DE2634427B2 - Eindiffundieren von arsen in siliciumplaettchen - Google Patents
Eindiffundieren von arsen in siliciumplaettchenInfo
- Publication number
- DE2634427B2 DE2634427B2 DE19762634427 DE2634427A DE2634427B2 DE 2634427 B2 DE2634427 B2 DE 2634427B2 DE 19762634427 DE19762634427 DE 19762634427 DE 2634427 A DE2634427 A DE 2634427A DE 2634427 B2 DE2634427 B2 DE 2634427B2
- Authority
- DE
- Germany
- Prior art keywords
- arsenic
- capsule
- source
- silicon
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title claims 26
- 229910052785 arsenic Inorganic materials 0.000 title claims 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims 13
- 229910052710 silicon Inorganic materials 0.000 title claims 12
- 239000010703 silicon Substances 0.000 title claims 12
- 238000009792 diffusion process Methods 0.000 title claims 10
- 235000012431 wafers Nutrition 0.000 claims 11
- 239000002775 capsule Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000413 arsenic oxide Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000011863 silicon-based powder Substances 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50094073A JPS5217765A (en) | 1975-07-31 | 1975-07-31 | Method to diffuse arsenic in a silicone wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2634427A1 DE2634427A1 (de) | 1977-02-17 |
| DE2634427B2 true DE2634427B2 (de) | 1978-01-05 |
Family
ID=14100318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762634427 Ceased DE2634427B2 (de) | 1975-07-31 | 1976-07-30 | Eindiffundieren von arsen in siliciumplaettchen |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5217765A (enrdf_load_stackoverflow) |
| DE (1) | DE2634427B2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119109U (enrdf_load_stackoverflow) * | 1986-01-17 | 1987-07-29 |
-
1975
- 1975-07-31 JP JP50094073A patent/JPS5217765A/ja active Granted
-
1976
- 1976-07-30 DE DE19762634427 patent/DE2634427B2/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5344789B2 (enrdf_load_stackoverflow) | 1978-12-01 |
| DE2634427A1 (de) | 1977-02-17 |
| JPS5217765A (en) | 1977-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2822901C2 (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE1232931B (de) | Verfahren zum teilweisen Dotieren von Halbleiterkoerpern | |
| EP0048288B1 (de) | Verfahren zur Dotierung von Halbleiterbauelementen mittels Ionenimplantation | |
| DE2122192C3 (de) | Verfahren zur Vorbehandlung von beim Züchten von halbleitenden Kristallen als Einschließungsmittel verwendetem Boroxid | |
| DE1913718C2 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
| DE2341311C3 (de) | Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern | |
| DE1151035B (de) | Verfahren zum Impraegnieren einer Sauerstoffelektrode aus poroesem Nickel mit einer gesaettigten Lithiumsalzloesung | |
| DE1521950B2 (de) | Verfahren zur herstellung eines oxydbelages auf einem vor zugsweise einkristallinen halbleiterkoerper und anwendung des verfahrens zum vergleichmaessigen der oberflaeche und zum dotieren | |
| DE1930423C3 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
| DE2634427B2 (de) | Eindiffundieren von arsen in siliciumplaettchen | |
| DE1931417B2 (de) | Verfahren zur doppeldiffusion von halbleitermaterial | |
| DE1444521B2 (de) | Verfahren zur herstellung einer halbleiteranordnung | |
| DE1619977C3 (de) | Zweifach dotiertes Galliumarsenid | |
| DE531182C (de) | Verfahren zur Herstellung eines Traegers, der mit einem lichtempfindlichen Stoff versehen ist | |
| DE1913565B2 (de) | Verfahren zur Herstellung eines Kristalls einer halbleitenden A"1 Bv -Verbindung | |
| DE1544264C3 (de) | Verfahren zum Herstellen von Halbleiterschichten durch Abscheiden aus der Gasphase | |
| DE2316520A1 (de) | Verfahren zum dotieren von halbleiterplaettchen durch diffusion aus einer auf das halbleitermaterial aufgebrachten schicht | |
| DE1105066B (de) | Halbleiteranordnung mit einem wenigstens teilweise hochohmigen Kadmiumtelluridkoerper und Verfahren zu deren Herstellung | |
| DE1248023B (de) | Verfahren zum Eindiffundieren von Gallium in einen Koerper aus Halbleitermaterial | |
| DE2127658A1 (de) | Verfahren zum Aktivieren einer Halbleiterelektronenquelle | |
| DE2121975A1 (de) | Verfahren zur Ehminierung von Ein flüssen von Verunreinigungen in Kohlen stoffkorpern | |
| DE1913616C3 (de) | Verfahren zum Ätzen einer an einem Halter angebrachten Halbleiterscheibe | |
| DE1289035C2 (de) | Verfahren zum Eindiffundieren eines die Leitfaehigkeit beeinflussenden Stoerstoffs in einen Verbindungshalbleiterkoerper | |
| DE2257047A1 (de) | Diffusionsverfahren zum dotieren von galliumarsenid | |
| DE1288688B (de) | Diffusionsverfahren zum Dotieren einer Oberflaechenschicht von festen Halbleiterkoerpern fuer Halbleiterbauelemente |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHV | Refusal |