DE2629785C2 - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- DE2629785C2 DE2629785C2 DE2629785A DE2629785A DE2629785C2 DE 2629785 C2 DE2629785 C2 DE 2629785C2 DE 2629785 A DE2629785 A DE 2629785A DE 2629785 A DE2629785 A DE 2629785A DE 2629785 C2 DE2629785 C2 DE 2629785C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- layers
- semiconductor
- conductivity type
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 description 9
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910005540 GaP Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7521402A FR2317774A1 (fr) | 1975-07-08 | 1975-07-08 | Ensemble monolithique semiconducteur polychrome |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2629785A1 DE2629785A1 (de) | 1977-01-27 |
| DE2629785C2 true DE2629785C2 (de) | 1984-02-16 |
Family
ID=9157662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2629785A Expired DE2629785C2 (de) | 1975-07-08 | 1976-07-02 | Halbleiterbauelement |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5210090A (Direct) |
| CA (1) | CA1075353A (Direct) |
| DE (1) | DE2629785C2 (Direct) |
| FR (1) | FR2317774A1 (Direct) |
| GB (1) | GB1551942A (Direct) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53131271A (en) * | 1977-04-05 | 1978-11-15 | Matsushita Electric Ind Co Ltd | Removing method for carbon monoxide |
| US4148045A (en) * | 1977-09-21 | 1979-04-03 | International Business Machines Corporation | Multicolor light emitting diode array |
| US4167016A (en) * | 1977-09-21 | 1979-09-04 | International Business Machines Corporation | Optically isolated monolithic light emitting diode array |
| JPS54123884A (en) * | 1978-03-17 | 1979-09-26 | Hitachi Ltd | Light emission diode of multi-color and its manufacture |
| JPS55124180A (en) * | 1979-03-16 | 1980-09-25 | Sanyo Electric Co | Led display unit and production thereof |
| US4577207A (en) * | 1982-12-30 | 1986-03-18 | At&T Bell Laboratories | Dual wavelength optical source |
| CN108105647B (zh) * | 2017-12-20 | 2022-11-04 | 西安智盛锐芯半导体科技有限公司 | 智能led射灯 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611069A (en) * | 1969-11-12 | 1971-10-05 | Gen Electric | Multiple color light emitting diodes |
| US3890170A (en) * | 1972-02-29 | 1975-06-17 | Motorola Inc | Method of making a multicolor light display by graded mesaing |
| JPS4945040A (Direct) * | 1972-09-08 | 1974-04-27 | ||
| JPS5057592A (Direct) * | 1973-09-20 | 1975-05-20 | ||
| US3873979A (en) * | 1973-09-28 | 1975-03-25 | Monsanto Co | Luminescent solid state status indicator |
-
1975
- 1975-07-08 FR FR7521402A patent/FR2317774A1/fr active Granted
-
1976
- 1976-07-02 DE DE2629785A patent/DE2629785C2/de not_active Expired
- 1976-07-05 GB GB27815/76A patent/GB1551942A/en not_active Expired
- 1976-07-07 CA CA256,461A patent/CA1075353A/en not_active Expired
- 1976-07-08 JP JP8044476A patent/JPS5210090A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1551942A (en) | 1979-09-05 |
| FR2317774A1 (fr) | 1977-02-04 |
| DE2629785A1 (de) | 1977-01-27 |
| FR2317774B1 (Direct) | 1977-12-16 |
| JPS5210090A (en) | 1977-01-26 |
| CA1075353A (en) | 1980-04-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8125 | Change of the main classification |
Ipc: H01L 27/15 |
|
| 8181 | Inventor (new situation) |
Free format text: DIGUET, DANIEL GAFFRE, MICHEL, CAEN, FR |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |