497779A (en) Semiconductor integrated circuits
WO2000001010A3 (de) Verfahren zur herstellung von halbleiterbauelementen
JPS57170534A (en) Dry etching method for aluminum and aluminum alloy
GB1285525A (en) Masking techniques for use in fabricating microelectronic components and articles produced thereby
GB1515184A (en) Semiconductor device manufacture
JP2000509555A (ja) 集積回路において小さな構造物を形成するための像反転技術
US3798080A (en) Method of producing a semiconductor component
GB1510605A (en) Planar conductor path systems for integrated semiconductor circuits
GB1297203A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB8515479D0 (en) Providing electrical connections to planar semiconductor devices
JPS6184824A (ja) 半導体集積回路
JPS62125633A (ja) 半導体装置の製造方法
GB1411864A (en) Method of manufacturing an interconnection pattern
JPS60227469A (ja) 半導体装置
GB1232126A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB1521431A (en) Forming conductors for electrical devices
JPS5660030A (en) Manufacture of semiconductor device
GB1470804A (en) Method for fabrucating semiconductor devices utilizing compo site masking
JPS6436024A (en) Formation of wiring of semiconductor device
GB1516003A (en) Wafers for use in the manufacture of semiconductor components
JPS56136976A (en) Working method for aluminum coat
JPS56148846A (en) Manufacture of circuit pattern
GB1518988A (en) Integrated circuit
SU1814445A1 (ru) Способ изготовления полупроводниковых структур со ступенчатым профилем островков поликристаллического кремния
JPS5797629A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee