DE2609219A1 - Integrierte halbleiterschaltungen - Google Patents
Integrierte halbleiterschaltungenInfo
- Publication number
- DE2609219A1 DE2609219A1 DE19762609219 DE2609219A DE2609219A1 DE 2609219 A1 DE2609219 A1 DE 2609219A1 DE 19762609219 DE19762609219 DE 19762609219 DE 2609219 A DE2609219 A DE 2609219A DE 2609219 A1 DE2609219 A1 DE 2609219A1
- Authority
- DE
- Germany
- Prior art keywords
- zones
- zone
- base
- collector
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 239000012535 impurity Substances 0.000 title claims abstract 5
- 238000009413 insulation Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 241000251730 Chondrichthyes Species 0.000 claims 1
- 239000003353 gold alloy Substances 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50027145A JPS51102577A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-03-07 | 1975-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2609219A1 true DE2609219A1 (de) | 1976-09-16 |
Family
ID=12212876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762609219 Pending DE2609219A1 (de) | 1975-03-07 | 1976-03-05 | Integrierte halbleiterschaltungen |
Country Status (3)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2835930A1 (de) * | 1978-08-17 | 1980-02-28 | Siemens Ag | Monolithisch integrierte halbleiterschaltung |
| DE3638923A1 (de) * | 1986-11-14 | 1988-05-26 | Telefunken Electronic Gmbh | Integrierte schaltungsanordnung |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59766Y2 (ja) * | 1977-02-14 | 1984-01-10 | 東光株式会社 | 半導体装置 |
| JPS55158669A (en) * | 1979-05-29 | 1980-12-10 | Sanyo Electric Co Ltd | Lateral type transistor |
| JPS60153204A (ja) * | 1984-01-22 | 1985-08-12 | Rohm Co Ltd | 増幅回路 |
| JPS60146353U (ja) * | 1984-03-08 | 1985-09-28 | 三洋電機株式会社 | ラテラル型トランジスタ |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629386B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-04-07 | 1981-07-08 | ||
| US4153909A (en) * | 1973-12-10 | 1979-05-08 | National Semiconductor Corporation | Gated collector lateral transistor structure and circuits using same |
-
1975
- 1975-03-07 JP JP50027145A patent/JPS51102577A/ja active Pending
-
1976
- 1976-03-05 DE DE19762609219 patent/DE2609219A1/de active Pending
- 1976-03-05 NL NL7602373A patent/NL7602373A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2835930A1 (de) * | 1978-08-17 | 1980-02-28 | Siemens Ag | Monolithisch integrierte halbleiterschaltung |
| DE3638923A1 (de) * | 1986-11-14 | 1988-05-26 | Telefunken Electronic Gmbh | Integrierte schaltungsanordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7602373A (nl) | 1976-09-09 |
| JPS51102577A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-09-10 |
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