DE2520774A1 - Verfahren zur herstellung von hochreinem elementarem silicium - Google Patents
Verfahren zur herstellung von hochreinem elementarem siliciumInfo
- Publication number
- DE2520774A1 DE2520774A1 DE19752520774 DE2520774A DE2520774A1 DE 2520774 A1 DE2520774 A1 DE 2520774A1 DE 19752520774 DE19752520774 DE 19752520774 DE 2520774 A DE2520774 A DE 2520774A DE 2520774 A1 DE2520774 A1 DE 2520774A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- hydrogen
- reaction
- reactor
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 44
- 239000010703 silicon Substances 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 239000001257 hydrogen Substances 0.000 claims description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- -1 silicon halide Chemical class 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 8
- 239000005049 silicon tetrachloride Substances 0.000 claims description 8
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 7
- 239000005052 trichlorosilane Substances 0.000 claims description 7
- 239000011856 silicon-based particle Substances 0.000 claims description 5
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims 4
- 150000003377 silicon compounds Chemical class 0.000 claims 4
- 239000007789 gas Substances 0.000 description 22
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 6
- 239000005046 Chlorosilane Substances 0.000 description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000000155 melt Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46917974A | 1974-05-13 | 1974-05-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2520774A1 true DE2520774A1 (de) | 1975-11-27 |
Family
ID=23862763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752520774 Withdrawn DE2520774A1 (de) | 1974-05-13 | 1975-05-09 | Verfahren zur herstellung von hochreinem elementarem silicium |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS50155423A (enrdf_load_stackoverflow) |
| DE (1) | DE2520774A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2271173B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1498266A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3638931A1 (de) * | 1985-12-28 | 1987-07-02 | Korea Res Inst Chem Tech | Verfahren und vorrichtung zur herstellung von hochreinem polykristallinem silizium |
| DE10060469A1 (de) * | 2000-12-06 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2620739A1 (de) * | 1976-05-11 | 1977-12-01 | Wacker Chemitronic | Verfahren zur herstellung von hochreinem silicium |
| GB2028289B (en) * | 1978-08-18 | 1982-09-02 | Schumacher Co J C | Producing silicon |
| JPH01282194A (ja) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | 単結晶製造方法 |
| JPH0742080Y2 (ja) * | 1990-07-12 | 1995-09-27 | 川崎重工業株式会社 | 高温ガスを用いる流動層炉 |
| NO329968B1 (no) | 2007-08-17 | 2011-01-31 | Silansil As | Anordning og fremgangsmate for kompaktering av silisiumpulver |
-
1975
- 1975-05-01 GB GB1816875A patent/GB1498266A/en not_active Expired
- 1975-05-09 DE DE19752520774 patent/DE2520774A1/de not_active Withdrawn
- 1975-05-12 JP JP5590275A patent/JPS50155423A/ja active Pending
- 1975-05-13 FR FR7514887A patent/FR2271173B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3638931A1 (de) * | 1985-12-28 | 1987-07-02 | Korea Res Inst Chem Tech | Verfahren und vorrichtung zur herstellung von hochreinem polykristallinem silizium |
| DE10060469A1 (de) * | 2000-12-06 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1498266A (en) | 1978-01-18 |
| JPS50155423A (enrdf_load_stackoverflow) | 1975-12-15 |
| FR2271173B1 (enrdf_load_stackoverflow) | 1979-04-06 |
| FR2271173A1 (enrdf_load_stackoverflow) | 1975-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |