DE2520712A1 - Sensorkreis - Google Patents
SensorkreisInfo
- Publication number
- DE2520712A1 DE2520712A1 DE19752520712 DE2520712A DE2520712A1 DE 2520712 A1 DE2520712 A1 DE 2520712A1 DE 19752520712 DE19752520712 DE 19752520712 DE 2520712 A DE2520712 A DE 2520712A DE 2520712 A1 DE2520712 A1 DE 2520712A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- semiconductor
- emitter
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000009792 diffusion process Methods 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 13
- 239000000969 carrier Substances 0.000 description 12
- 230000003321 amplification Effects 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Measuring Magnetic Variables (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Hall/Mr Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5210874A JPS5646267B2 (US20030157376A1-20030821-M00001.png) | 1974-05-10 | 1974-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2520712A1 true DE2520712A1 (de) | 1975-11-27 |
Family
ID=12905653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752520712 Pending DE2520712A1 (de) | 1974-05-10 | 1975-05-09 | Sensorkreis |
Country Status (9)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2860654D1 (en) * | 1977-09-08 | 1981-08-06 | Gen Electric Co Ltd | Planar pnpn semiconductor device of circular geometry and magnetic field sensor using such a device |
| US4757025A (en) * | 1985-03-25 | 1988-07-12 | Motorola Inc. | Method of making gate turn off switch with anode short and buried base |
| US4896196A (en) * | 1986-11-12 | 1990-01-23 | Siliconix Incorporated | Vertical DMOS power transistor with an integral operating condition sensor |
| DE3832709A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Thyristor |
| US5493248A (en) * | 1990-09-04 | 1996-02-20 | Motorola, Inc. | Integrated circuit for sensing an environmental condition and producing a high power circuit |
| US5189367A (en) * | 1991-11-21 | 1993-02-23 | Nec Research Institute, Inc. | Magnetoresistor using a superlattice of GaAs and AlGaAs |
| WO2004097442A2 (en) * | 2003-04-28 | 2004-11-11 | Knowles Electronics, Llc | System and method for sensing a magnetic field |
| JP2007516607A (ja) * | 2003-05-29 | 2007-06-21 | アプライド マテリアルズ インコーポレイテッド | 埋込式導波路検出器 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL242787A (US20030157376A1-20030821-M00001.png) * | 1958-09-05 | |||
| SE320729B (US20030157376A1-20030821-M00001.png) * | 1968-06-05 | 1970-02-16 | Asea Ab |
-
1974
- 1974-05-10 JP JP5210874A patent/JPS5646267B2/ja not_active Expired
-
1975
- 1975-04-25 US US05/571,687 patent/US4032953A/en not_active Expired - Lifetime
- 1975-04-30 CA CA225,933A patent/CA1052457A/en not_active Expired
- 1975-05-02 GB GB18511/75A patent/GB1510320A/en not_active Expired
- 1975-05-06 AT AT0346575A patent/AT373728B/de not_active IP Right Cessation
- 1975-05-07 NL NL7505423A patent/NL7505423A/xx not_active Application Discontinuation
- 1975-05-09 DE DE19752520712 patent/DE2520712A1/de active Pending
- 1975-05-09 ES ES437553A patent/ES437553A1/es not_active Expired
- 1975-05-12 FR FR7514734A patent/FR2270682B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2270682B1 (US20030157376A1-20030821-M00001.png) | 1982-03-05 |
| NL7505423A (nl) | 1975-11-12 |
| CA1052457A (en) | 1979-04-10 |
| AT373728B (de) | 1984-02-10 |
| ATA346575A (de) | 1983-06-15 |
| JPS50145084A (US20030157376A1-20030821-M00001.png) | 1975-11-21 |
| JPS5646267B2 (US20030157376A1-20030821-M00001.png) | 1981-10-31 |
| AU8065475A (en) | 1976-11-04 |
| US4032953A (en) | 1977-06-28 |
| GB1510320A (en) | 1978-05-10 |
| FR2270682A1 (US20030157376A1-20030821-M00001.png) | 1975-12-05 |
| ES437553A1 (es) | 1977-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |