DE2527657C3 - Optoelektronischer Sensor und Verfahren zu seinem Betrieb - Google Patents

Optoelektronischer Sensor und Verfahren zu seinem Betrieb

Info

Publication number
DE2527657C3
DE2527657C3 DE2527657A DE2527657A DE2527657C3 DE 2527657 C3 DE2527657 C3 DE 2527657C3 DE 2527657 A DE2527657 A DE 2527657A DE 2527657 A DE2527657 A DE 2527657A DE 2527657 C3 DE2527657 C3 DE 2527657C3
Authority
DE
Germany
Prior art keywords
electrodes
thin layer
layer
during
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2527657A
Other languages
German (de)
English (en)
Other versions
DE2527657B2 (de
DE2527657A1 (de
Inventor
Karl Dipl.-Ing. 8035 Gauting Knauer
Hans-Joerg Dr.-Ing. 8011 Zorneding Pfleiderer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2527657A priority Critical patent/DE2527657C3/de
Priority to GB21555/76A priority patent/GB1520965A/en
Priority to US05/694,836 priority patent/US4131810A/en
Priority to IT24293/76A priority patent/IT1067007B/it
Priority to FR7618427A priority patent/FR2316743A1/fr
Priority to NL7606665A priority patent/NL7606665A/xx
Priority to BE168081A priority patent/BE843134A/xx
Publication of DE2527657A1 publication Critical patent/DE2527657A1/de
Publication of DE2527657B2 publication Critical patent/DE2527657B2/de
Application granted granted Critical
Publication of DE2527657C3 publication Critical patent/DE2527657C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE2527657A 1975-06-20 1975-06-20 Optoelektronischer Sensor und Verfahren zu seinem Betrieb Expired DE2527657C3 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE2527657A DE2527657C3 (de) 1975-06-20 1975-06-20 Optoelektronischer Sensor und Verfahren zu seinem Betrieb
GB21555/76A GB1520965A (en) 1975-06-20 1976-05-25 Opto-electronic sensors
US05/694,836 US4131810A (en) 1975-06-20 1976-06-10 Opto-electronic sensor
IT24293/76A IT1067007B (it) 1975-06-20 1976-06-15 Sensore optoelettronico
FR7618427A FR2316743A1 (fr) 1975-06-20 1976-06-17 Detecteur opto-electronique
NL7606665A NL7606665A (nl) 1975-06-20 1976-06-18 Opto-elektronische sensor.
BE168081A BE843134A (fr) 1975-06-20 1976-06-18 Detecteur opto-electronique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2527657A DE2527657C3 (de) 1975-06-20 1975-06-20 Optoelektronischer Sensor und Verfahren zu seinem Betrieb

Publications (3)

Publication Number Publication Date
DE2527657A1 DE2527657A1 (de) 1976-12-23
DE2527657B2 DE2527657B2 (de) 1978-12-21
DE2527657C3 true DE2527657C3 (de) 1979-08-23

Family

ID=5949589

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2527657A Expired DE2527657C3 (de) 1975-06-20 1975-06-20 Optoelektronischer Sensor und Verfahren zu seinem Betrieb

Country Status (7)

Country Link
US (1) US4131810A (enExample)
BE (1) BE843134A (enExample)
DE (1) DE2527657C3 (enExample)
FR (1) FR2316743A1 (enExample)
GB (1) GB1520965A (enExample)
IT (1) IT1067007B (enExample)
NL (1) NL7606665A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450464A (en) * 1980-07-23 1984-05-22 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus having a charge transfer arrangement
JPS5919480A (ja) * 1982-07-26 1984-01-31 Olympus Optical Co Ltd 固体撮像装置
JPH0681280B2 (ja) * 1984-06-06 1994-10-12 日本電気株式会社 電荷結合素子の駆動法
US4716447A (en) * 1985-09-20 1987-12-29 Rca Corporation Interrupting charge integration in semiconductor imagers exposed to radiant energy
US5270558A (en) * 1991-12-03 1993-12-14 Massachusetts Institute Of Technology Integrated electronic shutter for charge-coupled devices
CA2101154A1 (en) * 1991-12-03 1993-06-10 Robert K. Reich Integrated electronic shutter for charge-coupled devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576392A (en) * 1968-06-26 1971-04-27 Rca Corp Semiconductor vidicon target having electronically alterable light response characteristics
US3796927A (en) * 1970-12-16 1974-03-12 Bell Telephone Labor Inc Three dimensional charge coupled devices
US3686644A (en) * 1971-04-29 1972-08-22 Alton O Christensen Gated diode memory
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3906543A (en) * 1971-12-23 1975-09-16 Bell Telephone Labor Inc Solid state imaging apparatus employing charge transfer devices
US3771149A (en) * 1971-12-30 1973-11-06 Texas Instruments Inc Charge coupled optical scanner
US3792197A (en) * 1972-07-31 1974-02-12 Bell Telephone Labor Inc Solid-state diode array camera tube having electronic control of light sensitivity
US3863065A (en) * 1972-10-02 1975-01-28 Rca Corp Dynamic control of blooming in charge coupled, image-sensing arrays
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
US3996600A (en) * 1975-07-10 1976-12-07 International Business Machines Corporation Charge coupled optical scanner with blooming control

Also Published As

Publication number Publication date
BE843134A (fr) 1976-10-18
FR2316743B1 (enExample) 1979-10-12
GB1520965A (en) 1978-08-09
DE2527657B2 (de) 1978-12-21
IT1067007B (it) 1985-03-12
NL7606665A (nl) 1976-12-22
US4131810A (en) 1978-12-26
FR2316743A1 (fr) 1977-01-28
DE2527657A1 (de) 1976-12-23

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee