DE2543138B2 - Decoder, bestehend aus einem monolithischen, maskenprogrammierbaren Halbleiter-Festwertspeicher - Google Patents
Decoder, bestehend aus einem monolithischen, maskenprogrammierbaren Halbleiter-FestwertspeicherInfo
- Publication number
- DE2543138B2 DE2543138B2 DE2543138A DE2543138A DE2543138B2 DE 2543138 B2 DE2543138 B2 DE 2543138B2 DE 2543138 A DE2543138 A DE 2543138A DE 2543138 A DE2543138 A DE 2543138A DE 2543138 B2 DE2543138 B2 DE 2543138B2
- Authority
- DE
- Germany
- Prior art keywords
- source
- substrate
- regions
- memory
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/36—Gate programmed, e.g. different gate material or no gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/387—Source region or drain region doping programmed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49110032A JPS605062B2 (ja) | 1974-09-26 | 1974-09-26 | 半導体論理回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2543138A1 DE2543138A1 (de) | 1976-04-29 |
| DE2543138B2 true DE2543138B2 (de) | 1978-05-11 |
| DE2543138C3 DE2543138C3 (cg-RX-API-DMAC10.html) | 1979-01-25 |
Family
ID=14525370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2543138A Granted DE2543138B2 (de) | 1974-09-26 | 1975-09-26 | Decoder, bestehend aus einem monolithischen, maskenprogrammierbaren Halbleiter-Festwertspeicher |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS605062B2 (cg-RX-API-DMAC10.html) |
| DE (1) | DE2543138B2 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2286471A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1499389A (cg-RX-API-DMAC10.html) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4061506A (en) * | 1975-05-01 | 1977-12-06 | Texas Instruments Incorporated | Correcting doping defects |
| JPS54121685A (en) * | 1978-03-14 | 1979-09-20 | Kyushu Nippon Electric | Ic and method of fabricating same |
| JPH0626246B2 (ja) * | 1983-06-17 | 1994-04-06 | 株式会社日立製作所 | 半導体メモリの製造方法 |
| JPS5910261A (ja) * | 1983-06-24 | 1984-01-19 | Toshiba Corp | 半導体論理回路装置 |
| JPS6149975U (cg-RX-API-DMAC10.html) * | 1984-09-05 | 1986-04-03 | ||
| FR2826169A1 (fr) | 2001-06-15 | 2002-12-20 | St Microelectronics Sa | Memoire mos a lecture seulement |
| DE102019128071B3 (de) * | 2019-10-17 | 2021-02-04 | Infineon Technologies Ag | Transistorbauelement |
-
1974
- 1974-09-26 JP JP49110032A patent/JPS605062B2/ja not_active Expired
-
1975
- 1975-09-25 GB GB39393/75A patent/GB1499389A/en not_active Expired
- 1975-09-26 FR FR7529644A patent/FR2286471A1/fr active Granted
- 1975-09-26 DE DE2543138A patent/DE2543138B2/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS605062B2 (ja) | 1985-02-08 |
| FR2286471B1 (cg-RX-API-DMAC10.html) | 1981-10-30 |
| GB1499389A (en) | 1978-02-01 |
| FR2286471A1 (fr) | 1976-04-23 |
| JPS5137578A (cg-RX-API-DMAC10.html) | 1976-03-29 |
| DE2543138A1 (de) | 1976-04-29 |
| DE2543138C3 (cg-RX-API-DMAC10.html) | 1979-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |